Vishay VS-HFA16TA60CSPbF Data Sheet

VS-HFA16TA60CSPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 8 A

D2PAK

PRODUCT SUMMARY

V

R

V

at 8 A at 25 °C 1.7 V

F

I

F(AV)

t

(typical) 18 ns

rr

(maximum) 150 °C

T

J

Q

rr

dI

/dt 240 A/μs

(rec)M

Base

common

cathode

2

2

1

Common

Anode Anode

cathode

2 x 8 A

3

600 V

65 nC

HEXFRED

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA16TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16TA60CS is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
peak recovery current (I
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.

®

RRM

rr

®

product line features extremely low values of

) and does not exhibit any

RRM

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94059 For technical questions, contact: [e-mail]
Revision: 22-Feb-10 1

per leg

per device 16

J

I

F

FSM

FRM

, T

R

TC = 100 °C

D

TC = 25 °C 36

T

= 100 °C 14

C

Stg

600 V

8

60

24

W

- 55 to + 150 °C

www.vishay.com

A

VS-HFA16TA60CSPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 8 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

t

rr1

rr2

Reverse recovery time
See fig. 5, 6 and 16

Peak recovery current
See fig. 7 and 8

Reverse recovery charge
See fig. 9 and 10

Peak rate of fall of recovery
current during t

b

See fig. 11 & 12

IR = 100 μA 600 - -

IF = 8.0 A

I

= 16 A - 1.7 2.1

F

I

= 8.0 A, TJ = 125 °C - 1.4 1.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 100 500

J

VR = 200 V See fig. 3 - 10 25 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

rr

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 -

See fig. 1

See fig. 2

TJ = 25 °C

-1.41.7

-0.35.0

-3755

TJ = 125 °C - 55 90

TJ = 25 °C - 3.5 5.0

TJ = 125 °C - 4.5 8.0

rr1

rr2

TJ = 25 °C - 65 138

TJ = 125 °C - 124 360

I

= 8.0 A

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

/dt1 TJ = 25 °C - 240 -

/dt2 TJ = 125 °C - 210 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Junction to case,
single leg conducting

Junction to case,

both legs conducting

Thermal resistance,
junction to ambient

Weight

Mounting torque

Marking device Case style D

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2 Revision: 22-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

lead

--3.5

R

thJC

- - 1.75

R

Typical socket mount - - 80

thJA

-2-g

-0.07- oz.

6.0

(5.0)

2

PAK HFA16TA60CS

-

12

(10)

Document Number: 94059

K/W

kgf · cm

(lbf ⋅ in)

VS-HFA16TA60CSPbF

100

10

0.1

- Instantaneous Forward Current (A)

F

I

94059_01

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 8 A

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

100

®

1000

100

10

0.1

- Reverse Current (μA)

R

0.01

I

0.001

94059_02

Vishay High Power Products

TJ = 150 °C

TJ = 125 °C

1

TJ = 25 °C

0 100 200 300 500400 600

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

TJ = 25 °C

10

- Junction Capacitance (pF)

T

C

1

1 10 100 1000

94059_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

10

1

P

D = 0.50
D = 0.20

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

94059_04

Single pulse

(thermal response)

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.10
D = 0.05
D = 0.02
D = 0.01

Characteristics (Per Leg)

thJC

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

DM

t

1

t

2

1/t2

+ T

thJC

C

Document Number: 94059 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Feb-10 3