Vishay VS-HFA16TA60CPbF Data Sheet
VS-HFA16TA60CPbF
TO-220AB
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 8 A
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 18 ns
rr
T
max. 150 °C
J
Diode variation Common cathode
2 x 8 A
600 V
1.7 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16TA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16TA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16TA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
®
and Q
RRM
®
rr
product line features extremely low values of
) and does not exhibit any
RRM
portion of recovery. The
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94058 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 16
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 36
T
= 100 °C 14
C
Stg
600 V
8
60
24
W
- 55 to + 150 °C
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A
VS-HFA16TA60CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 8 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall recovery
current during t
b
See fig. 8
IR = 100 μA 600 - -
IF = 8 A
I
= 16 A - 1.7 2.1
F
I
= 8 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 100 500
J
VR = 200 V See fig. 3 - 10 25 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 -
TJ = 25 °C
TJ = 125 °C - 55 90
TJ = 25 °C - 3.5 5.0
TJ = 125 °C - 4.5 8.0
rr1
rr2
TJ = 25 °C - 65 138
TJ = 125 °C - 124 360
/dt1 TJ = 25 °C - 240 -
/dt2 TJ = 125 °C - 210 -
®
I
= 8.0 A
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
See fig. 1
See fig. 2
-1.41.7
-0.35.0
-8.0-nH
-3755
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Junction to case,
single leg conducting
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-220AB HFA16TA60C
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
lead
--3.5
R
thJC
- - 1.75
R
Typical socket mount - - 80
thJA
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11
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K/W
kgf · cm
(lbf · in)
100
0
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
100 300
200
0.01
0.001
94058_02
0.1
1
10
100
400
500
A
1000
600
TJ = 25 °C
T
J
= 125 °C
T
J
= 150 °C
10
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 8 A
VS-HFA16TA60CPbF
Vishay Semiconductors
10
1
- Instantaneous Forward Current (A)
0.1
F
I
94058_01
0.4
1.2 1.6 2.0 2.4 2.8 3.2
0.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
- Junction Capacitance (pF)
T
C
94058_03
TJ = 150 °C
T
= 125 °C
J
= 25 °C
T
J
A
100
10
1
1
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
TJ = 25 °C
10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
1
P
1/t2
thJC
DM
+ T
t
1
t
2
C
1
- Thermal Response
thJC
Z
0.01
D = 0.50
0.1
Single pulse
(thermal response)
0.00001 0.0001 0.001 0.01 0.1
Fig. 4 - Maximum Thermal Impedance Z
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Characteristics (Per Leg)
thJC
Document Number: 94058 For technical questions within your region, please contact one of the following: www.vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
www.vishay.com/doc?91000
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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