Vishay VS-HFA16PA60CPbF Data Sheet
VS-HFA16PA60CPbF
TO-2 47AC
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 8 A
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 18 ns
rr
T
max. 150 °C
J
Diode variation Single die
2 x 8 A
600 V
1.7 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16PA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16PA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16PA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
®
and Q
RRM
®
rr
product line features extremely low values of
) and does not exhibit any
RRM
portion of recovery. The
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94056 For technical questions within your region, please contact one of the following: www.vishay.com
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 16
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 36
T
= 100 °C 14
C
Stg
600 V
8
60
24
W
- 55 to + 150 °C
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A
VS-HFA16PA60CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 8 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall recovery
current during t
b
See fig. 11 and 12
IR = 100 μA 600 - -
IF = 8.0 A
I
= 16 A - 1.7 2.1
F
I
= 8.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 100 500
J
VR = 200 V See fig. 3 - 10 25 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 -
TJ = 25 °C
TJ = 125 °C - 55 90
TJ = 25 °C - 3.5 5.0
TJ = 125 °C - 4.5 8.0
rr1
rr2
TJ = 25 °C - 65 138
TJ = 125 °C - 124 360
/dt1 TJ = 25 °C - 240 -
/dt2 TJ = 125 °C - 210 -
®
I
= 8.0 A
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
See fig. 1
See fig. 2
-1.41.7
-0.35.0
-8.0-nH
-3755
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-247AC (JEDEC) HFA16PA60C
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
lead
--3.5
R
thJC
- - 1.75
R
Typical socket mount - - 40
thJA
R
thCS
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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K/W
kgf · cm
(lbf · in)
HEXFRED
94056_01
VFM - Forward Voltage Drop (V)
0.4
0.1
10
100
1.2
1.6 2.0 2.82.4
I
F
- Instantaneous Forward Current (A)
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
3.2
0.8
1000
100
10 100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
94056_03
TJ = 25 °C
1
1
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
1
t
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
0.01
94056_04
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
2
t
1
t
P
DM
®
Ultrafast Soft Recovery Diode, 2 x 8 A
VS-HFA16PA60CPbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0
94056_02
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
200
100
300
VR - Reverse Voltage (V)
400
500
600
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Document Number: 94056 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
This document is subject to change without notice.
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Characteristics (Per Leg)
thJC
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