Vishay VS-HFA16PA120CPbF Data Sheet
VS-HFA16PA120CPbF
TO-2 47AC
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 8 A
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 28 ns
rr
T
max. 150 °C
J
Diode variation Single die
2 x 8 A
1200 V
3.3 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16PA120CPbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A per leg continuous
current, the VS-HFA16PA120CPbF is especially well suited
for use as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
line features extremely low values of peak recovery current
(I
RRM
during the t
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16PA120CPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
and Q
RRM
) and does not exhibit any tendency to “snap-off”
portion of recovery. The HEXFRED features
b
rr
®
product
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94055 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 16
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 73.5
T
= 100 °C 29
C
Stg
1200 V
8
130
32
W
- 55 to + 150 °C
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A
VS-HFA16PA120CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 8 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of recovery current
during t
b
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr1
rr2
IR = 100 μA 1200 - -
IF = 8.0 A - 2.6 3.3
I
= 16 A - 3.4 4.3
F
I
= 8.0 A, TJ = 125 °C - 2.4 3.1
F
VR = VR rated - 0.31 10
T
= 125 °C, VR = 0.8 x VR rated - 135 1000
J
VR = 200 V - 11 20 pF
T
Measured lead to lead 5 mm from package - 8.0 - nH
S
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 -
TJ = 25 °C
TJ = 125 °C - 106 160
TJ = 25 °C - 4.5 8.0
TJ = 125 °C - 6.2 11
rr1
rr2
TJ = 25 °C - 140 380
TJ = 125 °C - 335 880
/dt1 TJ = 25 °C - 133 -
/dt2 TJ = 125 °C - 85 -
®
I
= 8.0 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
-6395
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC (JEDEC) HFA16PA120C
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
Typical socket mount - - 40
K/W
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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HEXFRED
1
10
104
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
02 68
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
100
1 100
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10 1000 10 000
10
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
0.01
Single pulse
(thermal resistance)
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
®
Ultrafast Soft Recovery Diode, 2 x 8 A
1000
100
VS-HFA16PA120CPbF
Vishay Semiconductors
TJ = 150 °C
TJ = 125 °C
10
1
- Reverse Current (µA)
0.1
R
I
0.01
0
TJ = 100 °C
TJ = 25 °C
300 600 900
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1200
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94055 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics
thJC
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