Vishay VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF Data Sheet

www.vishay.com

D2PAK

Base

cathode

Anode

1

3

2

N/C

TO-262

N/C

Anode

1

3

2

VS-HFA15 TB60SPbF VS-HFA15 TB60-1PbF

Ultrafast Soft Recovery Diode, 15 A

VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF

Vishay Semiconductors

HEXFRED®,

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC61249-2-21
definition

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

RRM

and Q

rr

PRODUCT SUMMARY

Package TO-263AB (D2PAK), TO-262AA

I

F(AV)

V

R

V

at I

F

F

t

(typ.) 23 ns

rr

max. 150 °C

T

J

Diode variation Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

15 A

600 V

1.7 V

J

F

FSM

FRM

, T

DESCRIPTION

VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of
the art ultrafast recovery diode. Employing the latest in
epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and
15 A continuous current, the VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.

R

TC = 100 °C 15

D

TC = 25 °C 74

T

= 100 °C 29

C

Stg

600 V

150

60

- 55 to + 150 °C

®

product line features

) and

RRM

ASingle pulse forward current I

W

b

Revision: 10-Jun-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

1

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 94054

VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

V

BR

IR = 100 μA 600 - -

IF = 15 A

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

FM

I

RM

T

S

= 30 A - 1.5 2.0

I

F

I

= 15 A, TJ = 125 °C - 1.2 1.6

F

VR = VR rated

= 125 °C, VR = 0.8 x VR rated

T

J

See fig. 1

See fig. 2

VR = 200 V See fig. 3 - 25 50 pF

Measured lead to lead 5 mm from package body - 8.0 - nH

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

t

rr

rr1

rr2

rr1

rr2

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 23 -

TJ = 25 °C

TJ = 125 °C - 105 120

TJ = 25 °C - 4.5 6.0

TJ = 125 °C - 6.5 10

TJ = 25 °C - 84 180

TJ = 125 °C - 241 600

I

= 15 A

F

dI

/dt = 200 A/μs

F

= 200 V

V

R

/dt1 TJ = 25 °C - 188 -

/dt2 TJ = 125 °C - 160 -

Vishay Semiconductors

-1.31.7

-1.010

- 400 1000

-5060

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

lead

R

thJC

R

thJA

R

thCS

Weight

Marking device

Revision: 10-Jun-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0.063" from case (1.6 mm) for 10 s - - 300 °C

--1.7

Typical socket mount - - 80

Mounting surface, flat, smooth and greased - 0.5 -

-2.0- g

-0.07- oz.

2

Case style D

PAK HFA15TB60S

Case style TO-262 HFA15TB60-1

2

Document Number: 94054

, [e-mail], [e-mail]

K/W

100

0.01

94054_02

0.1

1

10

100

0

VR - Reverse Voltage (V)

I

R

- Reverse Current (μA)

T

J

= 125 °C

TJ = 25 °C

1000

100 600500

300

10 000

TJ = 150 °C

400200

10

100

10 100 1000

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

TJ = 25 °C

94054_03

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1

1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Response

Single pulse

(thermal response)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

94054_04

www.vishay.com

VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF

Vishay Semiconductors

- Instantaneous Forward Current (A)

F

I

94054_01

10

1

1.0 2.41.2 1.4

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

1.8 2.2

2.01.6

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

Fig. 2 - Typical Reverse Current vs. Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Revision: 10-Jun-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 4 - Maximum Thermal Impedance Z

thJC

3

, [e-mail], [e-mail]

Characteristics

Document Number: 94054