Vishay VS-HFA15TB60PbF Data Sheet
www.vishay.com
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
Ultrafast Soft Recovery Diode, 15 A
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
(typ.) 23 ns
t
rr
T
max. 150 °C
J
Diode variation Single die
15 A
600 V
1.7 V
HEXFRED®,
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15TB60PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60PbF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
RRM
VS-HFA15TB60PbF
Vishay Semiconductors
and Q
rr
®
product line features
RRM
) and
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Revision: 06-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
F
FSM
FRM
, T
R
TC = 100 °C 15
D
TC = 25 °C 74
T
= 100 °C 29
C
Stg
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
600 V
150
60
- 55 to + 150 °C
Document Number: 94053
ASingle pulse forward current I
W
VS-HFA15TB60PbF
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
IR = 100 μA 600 - -
IF = 15 A
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
FM
I
RM
T
S
= 30 A - 1.5 2.0
I
F
I
= 15 A, TJ = 125 °C - 1.2 1.6
F
VR = VR rated
= 125 °C, VR = 0.8 x VR rated
T
J
See fig. 1
See fig. 2
VR = 200 V See fig. 3 - 25 50 pF
Measured lead to lead 5 mm from package
body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr
rr1
rr2
rr1
rr2
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -
TJ = 25 °C
TJ = 125 °C - 74 120
TJ = 25 °C - 4.0 6.0
TJ = 125 °C - 6.5 10
TJ = 25 °C - 84 180
TJ = 125 °C - 241 600
I
= 15 A
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
/dt1 TJ = 25 °C - 188 -
/dt2 TJ = 125 °C - 160 -
Vishay Semiconductors
-1.31.7
-1.010
- 400 1000
-8.0-nH
-4260
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
lead
R
thJC
R
thJA
Weight
Mounting torque
Marking device Case style TO-220AC HFA15TB60
Revision: 06-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
Typical socket mount - - 80
-2.0- g
-0.07- oz.
6.0
(5.0)
2
-
Document Number: 94053
12
kgf · cm
(10)
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
K/W
www.vishay.com
1
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
1.0 2.41.2 1.4
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.8 2.2
2.01.6
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
VS-HFA15TB60PbF
Vishay Semiconductors
10 000
1000
TJ = 150 °C
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
- Junction Capacitance (pF)
T
C
10
10 100 1000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
- Reverse Current (µA)
R
I
TJ = 25 °C
VR - Reverse Voltage (V)
100
10
0.1
0.01
1
100 600500
0
TJ = 125 °C
TJ = 25 °C
300
400200
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
Revision: 06-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Characteristics
Document Number: 94053
Loading...