Vishay VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF Data Sheet
VS-HFA15PB60PbF
TO-247AC modified
Base
common
cathode
2
13
Anode
Cathode
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 15 A
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 19 ns
rr
T
max. 150 °C
J
Diode variation Single die
15 A
600 V
1.7 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15PB60PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15PB60PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15PB60PbF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
RRM
and Q
rr
®
product line features
) and
RRM
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94052 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 16-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
TC = 100 °C 15
TC = 25 °C 74
T
= 100 °C 29
C
Stg
600 V
150
60
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA15PB60PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 15 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
See fig. 8
b
V
BR
IR = 100 μA 600 - -
IF = 15 A
= 30 A - 1.5 2.0
I
F
I
= 15 A, TJ = 125 °C - 1.2 1.6
F
VR = VR rated
= 125 °C, VR = 0.8 x VR rated
T
J
VR = 200 V See fig. 3 - 25 50 pF
T
Measured lead to lead 5 mm from package body - 12 - nH
S
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 19 -
TJ = 25 °C
TJ = 125 °C - 74 120
TJ = 25 °C - 4.0 6.0
TJ = 125 °C - 6.5 10
TJ = 25 °C - 80 180
TJ = 125 °C - 220 600
/dt1 TJ = 25 °C - 188 -
/dt2 TJ = 125 °C - 160 -
dI
dI
I
RM
t
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
FM
rr
rr1
rr2
rr1
rr2
®
= 15 A
I
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
See fig. 1
See fig. 2
-1.31.7
-1.010
- 400 1000
-4260
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA15PB60
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
Typical socket mount - - 40
K/W
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 16-May-11
This document is subject to change without notice.
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100
0.01
0.1
1
10
100
0
VR - Reverse Voltage (V)
I
R
- Reverse Current (μA)
1000
100 600500
300
10 000
400200
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
100
10 100 1000
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
1
- Instantaneous Forward Current (A)
F
I
1.0 2.41.2 1.4
J
1.8 2.22.01.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
HEXFRED
®
Ultrafast Soft Recovery Diode, 15 A
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
VS-HFA15PB60PbF
Vishay Semiconductors
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
Document Number: 94052 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 16-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Characteristics
thJC
www.vishay.com/doc?91000
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