Vishay VS-HFA12PA120CPbF Data Sheet
VS-HFA12PA120CPbF
TO-2 47AC
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 2 x 6 A
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
(typ.) 26 ns
t
rr
T
max. 150 °C
J
Diode variation Single die
2 x 6 A
1200 V
3.0 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA12PA120CPbF is a state of the art center tap
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. The VS-HFA12PA120CPbF has basic
ratings of 1200 V and 6 A per leg continuous current. In
addition to ultrafast recovery time, the HEXFRED
line features extremely low values of peak recovery current
(I
RRM
during the t
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA12PA120CPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters, converters, UPS
systems, and power factor correction circuits), motor drives,
and many other similar applications where high speed, high
efficiency is needed.
®
and Q
RRM
) and does not exhibit any tendency to “snap-off”
portion of recovery. The HEXFRED features
b
rr
®
product
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94597 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
per leg
per device 12
This document is subject to change without notice.
R
I
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C
TC = 25 °C 62.5
T
= 100 °C 25
C
Stg
1200 V
6
80
24
W
- 55 to + 150 °C
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A
VS-HFA12PA120CPbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 2 x 6 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
rr
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of recovery
current during t
b
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr1
rr2
rr1
rr2
IR = 100 μA 1200 - -
IF = 6 A - 2.7 3.0
I
= 12 A - 3.5 3.9
F
I
= 6 A, TJ = 125 °C - 2.4 2.8
F
VR = VR rated - 0.26 5.0
T
= 125 °C, VR = 0.8 x VR rated - 110 500
J
VR = 200 V - 9.0 14 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 26 -
TJ = 25 °C
TJ = 125 °C - 87 130
TJ = 25 °C - 4.4 8.0
TJ = 125 °C - 5.0 9.0
TJ = 25 °C - 116 320
TJ = 125 °C - 233 585
/dt1 TJ = 25 °C - 180 -
/dt2 TJ = 125 °C - 100 -
®
= 6 A
I
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
-5380
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC (JEDEC) HFA12PA120C
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--2.0
Typical socket mount - - 80
K/W
Mounting surface, flat, smooth and greased - 0.50 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
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HEXFRED
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
0.1
1
10
100
0 2 4 6
T = 150°C
T = 125°C
T = 25°C
J
J
J
Reverse Current - I
R
(µA)
Reverse Voltage - V
R
(V)
0.01
0.1
1
10
100
1000
0 200 400 600 800 1000 1200 1400
125 °C
100 °C
25 °C
T = 150 °C
J
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
1
10
100
1 1 0 100 1000 10000
TJ = 150 °C
Thermal Impedance Z
thJC
(°C/W)
t1, Rectangular Pulse Duration (s)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t
1/t2
2. Peak T
J
= PDM x Z
thJC
+ T
C
®
Ultrafast Soft Recovery Diode, 2 x 6 A
VS-HFA12PA120CPbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs.
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Reverse Voltage
Document Number: 94597 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Characteristics
thJC
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