Vishay VS-HFA08TB60PbF Data Sheet
VS-HFA08TB60PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 8 A
Base
cathode
2
1
Cathode
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 18 ns
rr
T
max. 150 °C
J
Diode variation Single die
Anode
TO-220AC
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
3
8 A
600 V
1.7 V
DESCRIPTION
VS-HFA08TB60PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 8 A continuous current, the
VS-HFA08TB60PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB60PbF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
product line features
RRM
) and
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94047 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 8
TC = 25 °C 36
T
= 100 °C 14
C
Stg
600 V
60
24
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA08TB60PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of recovery
current during t
b
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr1
rr2
IR = 100 μA 600 - -
IF = 8.0 A
I
= 16 A - 1.7 2.1
F
I
= 8.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
= 125 °C, VR = 0.8 x VR rated
T
J
VR = 200 V See fig. 3 - 10 25 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 -
TJ = 25 °C
TJ = 125 °C - 55 90
TJ = 25 °C - 3.5 5.0
TJ = 125 °C - 4.5 8.0
rr1
rr2
TJ = 25 °C - 65 138
TJ = 125 °C - 124 360
/dt1 TJ = 25 °C - 240 -
/dt2 TJ = 125 °C - 210 -
®
= 8.0 A
I
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
See fig. 1
See fig. 2
-1.41.7
-0.35.0
- 100 500
-8.0-nH
-3755
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-220AC HFA08TB60
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--3.5
Typical socket mount - - 80
K/W
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11
This document is subject to change without notice.
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HEXFRED
1
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.4 3.20.8 1.2
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
2.0 2.8
0.1
2.41.6
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal response)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
®
Ultrafast Soft Recovery Diode, 8 A
VS-HFA08TB60PbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0
Fig. 2 - Typical Reverse Current vs.
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
400200
100 600500
300
VR - Reverse Voltage (V)
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94047 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
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Characteristics
thJC
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