Vishay VS-HFA08TB120SPbF Data Sheet

VS-HFA08TB120SPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 8 A

D2PAK

PRODUCT SUMMARY

V

R

at 8 A at 25 °C 3.3 V

V

F

I

F(AV)

t

(typical) 28 ns

rr

T

(maximum) 150 °C

J

Q

(typical) 140 nC

rr

/dt (typical) at 125 °C 85 A/μs

dI

(rec)M

I

(typical) 4.5 A

RRM

N/C

Base

cathode

1

2

Anode

1200 V

8 A

HEXFRED

3

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA08TB120S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

RRM

rr

®

product line features

RRM

) and

b

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94046 For technical questions, contact: [e-mail]
Revision: 22-Feb-10 1

J

F

FSM

FRM

, T

R

TC = 100 °C 8

D

TC = 25 °C 73.5

T

= 100 °C 29

C

Stg

1200 V

130

32

W

- 55 to + 150 °C

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ASingle pulse forward current I

VS-HFA08TB120SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

S

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

rr

Reverse recovery time

Peak recovery current

Reverse recovery charge

Peak rate of fall of
recovery current during t

b

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr1

rr2

rr1

rr2

IR = 100 μA 1200 - -

IF = 8.0 A - 2.6 3.3

I

= 16 A - 3.4 4.3

F

I

= 8.0 A, TJ = 125 °C - 2.4 3.1

F

VR = VR rated

= 125 °C, VR = 0.8 x VR rated

T

J

VR = 200 V - 11 20 pF

T

-0.3110

- 135 1000

Measured lead to lead 5 mm from package body - 8.0 - nH

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 -

TJ = 25 °C

-6395

TJ = 125 °C - 106 160

TJ = 25 °C - 4.5 8.0

= 8.0 A

I

TJ = 125 °C - 6.2 11

TJ = 25 °C - 140 380

F

/dt = 200 A/μs

dI

F

V

= 200 V

R

TJ = 125 °C - 335 880

/dt1 TJ = 25 °C - 133 -

/dt2 TJ = 125 °C - 85 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

lead

R

thJC

R

thJA

Weight

Marking device Case style D

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2 Revision: 22-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--1.7

K/W

Typical socket mount - - 40

-2.0- g

-0.07- oz.

2

PAK HFA08TB120S

Document Number: 94046

VS-HFA08TB120SPbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 8 A

100

10

TJ = 150 °C

= 125 °C

T

J

T

= 25 °C

J

1

- Instantaneous Forward Current (A)

F

I

94046_01

0246810

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

100

1000

100

10

1

- Reverse Current (μA)

0.1

R

I

0.01
0 300 900600 1200

94046_02

VR - Reverse Voltage (V)

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

TJ = 25 °C

10

- Junction Capacitance (pF)

T

C

1

1 10 100 10 0001000

94046_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

P

D = 0.50
D = 0.20

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

94046_04

Single pulse

(thermal response)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Characteristics

thJC

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

DM

t

1

t

2

1/t2

+ T

thJC

C

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www.vishay.com

Revision: 22-Feb-10 3

VS-HFA08TB120SPbF

Vishay High Power Products

160

VR = 160 V

= 125 °C

T

J

(ns)

rr

t

94046_05

140

120

100

= 25 °C

T

J

80

60

40

20

100 1000

IF = 8 A

= 4 A

I

F

dIF/dt (A/μs)

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

20

VR = 160 V

= 125 °C

T

J

= 25 °C

T

16

J

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

1200

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

800

IF = 8 A

= 4 A

I

600

400

200

0

100 1000

F

Fig. 7 - Typical Stored Charge vs. dI

IF = 8 A

= 4 A

I

F

(nC)

rr

Q

94046_07

1000

1000

dIF/dt (A/μs)

/dt (Per Leg)

F

(A)

rr

I

94046_06

12

8

4

0

100 1000

IF = 8 A

= 4 A

I

F

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI

100

/dt (A/μs)

(rec)M

dI

10

100 1000

94046_08

/dt

F

Fig. 8 - Typical dI

dIF/dt (A/μs)

VR = 160 V

= 125 °C

T

J

= 25 °C

T

J

/dt vs. dIF/dt

(rec)M

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Document Number: 94046

4 Revision: 22-Feb-10

VS-HFA08TB120SPbF

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

= 200 V

V

R

0.01 Ω

L = 70 μH

dIF/dt

adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

dIF/dt

(1)

(1) dI

/dt - rate of change of current

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

t

D

IRFP250

S

(3)

t

rr

a

(2)

I

RRM

(4) Q
and I

(5) dI
current during t

Vishay High Power Products

D.U.T.

t

b

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

=

rr

(5)

/dt

trr x I

RRM

2

portion of t

b

rr

dI

0.75 I

RRM

- area under curve dened by t

rr

RRM

/dt - peak rate of change of

(rec)M

rr

Fig. 10 - Reverse Recovery Waveform and Definitions

Document Number: 94046 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Feb-10 5

VS-HFA08TB120SPbF

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

VS- HF A 08 TB 120 S TRL PbF

1 - HPP product suffix

2 - HEXFRED® family

- Process designator: A = Electron irradiated

3

- Current rating (08 = 8 A)

4

- Package outline (TB = TO-220, 2 leads)

5

- Voltage rating (120 = 1200 V)

6

- S = D2PAK

7

- None = Tube (50 pieces)

8

TRL = Tape and reel (left oriented)

TRR = Tape and reel (right oriented)

- PbF = Lead (Pb)-free

9

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

324

51

6789

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95046

Part marking information www.vishay.com/doc?95054

Packaging information www.vishay.com/doc?95032

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6 Revision: 22-Feb-10

Document Number: 94046

DIMENSIONS in millimeters and inches

c

B

Detail A

c2

AA

A

± 0.004

B

M

A

Lead tip

(3)

(3)

View A - A

(E)

(D1)

E1

B

H

A1

Detail “A”

Rotated 90 °CW

Scale: 8:1

L

Gauge

plane

0° to 8°

L3

L4

Seating

plane

Section B - B and C - C

Scale: None

(4)

(4)

(b, b2)

b1, b3

(c)

c1

Base
Metal

Plating

Conforms to JEDEC outline D

2

PAK (SMD-220)

132

D

C

A

L2

E

(2)(3)

(2)

4

H

BB

2 x b

2 x b2

L1

0.010

A

B

MM

(3)

e

2 x

Pad layout

MIN.

11.00
(0.43)

MIN.

9.65

(0.38)

MIN.

3.81

(0.15)

MIN.

2.32

(0.08)

17.90 (0.70)

15.00 (0.625)

2.64 (0.103)

2.41 (0.096)

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

Outline Dimensions

Vishay Semiconductors

D2PAK

SYMBOL

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

(2)

(3)

(4)

(5)

(6)

(7)

Document Number: 95046 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 [e-mail]

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

This document is subject to change without notice.

, [e-mail], [e-mail] 1

MILLIMETERS INCHES

www.vishay.com/doc?91000

NOTES

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