Vishay VS-HFA08TB120SPbF Data Sheet

VS-HFA08TB120SPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 8 A

D2PAK

PRODUCT SUMMARY

V

R

at 8 A at 25 °C 3.3 V

V

F

I

F(AV)

t

(typical) 28 ns

rr

T

(maximum) 150 °C

J

Q

(typical) 140 nC

rr

/dt (typical) at 125 °C 85 A/μs

dI

(rec)M

I

(typical) 4.5 A

RRM

N/C

Base

cathode

1

2

Anode

1200 V

8 A

HEXFRED

3

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA08TB120S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

RRM

rr

®

product line features

RRM

) and

b

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94046 For technical questions, contact: [e-mail]
Revision: 22-Feb-10 1

J

F

FSM

FRM

, T

R

TC = 100 °C 8

D

TC = 25 °C 73.5

T

= 100 °C 29

C

Stg

1200 V

130

32

W

- 55 to + 150 °C

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ASingle pulse forward current I

VS-HFA08TB120SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 8 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

S

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

rr

Reverse recovery time

Peak recovery current

Reverse recovery charge

Peak rate of fall of
recovery current during t

b

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr1

rr2

rr1

rr2

IR = 100 μA 1200 - -

IF = 8.0 A - 2.6 3.3

I

= 16 A - 3.4 4.3

F

I

= 8.0 A, TJ = 125 °C - 2.4 3.1

F

VR = VR rated

= 125 °C, VR = 0.8 x VR rated

T

J

VR = 200 V - 11 20 pF

T

-0.3110

- 135 1000

Measured lead to lead 5 mm from package body - 8.0 - nH

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 -

TJ = 25 °C

-6395

TJ = 125 °C - 106 160

TJ = 25 °C - 4.5 8.0

= 8.0 A

I

TJ = 125 °C - 6.2 11

TJ = 25 °C - 140 380

F

/dt = 200 A/μs

dI

F

V

= 200 V

R

TJ = 125 °C - 335 880

/dt1 TJ = 25 °C - 133 -

/dt2 TJ = 125 °C - 85 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

lead

R

thJC

R

thJA

Weight

Marking device Case style D

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 22-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--1.7

K/W

Typical socket mount - - 40

-2.0- g

-0.07- oz.

2

PAK HFA08TB120S

Document Number: 94046

VS-HFA08TB120SPbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 8 A

100

10

TJ = 150 °C

= 125 °C

T

J

T

= 25 °C

J

1

- Instantaneous Forward Current (A)

F

I

94046_01

0246810

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

100

1000

100

10

1

- Reverse Current (μA)

0.1

R

I

0.01
0 300 900600 1200

94046_02

VR - Reverse Voltage (V)

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

TJ = 25 °C

10

- Junction Capacitance (pF)

T

C

1

1 10 100 10 0001000

94046_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

P

D = 0.50
D = 0.20

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

94046_04

Single pulse

(thermal response)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Characteristics

thJC

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

DM

t

1

t

2

1/t2

+ T

thJC

C

Document Number: 94046 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Feb-10 3