Vishay VS-HFA08TB120PbF Data Sheet
VS-HFA08TB120PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 8 A
Base
cathode
2
1
Cathode
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 28 ns
rr
T
max. 150 °C
J
Diode variation Single die
Anode
TO-220AC
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
3
8 A
1200 V
3.3 V
VS-HFA08TB120PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08TB120PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
®
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
product line features
) and
RRM
does not exhibit any tendency to “snap-off” during the t
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08TB120PbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
mumany other similar applications where high speed, high
efficiency is needed.
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
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Revision: 24-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 8
TC = 25 °C 73.5
T
= 100 °C 29
C
Stg
1200 V
130
32
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA08TB120PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 8 A
ELECTRIACL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of recovery current
during t
b
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr1
rr2
IR = 100 μA 1200 - -
IF = 8.0 A - 2.6 3.3
I
= 16 A - 3.4 4.3
F
I
= 8.0 A, TJ = 125 °C - 2.4 3.1
F
VR = VR rated - 0.31 10
T
= 125 °C, VR = 0.8 x VR rated - 135 1000
J
VR = 200 V - 11 20 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 -
TJ = 25 °C
TJ = 125 °C - 106 160
TJ = 25 °C - 4.5 8.0
TJ = 125 °C - 6.2 11
rr1
rr2
TJ = 25 °C - 140 380
TJ = 125 °C - 335 880
/dt1 TJ = 25 °C - 133 -
/dt2 TJ = 125 °C - 85 -
®
I
= 8.0 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
-6395
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
lead
R
thJC
R
thJA
R
thCS
Weight
Mounting torque
Marking device Case style TO-220AC HFA08TB120
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
Typical socket mount - - 40
K/W
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11
This document is subject to change without notice.
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HEXFRED
1
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0 102
4
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
6
8
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10 000
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
®
Ultrafast Soft Recovery Diode, 8 A
1000
100
10
1
VS-HFA08TB120PbF
Vishay Semiconductors
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
- Reverse Current (µA)
0.1
R
I
0.01
0
300 1200900
TJ = 25 °C
600
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94045 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
Characteristics
thJC
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