Vishay VS-HFA08TA60CSPbF Data Sheet

VS-HFA08TA60CSPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 4 A

D2PAK

PRODUCT SUMMARY

V

R

at 4 A at 25 °C 1.8 V

V

F

I

F(AV)

t

(typical) 17 ns

rr

T

(maximum) 150 °C

J

Q

rr

/dt 280 A/μs

dI

(rec)M

Base

common

cathode

2

2

1

Common

Anode Anode

cathode

2 x 4 A

3

600 V

40 nC

HEXFRED

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA08TA60CSPbF is a state of the art center tap
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60CSPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60CSPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.

®

RRM

rr

®

product line features extremely low values of

) and does not exhibit any

RRM

portion of recovery. The

b

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

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Revision: 24-Feb-10 1

per leg

per device 8

J

I

F

FSM

FRM

, T

R

TC = 100 °C

D

TC = 25 °C 25

T

= 100 °C 10

C

Stg

600 V

4

25

16

W

- 55 to + 150 °C

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A

VS-HFA08TA60CSPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 4 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

rr1

rr2

Reverse recovery time
See fig. 5, 6 and 16

Peak recovery current
See fig. 7 and 8

Reverse recovery charge
See fig. 9 and 10

Peak rate of fall of recovery
current during t

b

See fig. 11 and 12

IR = 100 μA 600 - -

IF = 4.0 A

I

= 8.0 A - 1.8 2.2

F

I

= 4.0 A, TJ = 125 °C - 1.4 1.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 44 300

J

VR = 200 V See fig. 3 - 4.0 8.0 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-1.51.8

- 0.17 3.0

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 -

TJ = 25 °C

-2842

TJ = 125 °C - 38 57

TJ = 25 °C - 2.9 5.2

TJ = 125 °C - 3.7 6.7

TJ = 25 °C - 40 60

TJ = 125 °C - 70 105

I

= 4.0 A

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

/dt1 TJ = 25 °C - 280 -

/dt2 TJ = 125 °C - 235 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

lead

R

thJC

R

thJA

Weight

Mounting torque

Marking device Case style D

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2 Revision: 24-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--5.0

K/W

Typical socket mount - - 80

-2.0- g

-0.07- oz.

6.0

(5.0)

2

PAK HFA08TA60CS

-

12

(10)

kgf · cm

(lbf · in)

Document Number: 94596

VS-HFA08TA60CSPbF

100

10

0.1

- Instantaneous Forward Current (A)

F

I

94596_01

HEXFRED

Ultrafast Soft Recovery Diode, 2 x 4 A

TJ = 150 °C

= 125 °C

T

1

0123456

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

J

= 25 °C

T

J

100

®

1000

100

10

0.1

- Reverse Current (μA)

R

0.01

I

0.001

94596_02

Vishay High Power Products

TJ = 150 °C

TJ = 125 °C

1

TJ = 25 °C

0 100 200 300 400 500

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

10

1

0.1

- Thermal Response

thJC

Z

0.01

0.00001

94596_04

Single pulse

(thermal resistance)

TJ = 25 °C

10

- Junction Capacitance (pF)

T

C

1

1 10 100 1000

94596_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

t

1

t

2

1/t2

+ T

thJC

C

1

Document Number: 94596 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 24-Feb-10 3