Vishay VS-HFA08TA60CPbF Data Sheet
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TO-220AB
Anode
13
2
Base
Common
Cathode
2
Common
Cathode
Anode
Ultrafast Soft Recovery Diode, 2 x 4 A
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
(typ.) 17 ns
t
rr
T
max. 150 °C
J
Diode variation Common cathode
2 x 4 A
600 V
1.8 V
HEXFRED®,
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TA60CPbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
VS-HFA08TA60CPbF
Vishay Semiconductors
and Q
RRM
®
rr
product line features extremely low values of
) and does not exhibit any
RRM
portion of recovery. The
b
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Revision: 23-May-11
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per leg
per device 8
J
I
F
FSM
FRM
, T
R
TC = 100 °C
D
TC = 25 °C 25
T
= 100 °C 10
C
Stg
1
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600 V
4
25
16
- 55 to + 150 °C
Document Number: 94043
A
W
VS-HFA08TA60CPbF
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
IR = 100 μA 600 - -
IF = 4.0 A
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
FM
I
RM
T
S
= 8.0 A - 1.8 2.2
I
F
I
= 4.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 44 300
J
See fig. 1
See fig. 2
VR = 200 V See fig. 3 - 4.0 8.0 pF
Measured lead to lead 5 mm from package
body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
b
See fig. 11 and 12
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr
rr1
rr2
rr1
rr2
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 -
TJ = 25 °C
TJ = 125 °C - 38 57
TJ = 25 °C - 2.9 5.2
TJ = 125 °C - 3.7 6.7
TJ = 25 °C - 40 60
TJ = 125 °C - 70 105
I
= 4.0 A
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
/dt1 TJ = 25 °C - 280 -
/dt2 TJ = 125 °C - 235 -
Vishay Semiconductors
-1.51.8
- 0.17 3.0
-8.0-nH
-2842
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-220AB HFA08TA60C
Revision: 23-May-11
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.063" from case (1.6 mm) for 10 s - - 300 °C
--5.0
Typical socket mount - - 80
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
2
-
Document Number: 94043
12
kgf · cm
(10)
(lbf · in)
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K/W
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0.01
0.1
1
10
100
0 100
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 125 °C
TJ = 25 °C
1000
200 500400
300
0.001
TJ = 150 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
100
10
1
- Instantaneous
F
I
Forward Current (A)
TJ = 150 °C
T
= 125 °C
J
= 25 °C
T
J
VS-HFA08TA60CPbF
Vishay Semiconductors
0.1
14
0 62
3
5
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
10
- Junction Capacitance (pF)
T
C
1
1 10 100 1000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
TJ = 25 °C
VR - Reverse Voltage (V)
Revision: 23-May-11
Fig. 4 - Maximum Thermal Impedance Z
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
thJC
3
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Characteristics
Document Number: 94043
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