Vishay VS-HFA08SD60SPbF Data Sheet
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D-PAK (TO-252AA)
HEXFRED® Ultrafast Soft Recovery Diode, 8 A
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
typ. 18 ns
t
rr
T
max. 150 °C
J
Diode variation Single die
N/C
1
8 A
600 V
1.7 V
2, 4
Anode
VS-HFA08SD60SPbF
Vishay Semiconductors
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low I
• Very low Q
• Guaranteed avalanche
3
• Specified at operating conditions
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems. The softness of
the recovery eliminates the need for a snubber in most
applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
RRM
rr
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Peak repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
Revision: 14-Jun-11
RRM
F
FSM
FRM
D
, T
J
,
V
BR
V
I
R
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR = 100 μA 600 - -
R
IF = 8 A
I
F
T
S
= 16 A - 1.7 2.1
F
I
= 8 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated - 0.3 5.0
T
= 125 °C, VR = 0.8 x VR rated - 100 500
J
VR = 200 V See fig. 3 - 10 25 pF
Measured lead to lead 5 mm from package body - 8.0 - nH
TC = 100 °C 8
TC = 100 °C 14 W
Stg
See fig. 1
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
600 V
60
24
- 55 to + 150 °C
-1.41.7
Document Number: 94042
ASingle pulse forward current I
V
μA
VS-HFA08SD60SPbF
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Rate of fall of recovery current dI
(rec)M
rr
RRM
rr
/dt
= 25 °C
J
= 125 °C - 55 90
T
J
TJ = 25 °C - 3.5 5.0
I
= 8 A
T
= 125 °C - 4.5 8.0
J
TJ = 25 °C - 65 138
T
= 125 °C - 124 360
J
= 25 °C - 240 -
T
J
T
= 125 °C - 210 -
J
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction
and storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Marking device Case style D-PAK HFA08SD60S
T
, T
J
Stg
--3.5
R
thJC
Typical socket mount - - 80
R
thJA
Vishay Semiconductors
-3755
- 55 - 150 °C
-2.0- g
-0.07- oz.
nsT
A
nC
A/μs
°C/W
Revision: 14-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94042
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.4 4.00.8
1.6
VF - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
2.4
0.1
3.2
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-HFA08SD60SPbF
Vishay Semiconductors
1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0
TJ = 150 °C
100 200
T
= 125 °C
J
TJ = 25 °C
300 500400
600
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
- Junction Capacitance (pF)
T
C
1
1 10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
Revision: 14-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Characteristics
thJC
3
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Document Number: 94042
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