Vishay VS-HFA08PB60PbF Data Sheet
VS-HFA08PB60PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 8 A
Base
common
cathode
2
1
Anode
1
TO-247AC modified
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 18 ns
rr
T
max. 150 °C
J
Diode variation Single die
Anode
2
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08PB60PbF is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
3
8 A
600 V
1.7 V
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A
continuous current, the VS-HFA08PB60PbF is especially
well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
®
product line features extremely low values of
) and does not exhibit any
RRM
portion of recovery. The
b
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08PB60PbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94041 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 8
TC = 25 °C 36
T
= 100 °C 14
C
Stg
600 V
60
24
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA08PB60PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
IR = 100 μA 600 - -
IF = 8.0 A
I
= 16 A - 1.7 2.1
F
I
= 8.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 100 500
J
VR = 200 V See fig. 3 - 10 25 pF
T
Measured lead to lead 5 mm from package
S
body
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 -
TJ = 25 °C
TJ = 125 °C - 55 90
TJ = 25 °C - 3.5 5.0
TJ = 125 °C - 4.5 8.0
TJ = 25 °C - 65 138
TJ = 125 °C - 124 360
/dt1 TJ = 25 °C - 240 -
/dt2 TJ = 125 °C - 210 -
®
I
= 8.0 A
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
See fig. 1
See fig. 2
-1.41.7
-0.35.0
-8.0-nH
-3755
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
lead
R
JC
R
JA
R
CS
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA08PB60
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0.063" from case (1.6 mm) for 10 s - - 300 °C
--3.5
Typical socket mount - - 40
K/W
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
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100
0.001
0.1
1
10
100
0 200 300
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1000
400 600
0.01
100 500
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10
1
- Instantaneous
F
I
Forward Current (A)
0.1
0.4 3.21.2 2.0
0.8 2.8
1.6 2.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
HEXFRED
®
Ultrafast Soft Recovery Diode, 8 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
VS-HFA08PB60PbF
Vishay Semiconductors
Document Number: 94041 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.50
D = 0.20
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
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This document is subject to change without notice.
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t
1
t
2
1/t2
+ T
thJC
C
1
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