Vishay VS-HFA08PB120PbF Data Sheet
VS-HFA08PB120PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 8 A
Cathode
to base
2
1
Anode
1
TO-247AC modified
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
at I
V
F
F
t
(typ.) 28 ns
rr
T
max. 150 °C
J
Diode variation Single die
Anode
2
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08PB120PbF is a state of the art ultrafast recovery
3
8 A
1200 V
3.3 V
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 8 A continuous current, the
VS-HFA08PB120PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
®
product line features
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
portion of recovery. The HEXFRED features combine to
b
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA08PB120PbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
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Revision: 23-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 8
TC = 25 °C 73.5
T
= 100 °C 29
C
Stg
1200 V
130
32
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA08PB120PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery
current during t
b
See fig. 8
IR = 100 μA 1200 - -
IF = 8.0 A
I
= 16 A - 3.4 4.3
F
I
= 8.0 A, TJ = 125 °C - 2.4 3.1
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 135 1000
J
VR = 200 V See fig. 3 - 11 20 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 28 -
TJ = 25 °C
TJ = 125 °C - 106 160
TJ = 25 °C - 4.5 8.0
TJ = 125 °C - 6.2 11
rr1
rr2
TJ = 25 °C - 140 380
TJ = 125 °C - 335 880
/dt1 TJ = 25 °C - 133 -
/dt2 TJ = 125 °C - 85 -
®
I
= 8.0 A
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
See fig. 1
See fig. 2
-2.63.3
-0.3110
-8.0-nH
-6395
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA08PB120
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0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
Typical socket mount - - 40
K/W
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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HEXFRED
1
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0104
6
I
F
- Instantaneous
Forward Current (A)
100
28
VFM - Forward Voltage Drop (V)
0.01
0.1
1
10
100
0 300 600
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1000
900 1200
TJ = 100 °C
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 000
®
Ultrafast Soft Recovery Diode, 8 A
VS-HFA08PB120PbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Values of Reverse Current vs.
Document Number: 94040 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
- Thermal Response
thJC
Z
0.01
Single pulse
(thermal resistance)
0.00001 0.0001 0.001 0.01 0.1
Fig. 4 - Maximum Thermal Impedance Z
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Characteristics
thJC
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This document is subject to change without notice.
Reverse Voltage
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t
1
t
2
1/t2
+ T
thJC
C
1
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