Vishay VS-HFA06TB120SPbF Data Sheet

VS-HFA06TB120SPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 6 A

D2PAK

PRODUCT SUMMARY

V

R

V

at 6 A at 25 °C 3.0 V

F

I

F(AV)

(typical) 26 ns

t

rr

T

(maximum) 150 °C

J

Q

(typical) 116 nC

rr

dI

/dt (typical) at 125 °C 100 A/μs

(rec)M

(typical) 4.4 A

I

RRM

N/C

HEXFRED

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

2

• Very low I

• Very low Q

RRM

rr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

1

Anode

3

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

1200 V

6 A

VS-HFA06TB120S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 6 A continuous current, the
VS-HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I

®

product line features

) and

RRM

does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA06TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94039 For technical questions, contact: [e-mail]
Revision: 22-Feb-10 1

J

F

FSM

FRM

, T

R

TC = 100 °C 6

D

TC = 25 °C 62.5

T

= 100 °C 25

C

Stg

1200 V

80

24

W

- 55 to + 150 °C

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ASingle pulse forward current I

VS-HFA06TB120SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 6 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

S

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

rr

Reverse recovery time

Peak recovery current

Reverse recovery charge

Peak rate of recovery current
during t

b

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr1

rr2

rr1

rr2

IR = 100 μA 1200 - -

IF = 6.0 A - 2.7 3.0

I

= 12 A - 3.5 3.9

F

I

= 6.0 A, TJ = 125 °C - 2.4 2.8

F

VR = VR rated - 0.26 5.0

T

= 125 °C, VR = 0.8 x VR rated - 110 500

J

VR = 200 V - 9.0 14 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 26 -

TJ = 25 °C

-5380

TJ = 125 °C - 87 130

TJ = 25 °C - 4.4 8.0

I

= 6.0 A

TJ = 125 °C - 5.0 9.0

TJ = 25 °C - 116 320

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

TJ = 125 °C - 233 585

/dt1 TJ = 25 °C - 180 -

/dt2 TJ = 125 °C - 100 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

R

R

R

lead

thJC

thJA

thCS

Weight

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2 Revision: 22-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--2.0

Typical socket mount - - 80

K/W

Mounting surface, flat, smooth and greased - 0.5 -

-2.0- g

-0.07- oz.

Document Number: 94039

VS-HFA06TB120SPbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 6 A

100

10

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

0.1

- Instantaneous Forward Current (A)

F

I

94039_01

1

0123456

VFM - Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs.

100

1000

100

10

1

- Reverse Current (μA)

0.1

R

I

0.01
0 200 400 600 1000 1200800 1400

94039_02

VR - Reverse Voltage (V)

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

Reverse Voltage

TJ = 25 °C

10

- Junction Capacitance (pF)

T

C

1

1 10 100 1000 10 000

94039_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.50
D = 0.20

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

94039_04

Single pulse

(thermal resistance)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Characteristics

thJC

P

DM

t

1

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t

2

1/t2

+ T

thJC

C

100

Document Number: 94039 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Feb-10 3