Vishay VS-HFA06TB120PbF Data Sheet
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Base
cathode
2
13
Cathode Anode
TO-220AC
Ultrafast Soft Recovery Diode, 6 A
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 26 ns
rr
T
max. 150 °C
J
Diode variation Single die
6 A
1200 V
3.0 V
HEXFRED®,
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA06TB120PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 6 A continuous current, the
VS-HFA06TB120PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA06TB120PbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
RRM
VS-HFA06TB120PbF
Vishay Semiconductors
and Q
rr
®
product line features
RRM
) and
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Revision: 23-May-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
R
F
FSM
FRM
D
, T
J
Stg
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TC = 100 °C 6
TC = 25 °C 62.5
T
= 100 °C 25
C
1
1200 V
80
24
- 55 to + 150 °C
Document Number: 94038
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ASingle pulse forward current I
W
VS-HFA06TB120PbF
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ELECTRIACL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
IR = 100 μA 1200 - -
IF = 6.0 A - 2.7 3.0
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
FM
I
RM
T
S
= 12 A - 3.5 3.9
I
F
I
= 6.0 A, TJ = 125 °C - 2.4 2.8
F
VR = VR rated - 0.26 5.0
T
= 125 °C, VR = 0.8 x VR rated - 110 500
J
VR = 200 V - 9.0 14 pF
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of recovery current
during t
b
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr
rr1
rr2
rr1
rr2
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 26 -
TJ = 25 °C
TJ = 125 °C - 87 130
TJ = 25 °C - 4.4 8.0
= 6.0 A
I
TJ = 125 °C - 5.0 9.0
TJ = 25 °C - 116 320
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
TJ = 125 °C - 233 585
/dt1 TJ = 25 °C - 180 -
/dt2 TJ = 125 °C - 100 -
Vishay Semiconductors
V
μA
-5380
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-220AC HFA06TB120
Revision: 23-May-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.063" from case (1.6 mm) for 10 s - - 300 °C
--2.0
Typical socket mount - - 80
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
2
-
Document Number: 94038
12
kgf · cm
(10)
(lbf · in)
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K/W
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0.01
0.1
1
10
100
0 200 600
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1000
800 14001200
400 1000
TJ = 100 °C
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 000
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
10
100
100
10
1
- Instantaneous
F
I
Forward Current (A)
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
VS-HFA06TB120PbF
Vishay Semiconductors
0.1
14
0 62
3
5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 23-May-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 4 - Maximum Thermal Impedance Z
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
thJC
3
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Characteristics
Document Number: 94038
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