Vishay VS-HFA06PB120PbF Data Sheet
VS-HFA06PB120PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 6 A
Base
common
cathode
2
1
Anode
1
TO-247AC modified
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 26 ns
rr
T
max. 150 °C
J
Diode variation Single die
Anode
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
3
2
6 A
1200 V
3.0 V
VS-HFA06PB120PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 6 A continuous current, the
VS-HFA06PB120PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
®
product line features
) and
RRM
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA06PB120PbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94037 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 6
TC = 25 °C 62.5
T
= 100 °C 25
C
Stg
1200 V
80
24
W
- 55 to + 150 °C
www.vishay.com/doc?91000
ASingle pulse forward current I
VS-HFA06PB120PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 6 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of recovery current
during t
b
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr1
rr2
IR = 100 μA 1200 - -
IF = 6.0 A - 2.7 3.0
I
= 12 A - 3.5 3.9
F
I
= 6.0 A, TJ = 125 °C - 2.4 2.8
F
VR = VR rated - 0.26 5.0
T
= 125 °C, VR = 0.8 x VR rated - 110 500
J
VR = 200 V - 9.0 14 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 26 -
TJ = 25 °C
TJ = 125 °C - 87 130
TJ = 25 °C - 4.4 8.0
TJ = 125 °C - 5.0 9.0
rr1
rr2
TJ = 25 °C - 116 320
TJ = 125 °C - 233 585
/dt1 TJ = 25 °C - 180 -
/dt2 TJ = 125 °C - 100 -
®
I
= 6.0 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
-5380
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC modified HFA06PB120
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94037
2 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--2.0
Typical socket mount - - 80
K/W
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
www.vishay.com/doc?91000
100
0.01
0.1
1
10
100
0 200 600
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1000
800 14001200
400 1000
TJ = 100 °C
10
1
- Instantaneous
F
I
Forward Current (A)
HEXFRED
®
Ultrafast Soft Recovery Diode, 6 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
VS-HFA06PB120PbF
Vishay Semiconductors
0.1
0 62
14
3
5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage
100
10
- Junction Capacitance (pF)
T
C
1
1 10 100 1000
TJ = 25 °C
10 000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
D = 0.50
D = 0.20
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
DM
t
1
t
2
1/t2
+ T
thJC
C
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94037 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
www.vishay.com/doc?91000
Loading...