Vishay VS-HFA04TB60SPbF Data Sheet

VS-HFA04TB60SPbF

Vishay High Power Products

D2PAK

PRODUCT SUMMARY

V

R

V

at 4 A at 25 °C 1.8 V

F

I

F(AV)

(typical) 17 ns

t

rr

T

(maximum) 150 °C

J

Q

at 125 °C 40 nC

rr

dI

/dt at 125 °C 280 A/μs

(rec)M

HEXFRED

®

Ultrafast Soft Recovery Diode, 4 A

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

RRM

rr

• Specified at operating temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA04TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 4 A continuous current, the
VS-HFA04TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t

portion of recovery. The HEXFRED features combine to

b

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA04TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

N/C

2

1

3

Anode

600 V

4 A

®

product line features

RRM

) and

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94036 For technical questions, contact: [e-mail]
Revision: 19-Feb-10 1

J

F

FSM

FRM

, T

R

TC = 100 °C 4

D

TC = 25 °C 25

T

= 100 °C 10

C

Stg

600 V

25

16

W

- 55 to + 150 °C

www.vishay.com

ASingle pulse forward current I

VS-HFA04TB60SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 4 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

rr1

rr2

Reverse recovery time
See fig. 5, 6

Peak recovery current

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

IR = 100 μA 600 - -

IF = 4.0 A

I

= 8.0 A - 1.8 2.2

F

I

= 4.0 A, TJ = 125 °C - 1.4 1.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 44 300

J

VR = 200 V See fig. 3 - 4.0 8.0 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-1.51.8

- 0.17 3.0

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 -

TJ = 25 °C

-2842

TJ = 125 °C - 38 57

TJ = 25 °C - 2.9 5.2

TJ = 125 °C - 3.7 6.7

TJ = 25 °C - 40 60

TJ = 125 °C - 70 105

I

= 4.0 A

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

/dt1 TJ = 25 °C - 280 -

/dt2 TJ = 125 °C - 235 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

lead

R

thJC

R

thJA

Weight

Marking device Case style D

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 19-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--5.0

K/W

Typical socket mount - - 80

-2.0- g

-0.07- oz.

2

PAK HFA04TB60S

Document Number: 94036

VS-HFA04TB60SPbF

100

10

0.1

- Instantaneous Forward Current (A)

F

I

94036_01

Ultrafast Soft Recovery Diode, 4 A

TJ = 150 °C

= 125 °C

T

1

01234 65

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

J

= 25 °C

T

J

100

HEXFRED

®

1000

100

10

1

0.1

- Reverse Current (μA)

R

I

0.01

0.001
0 100 200 300 400 500

94036_02

Vishay High Power Products

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

TJ = 25 °C

10

- Junction Capacitance (pF)

T

C

1

1101001000

94036_03

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.50
D = 0.20

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1

94036_04

Single pulse

(thermal response)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Characteristics

thJC

P

DM

t

1

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t

2

1/t2

+ T

thJC

C

1

Document Number: 94036 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 19-Feb-10 3