Vishay VS-HFA04TB60PbF Data Sheet
VS-HFA04TB60PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 4 A
Base
cathode
4
2
13
Cathode Anode
TO-220AC
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
t
typ. 17 ns
rr
T
max. 150 °C
J
Diode variation Single die
4 A
600 V
1.8 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA04TB60PBF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 4 A continuous current, the
VS-HFA04TB60PBF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
portion of recovery. The HEXFRED features combine to
t
b
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA04TB60PBF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
RRM
and Q
rr
®
product line features
) and
RRM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94035 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 4
TC = 25 °C 25
T
= 100 °C 10
C
Stg
600 V
25
16
W
- 55 to + 150 °C
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ASingle pulse forward current I
VS-HFA04TB60PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 4 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
See fig. 11 and 12
b
V
BR
IR = 100 μA 600 - -
IF = 4.0 A
I
FM
I
RM
T
S
t
rr
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
/dt1 TJ = 25 °C - 280 -
(rec)M
/dt2 TJ = 125 °C - 235 -
dI
(rec)M
= 8.0 A - 1.8 2.2
F
I
= 4.0 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 44 300
J
VR = 200 V See fig. 3 - 4.0 8.0 pF
Measured lead to lead 5 mm from package
body
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 17 -
TJ = 25 °C
TJ = 125 °C - 38 57
TJ = 25 °C - 2.9 5.2
TJ = 125 °C - 3.7 6.7
TJ = 25 °C - 40 60
TJ = 125 °C - 70 105
®
I
= 4 A
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
See fig. 1
See fig. 2
-1.51.8
- 0.17 3.0
-8.0-nH
-2842
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
lead
R
thJC
R
thA
R
thS
Weight
Mounting torque
Marking device Case style TO-220AC HFA04TB60
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
--5.0
Typical socket mount - - 80
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
This document is subject to change without notice.
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K/W
HEXFRED
1
10
0 62
3
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
14
0.1
5
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
®
Ultrafast Soft Recovery Diode, 4 A
1000
100
VS-HFA04TB60PbF
Vishay Semiconductors
TJ = 150 °C
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
10
- Junction Capacitance (pF)
T
C
1
1 10 100 1000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
- Reverse Current (µA)
R
I
TJ = 25 °C
VR - Reverse Voltage (V)
10
0.1
0.01
0.001
1
100 200
0
TJ = 125 °C
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
300 500400
Document Number: 94035 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
1
0.1
- Thermal Response
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Characteristics
thJC
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This document is subject to change without notice.
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t
1
t
2
1/t2
+ T
thJC
C
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