Vishay VS-HFA04SD60SPbF Data Sheet
VS-HFA04SD60SPbF
D-PAK (TO-252AA)
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Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 4 A
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
t
typ. 17 ns
rr
T
max. 150 °C
J
Diode variation Single die
N/C
1
4 A
600 V
1.8 V
2, 4
Anode
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low I
• Very low Q
3
• Guaranteed avalanche
RRM
rr
• Specified at operating temperature
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Repetitive peak forward current I
Maximum power dissipation P
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage
See fig. 1
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
Revision: 14-Jun-11
RRM
F(AV)
FSM
FRM
D
, T
J
,
V
BR
V
V
I
R
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR = 100 μA 600 - -
R
IF = 4 A - 1.5 1.8
I
F
T
S
= 8 A - 1.8 2.2
F
I
= 4 A, TJ = 125 °C - 1.4 1.7
F
VR = VR rated - 0.17 3.0
T
= 125 °C, VR = 0.8 x VR rated - 44 300
J
VR = 200 V - 4 8 pF
Measured lead to lead 5 mm from package body - 8.0 - nH
TC = 100 °C 4
TC = 116 °C 16
TC = 100 °C 10 W
Stg
1
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600 V
25
- 55 to 150 °C
Document Number: 94034
ASingle pulse forward current I
V
μA
VS-HFA04SD60SPbF
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DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V - 17 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Rate of fall of recovery current dI
(rec)M
rr
RRM
rr
/dt
= 25 °C
J
T
= 125 °C - 38 57
J
TJ = 25 °C - 2.9 5.2
= 4 A
I
T
= 125 °C - 3.7 6.7
J
TJ = 25 °C - 40 60
T
= 125 °C - 70 105
J
= 25 °C - 280 -
T
J
T
= 125 °C - 235 -
J
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device Case style D-PAK HFA04SD60S
T
, T
J
Stg
--5.0
R
thJC
R
thJA
Typical socket mount - - 80
Vishay Semiconductors
-2842
- 55 - 150 °C
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
nsT
A
nC
A/μs
°C/W
kgf · cm
(lbf in)
Revision: 14-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
2
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Document Number: 94034
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SPbF
1
10
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
0 62 3
VF - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
14
0.1
5
10
100
1 10 100 1000
1
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
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1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0 100 200
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Vishay Semiconductors
TJ = 150 °C
T
= 125 °C
J
TJ = 25 °C
300 500
VR - Reverse Voltage (V)
Reverse Voltage
400
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 14-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
3
thJC
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Characteristics
Document Number: 94034
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