Vishay VS-GT50TP60N User Manual
www.vishay.com
New INT-A-PAK
Half Bridge IGBT Power Module, 600 V, 50 A
PRODUCT SUMMARY
V
CES
at TC = 80 °C 50 A
I
C
(typical)
V
CE(sat)
at I
= 50 A, 25 °C
C
600 V
1.65 V
Preliminary
FEATURES
•Low V
• 5 μs short circuit capability
•V
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Compliant to RoHS Directive 2002/95/EC
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
VS-GT50TP60N
Vishay Semiconductors
trench IGBT technology
CE(sat)
with positive temperature coefficient
CE(sat)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Gate to emitter voltage V
Collector current I
Pulsed collector current I
Diode continuous forward current I
Diode maximum forward current I
Maximum power dissipation P
RMS isolation voltage V
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
CM
FM
CES
GES
C
F
ISOL
TC = 25 °C 85
T
= 80 °C 50
C
(1)
(1)
D
tp = 1 ms 100
TC = 80 °C 50
tp = 1 ms 100
TJ = 175 °C 208 W
f = 50 Hz, t = 1 min 4000 V
600
± 20
V
A
Revision: 22-Dec-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94666
Preliminary
VS-GT50TP60N
www.vishay.com
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
TJ = 25 °C 600 - -
VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.65 2.10
Gate to emitter threshold voltage V
Collector cut-off current I
Gate to emitter leakage current I
CE(sat)
GE(th)
CES
GES
V
= 15 V, IC = 50 A, TJ = 175 °C - 2.05 -
GE
VCE = VGE, IC = 1.4 mA, TJ = 25 °C 4.0 4.9 6.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C - - 1.0 mA
CES
, VCE = 0 V, TJ = 25 °C - - 400 nA
GES
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
SC data I
Stray inductance L
Module lead resistance, terminal to chip R
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
V
= ± 15 V, TJ = 25 °C
GE
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 5 μs, VGE = 15 V, TJ = 125 °C,
V
= 360 V, V
CC
CEM
600 V
Vishay Semiconductors
VCollector to emitter saturation voltage V
-58-
-31-
-80-
- 100 -
-0.41-
-0.42-
-64-
-37-
-90-
- 117 -
-0.69-
-0.69-
-3.03-
-0.25-
-0.09-
- 450 - A
- - 30 nH
-0.75- m
ns
mJ
ns
mJ
nFOutput capacitance C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 25 °C - 1.35 1.75
T
Forward voltage V
Reverse recovery charge Q
F
rr
IF = 50 A
IF = 50 A, VR = 300 V,
R
Peak reverse recovery current I
Reverse recovery energy E
rr
rec
Revision: 22-Dec-11
For technical questions within your region: DiodesAmericas@vishay.com
= 3.3
G
V
GE
2
= - 15 V
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
T
= 125 °C - 1.37 -
J
= 25 °C - 2.3 -
T
J
T
= 125 °C - 4.3 -
J
TJ = 25 °C - 33 -
T
= 125 °C - 58 -
J
TJ = 25 °C - 0.56 -
T
= 125 °C - 1.11 -
J
Document Number: 94666
V
μC
A
mJ
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