Vishay VS-GT50TP60N User Manual

www.vishay.com

New INT-A-PAK

Half Bridge IGBT Power Module, 600 V, 50 A

PRODUCT SUMMARY

V

CES

at TC = 80 °C 50 A

I

C

(typical)

V

CE(sat)

at I

= 50 A, 25 °C

C

600 V

1.65 V

Preliminary

FEATURES

•Low V

• 5 μs short circuit capability

•V

• Maximum junction temperature 175 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Compliant to RoHS Directive 2002/95/EC

TYPICAL APPLICATIONS

• UPS (Uninterruptable Power Supply)

• Electronic welders

• Switching mode power supplies

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.

VS-GT50TP60N

Vishay Semiconductors

trench IGBT technology

CE(sat)

with positive temperature coefficient

CE(sat)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

ISOL

TC = 25 °C 85

T

= 80 °C 50

C

(1)

(1)

D

tp = 1 ms 100

TC = 80 °C 50

tp = 1 ms 100

TJ = 175 °C 208 W

f = 50 Hz, t = 1 min 4000 V

600

± 20

V

A

Revision: 22-Dec-11

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Preliminary

VS-GT50TP60N

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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 600 - -

VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.65 2.10

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(sat)

GE(th)

CES

GES

V

= 15 V, IC = 50 A, TJ = 175 °C - 2.05 -

GE

VCE = VGE, IC = 1.4 mA, TJ = 25 °C 4.0 4.9 6.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 1.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 300 V, IC = 50 A, Rg = 3.3 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 300 V, IC = 50 A, Rg = 3.3 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  5 μs, VGE = 15 V, TJ = 125 °C,
V

= 360 V, V

CC

CEM

 600 V

Vishay Semiconductors

VCollector to emitter saturation voltage V

-58-

-31-

-80-

- 100 -

-0.41-

-0.42-

-64-

-37-

-90-

- 117 -

-0.69-

-0.69-

-3.03-

-0.25-

-0.09-

- 450 - A

- - 30 nH

-0.75- m

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.35 1.75

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 50 A

IF = 50 A, VR = 300 V,
R

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 22-Dec-11

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= 3.3 

G

V

GE

2

= - 15 V

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J

T

= 125 °C - 1.37 -

J

= 25 °C - 2.3 -

T

J

T

= 125 °C - 4.3 -

J

TJ = 25 °C - 33 -

T

= 125 °C - 58 -

J

TJ = 25 °C - 0.56 -

T

= 125 °C - 1.11 -

J

Document Number: 94666

V

μC

A

mJ

Preliminary

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3 3.5

25 °C

175 °C

VGE = 15 V

VCE (V)

I

C

(A)

VGE (V)

I

C

(A)

0

10

20

30

40

50

60

70

80

90

100

4567891011

175 °C

25 °C

VCE (V) = 50 V

RG (Ω)

E (mJ)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35

VGE = ± 15 V
T

J

= 125 °C

I

C

= 50 A

V

CC

= 300 V

E

on

E

off

VS-GT50TP60N

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction temperature range T

Storage temperature range T

Junction to case

IGBT

per ½ module

Case to sink (Conductive grease applied) R

Mounting torque

Weight Weight of module - 150 - g

J

Stg

R

thJC

thCS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

1.8
V

CC

1.6
R

G

VGE = ± 15 V

1.4

T

J

0

0 102030405060708090100

E (mJ)

1.2

1.0

0.8

0.6

0.4

0.2

Vishay Semiconductors

- - 175 °C

- 40 - 125 °C

- - 0.72

-0.05-

= 300 V

= 3.3 Ω

= 125 °C

E

off

E

on

IC (A)

K/WDiode - - 1.02

Nm

Fig. 1 - IGBT Typical Output Characteristics

Revision: 22-Dec-11

Fig. 2 - IGBT Transfer Characteristics

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Fig. 3 - IGBT Switching Loss vs. I

Fig. 4 - IGBT Switching Loss vs. R

3

Document Number: 94666

C

G

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Z

thJC

(K/W)

t (s)

0.01

0.1

1

0.001 0.01 0.1 1 10

IGBT

i:

1 2 3 4

r

i

[K/W]: 0.0432 0.2376 0.2304 0.2088
[s]: 0.01 0.02 0.05 0.1

i

τ

VF (V)

I

F

(A)

0

10

20

30

40

50

60

70

80

90

100

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

25 °C

125 °C

IF (A)

E (mJ)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0 102030405060708090100

VGE = - 15 V

T

J

= 125 °C

R

G

= 3.3 Ω

V

CC

= 300 V

E

rec

(A)

C

I

Preliminary

120

100

80

60

40

R

= 3.3 Ω

G

20

VGE = ± 15 V

= 125 °C

T

J

0

0 100 200 300 400 500 600 700

Fig. 5 - RBSOA

Module

VCE (V)

VS-GT50TP60N

Vishay Semiconductors

Fig. 6 - IGBT Transient Thermal Impedance

Revision: 22-Dec-11

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Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

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RG (Ω)

E (mJ)

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0 5 10 15 20 25 30 35

E

rec

V

GE

= - 15 V

T

J

= 125 °C

I

F

= 50 A

V

CC

= 300 V

t (s)

Z

thJC

(K/W)

0.01

0.1

1

10

0.001 0.01 0.1

1

10

Diode

i:

1 2 3 4

r

i

i

[s]: 0.01 0.02 0.05 0.1

[K/W]: 0.0612 0.3366 0.3264 0.2958

τ

1

6
7

3

2

5
4

Preliminary

VS-GT50TP60N

Vishay Semiconductors

CIRCUIT CONFIGURATION

Fig. 9 - Diode Switching Loss vs. R

G

Fig. 10 - Diode Transient Thermal Impedance

Revision: 22-Dec-11

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23.5

30.58

6.92

13.64 13 13.64

18.97 18.98

22.2

31.4

7.2

40

80

94.1

23 23

17

123

6

4.5 17

34

12.5

4.5

754

3 - M5.0

2 - Ø 6.4

DIMENSIONS in millimeters

Preliminary

VS-GT50TP60N

Vishay Semiconductors

Revision: 22-Dec-11

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Document Number: 94666

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