Vishay VS-GT50TP60N Data Sheet
www.vishay.com
INT-A-PAK
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 50 A
FEATURES
•Low V
• 5 μs short circuit capability
•V
CE(on)
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
trench IGBT technology
CE(on)
with positive temperature coefficient
VS-GT50TP60N
PRODUCT SUMMARY
V
CES
I
at TC = 80 °C 50 A
C
V
(typical)
CE(on)
at I
= 50 A, 25 °C
C
Speed 8 kHz to 30 kHz
Package INT-A-PAK
Circuit Half bridge
600 V
1.65 V
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Gate to emitter voltage V
Collector current I
Pulsed collector current I
Diode continuous forward current I
Diode maximum forward current I
Maximum power dissipation P
Short circuit withstand time t
RMS isolation voltage V
CM
FM
CES
GES
C
F
SC
ISOL
TC = 25 °C 85
T
= 80 °C 50
(1)
C
tp = 1 ms 100
TC = 80 °C 50
(1)
D
tp = 1 ms 100
TJ = 175 °C 208 W
TC = 125 °C 5 μs
f = 50 Hz, t = 1 min 4000 V
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
600
± 20
V
A
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate to emitter threshold voltage V
Collector cut-off current I
Gate to emitter leakage current I
(BR)CES
CE(on)
GE(th)
CES
GES
Revision: 11-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TJ = 25 °C 600 - -
VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.65 2.10
V
= 15 V, IC = 50 A, TJ = 175 °C - 2.05 -
GE
VCE = VGE, IC = 1.4 mA, TJ = 25 °C 4.0 4.9 6.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C - - 1.0 mA
CES
, VCE = 0 V, TJ = 25 °C - - 400 nA
GES
1
Document Number: 94666
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
VCollector to emitter voltage V
VS-GT50TP60N
www.vishay.com
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
SC data I
Stray inductance L
Module lead resistance, terminal to chip R
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
V
= ± 15 V, TJ = 25 °C
GE
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 5 μs, VGE = 15 V, TJ = 125 °C,
V
= 360 V, V
CC
CEM
600 V
Vishay Semiconductors
-58-
-31-
-80-
- 100 -
-0.41-
-0.42-
-64-
-37-
-90-
- 117 -
-0.69-
-0.69-
-3.03-
-0.25-
-0.09-
- 450 - A
- - 30 nH
-0.75- m
ns
mJ
ns
mJ
nFOutput capacitance C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
T
= 25 °C - 1.35 1.75
Forward voltage V
Reverse recovery charge Q
Peak reverse recovery current I
Reverse recovery energy E
rr
rec
F
rr
IF = 50 A
IF = 50 A, VR = 300 V,
R
= 3.3
G
V
= -15 V
GE
J
= 125 °C - 1.37 -
T
J
T
= 25 °C - 2.3 -
J
= 125 °C - 4.3 -
T
J
TJ = 25 °C - 33 -
= 125 °C - 58 -
T
J
TJ = 25 °C - 0.56 -
= 125 °C - 1.11 -
T
J
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature range T
Storage temperature range T
Junction to case
IGBT
per ½ module
Case to sink (Conductive grease applied) R
Mounting torque
J
Stg
R
thJC
thCS
Power terminal screw: M5 2.5 to 5.0
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
- - 175 °C
-40 - 125 °C
- - 0.72
K/WDiode - - 1.02
-0.05-
Nm
Revision: 11-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94666
www.vishay.com
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5
25 °C
175 °C
VGE = 15 V
VCE (V)
I
C
(A)
E (mJ)
IC (A)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 102030405060708090100
VGE = ± 15 V
T
J
= 125 °C
R
G
= 3.3 Ω
V
CC
= 300 V
E
on
E
off
VGE (V)
I
C
(A)
0
10
20
30
40
50
60
70
80
90
100
4567891011
175 °C
25 °C
VCE (V) = 50 V
RG (Ω)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 5 10 15 20 25 30 35
VGE = ± 15 V
T
J
= 125 °C
I
C
= 50 A
V
CC
= 300 V
E
on
E
off
VCE (V)
I
C
(A)
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700
Module
VGE = ± 15 V
T
J
= 125 °C
R
G
= 3.3 Ω
VS-GT50TP60N
Vishay Semiconductors
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
Fig. 4 - IGBT Switching Loss vs. R
C
G
Revision: 11-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - RBSOA
3
Document Number: 94666
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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