Vishay VS-GT50TP120N Data Sheet

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INT-A-PAK

Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A

FEATURES

•Low V

• Low switching losses

• 10 μs short circuit capability

•V

CE(on)

• Maximum junction temperature 175 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

trench IGBT technology

CE(on)

with positive temperature coefficient

VS-GT50TP120N

Vishay Semiconductors



PRODUCT SUMMARY

V

CES

I

at TC = 80 °C 50 A

C

V

(typical)

CE(on)

at I

= 50 A, 25 °C

C

Speed 8 kHz to 30 kHz

Package INT-A-PAK

Circuit Half bridge

1200 V

1.65 V

TYPICAL APPLICATIONS

• UPS (Uninterruptable Power Supply)

• Electronic welders

• Switching mode power supplies

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

RMS isolation voltage V

Note

(1)

Repetitive rating: pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

ISOL

TC = 25 °C 100

T

= 80 °C 50

(1)

(1)

D

C

tp = 1 ms 100

TJ = 175 °C 405 W

f = 50 Hz, t = 1 min 2500 V

1200

± 20

50

100

V

A

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

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(BR)CES

CE(on)

GE(th)

CES

GES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.90 2.35

V

= 15 V, IC = 50 A, TJ = 175 °C - 2.50 -

GE

VCE = VGE, IC = 1.4 mA, TJ = 25 °C 5.0 5.5 7.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

1

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Document Number: 94824

VCollector to emitter voltage V

VS-GT50TP120N

www.vishay.com

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 600 V, IC = 50 A, Rg = 15 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 50 A, Rg = 15 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  10 μs, VGE = 15 V, TJ = 125 °C, 
V

= 600 V, V

CC

CEM

 1200 V

Vishay Semiconductors

- 148 -

-84-

- 245 -

- 251 -

-5.51-

-2.70-

- 263 -

-81-

- 256 -

- 292 -

-6.63-

-3.25-

-6.24-

-0.23-

-0.15-

- 450 - A

- - 30 nH

-0.75- m

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.85 2.25

T

Forward voltage V

Reverse recovery charge Q

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

F

rr

IF = 50 A

IF = 50 A, VR = 600 V,
dI

/dt = -654 A/μs

F

V

= -15 V

GE

J

T

= 125 °C - 1.95 -

J

= 25 °C - 3.1 -

T

J

T

= 125 °C - 6.1 -

J

TJ = 25 °C - 24 -

T

= 125 °C - 31 -

J

TJ = 25 °C - 0.98 -

T

= 125 °C - 2.06 -

J

V

μC

A

mJ

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature T

Storage temperature range T

Junction to case

IGBT

Case to sink (Conductive grease applied) R

Mounting torque

J

Stg

R

thJC

thCS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

Weight Weight of module - 150 - g

- - 175 °C

-40 - 125 °C

- - 0.37

K/WDiode - - 0.49

-0.05-

Nm

Revision: 11-Jun-15

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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25 °C

(A)

025 7550 100

IC (A)

E (mJ)

0

2

4

6

8

10

12

14

16

18

20

VGE = ± 15 V

T

J

= 125 °C

R

g

=15 Ω

V

CC

= 600 V

E

off

E

on

C

I

www.vishay.com

100

VGE = 15 V

90

80

70

60

50

40

30

20

10

0

01 234

175 °C

VCE (V)

VS-GT50TP120N

Vishay Semiconductors

(A)

C

I

Fig. 1 - IGBT Typical Output Characteristics

100

VCE = 50 V

90

80

70

60

50

40

30

20

10

0

02 64 8 10 12

175 °C

VGE (V)

Fig. 2 - IGBT Transfer Characteristics

25 °C

120

100

80

(mJ)
E

Module

Fig. 3 - IGBT Switching Loss vs. I

20

V

= 600 V

CC

18

I

= 50 A

C

VGE = ± 15 V

16

=

125 °C

T

J

14

12

10

8

6

4

2

0

010 3020 40 50 60

E

on

E

off

Rg (Ω)

Fig. 4 - IGBT Switching Loss vs. R

Chip

C

G

Revision: 11-Jun-15

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

(A)

C

I

60

40

R

= 15 Ω

g

20

VGE = ± 15 V

= 125 °C

T

J

0

0 350 700 1050 1400

VCE (V)

Fig. 5 - RBSOA

3

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Document Number: 94824

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t (s)

Z

thJC

(K/W)

10

0

10

-1

10

-2

10

-3

10

-0

10

1

10

-1

10

-2

10

-3

IGBT

30

20

10

0

40

50

60

70

80

90

100

01 23

VF (V)

I

F

(A)

25 °C

125 °C

E (mJ)

0

0.5

1

1.5

2

2.5

3

0102030405060

VGE = - 15 V
T

J

=

125 °C

I

F

= 50 A

V

CC

= 600 V

E

rec

Rg (Ω)

Fig. 6 - IGBT Transient Thermal Impedance

3.5
V

CC

R

3

g

VGE = - 15 V

T

2.5

= 600 V

= 15 Ω

= 125 °C

J

VS-GT50TP120N

Vishay Semiconductors

Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

Revision: 11-Jun-15

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 9 - Diode Switching Loss vs. R

E (mJ)

2

1.5

E

rec

1

0.5

0

0255075100

IF (A)

F

G

4

Document Number: 94824

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1

6
7

3

2

5
4

0

10

-1

10

(K/W)

thJC

Z

-2

10

-3

10

CIRCUIT CONFIGURATION

Diode

-2

10

-1

10

t (s)

Fig. 10 - Diode Transient Thermal Impedance

VS-GT50TP120N

Vishay Semiconductors

0

10

1

10

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95524

Revision: 11-Jun-15

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay

Disclaimer



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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16

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