Vishay VS-GT50TP120N Data Sheet
www.vishay.com
INT-A-PAK
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
FEATURES
•Low V
• Low switching losses
• 10 μs short circuit capability
•V
CE(on)
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
trench IGBT technology
CE(on)
with positive temperature coefficient
VS-GT50TP120N
Vishay Semiconductors
PRODUCT SUMMARY
V
CES
I
at TC = 80 °C 50 A
C
V
(typical)
CE(on)
at I
= 50 A, 25 °C
C
Speed 8 kHz to 30 kHz
Package INT-A-PAK
Circuit Half bridge
1200 V
1.65 V
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Gate to emitter voltage V
Collector current I
Pulsed collector current I
Diode continuous forward current I
Diode maximum forward current I
Maximum power dissipation P
RMS isolation voltage V
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature.
CM
FM
CES
GES
C
F
ISOL
TC = 25 °C 100
T
= 80 °C 50
(1)
(1)
D
C
tp = 1 ms 100
TJ = 175 °C 405 W
f = 50 Hz, t = 1 min 2500 V
1200
± 20
50
100
V
A
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate to emitter threshold voltage V
Collector cut-off current I
Gate to emitter leakage current I
Revision: 11-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
(BR)CES
CE(on)
GE(th)
CES
GES
TJ = 25 °C 1200 - -
VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.90 2.35
V
= 15 V, IC = 50 A, TJ = 175 °C - 2.50 -
GE
VCE = VGE, IC = 1.4 mA, TJ = 25 °C 5.0 5.5 7.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C - - 5.0 mA
CES
, VCE = 0 V, TJ = 25 °C - - 400 nA
GES
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94824
VCollector to emitter voltage V
VS-GT50TP120N
www.vishay.com
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
SC data I
Stray inductance L
Module lead resistance, terminal to chip R
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 600 V, IC = 50 A, Rg = 15 ,
V
= ± 15 V, TJ = 25 °C
GE
VCC = 600 V, IC = 50 A, Rg = 15 ,
V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 10 μs, VGE = 15 V, TJ = 125 °C,
V
= 600 V, V
CC
CEM
1200 V
Vishay Semiconductors
- 148 -
-84-
- 245 -
- 251 -
-5.51-
-2.70-
- 263 -
-81-
- 256 -
- 292 -
-6.63-
-3.25-
-6.24-
-0.23-
-0.15-
- 450 - A
- - 30 nH
-0.75- m
ns
mJ
ns
mJ
nFOutput capacitance C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 25 °C - 1.85 2.25
T
Forward voltage V
Reverse recovery charge Q
Peak reverse recovery current I
Reverse recovery energy E
rr
rec
F
rr
IF = 50 A
IF = 50 A, VR = 600 V,
dI
/dt = -654 A/μs
F
V
= -15 V
GE
J
T
= 125 °C - 1.95 -
J
= 25 °C - 3.1 -
T
J
T
= 125 °C - 6.1 -
J
TJ = 25 °C - 24 -
T
= 125 °C - 31 -
J
TJ = 25 °C - 0.98 -
T
= 125 °C - 2.06 -
J
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature T
Storage temperature range T
Junction to case
IGBT
Case to sink (Conductive grease applied) R
Mounting torque
J
Stg
R
thJC
thCS
Power terminal screw: M5 2.5 to 5.0
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
- - 175 °C
-40 - 125 °C
- - 0.37
K/WDiode - - 0.49
-0.05-
Nm
Revision: 11-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94824
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