Vishay VS-GT300YH120N Data Sheet
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Double INT-A-PAK
DIAP Trench IGBT Power Module - 1200 V, 300 A
Current Fed Inverter Topology
PRODUCT SUMMARY
IGBT
V
CES
V
(typical) at 300 A, 25 °C 2.17 V
CE(on)
I
at TC = 48 °C 300 A
D(DC)
HEXFRED
V
R
V
(typical) at 300 A, 25 °C 1.99 V
F
I
at 49 °C 300 A
F(DC)
IGBT AND HEXFRED
V
+ VF typical at 300 A 4.12 V
CE(on)
HEXFRED
V
(typical) at 10 A, 25 °C 1.6 V
F
I
at 63 °C 40 A
F(DC)
Speed 8 kHz to 30 kHz
Package Double INT-A-PAK
Circuit Current fed inverter topology
®
SERIES DIODE
®
SERIES DIODE
®
ANTIPARALLEL DIODE
1200 V
1200 V
VS-GT300YH120N
Vishay Semiconductors
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Low switching losses
• Maximum junction temperature 150 °C
• 10 μs short circuit capability
• Low inductance case
•HEXFRED
recovery
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Direct mounting to heatsink
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Short circuit ruggedness
®
antiparallel and series diodes with soft reverse
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
IGBT
Collector to emitter voltage V
Collector current I
Clamped inductive load current I
Gate to emitter voltage V
Maximum power dissipation P
SERIES DIODE
Cathode to anode breakdown voltage V
Continuous forward current I
Peak repetitive forward current I
Maximum power dissipation P
Revision: 12-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CES
C
LM
GE
D
RRM
F
FSM
D
TC = 80 °C 234
= 25 °C 341
C
TC = 80 °C 583
T
= 25 °C 1042
C
TC = 80 °C 232
T
= 25 °C 348
C
TC = 25 °C 2200 A
TC = 80 °C 438
T
= 25 °C 781
C
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1200 V
700
± 30 V
1200
Document Number: 94681
AT
W
A
W
VS-GT300YH120N
www.vishay.com
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
ANTPARALLEL DIODE
Continuous forward current I
Peak repetitive forward current I
Maximum power dissipation P
F
FSM
(1)
D
TC = 80 °C 36
T
= 25 °C 51
C
TC = 80 °C 77
T
= 25 °C 137
C
MODULE
RMS isolation voltage V
Junction temperature range T
Storage temperature range T
ISOL
J
STG
f = 50 Hz, t = 1 minute 4000 V
Note
(1)
Max. RMS current admitted for the terminals 10 A
ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IGBT
Collector to emitter breakdown voltage V
(BR)CES
Gate to emitter threshold voltage V
Collector to emitter leakage current I
Gate to emitter leakage current I
SERIES DIODE
Cathode to anode breakdown voltage V
Cathode to anode leakage current I
Forward voltage V
ANTIPARALLEL DIODE
Forward voltage V
®
IGBT AND HEXFRED
Collector to emitter saturation voltage +
Forward voltage
SERIES DIODE
V
CE(on)
CE(on)
GE(th)
CES
GES
R
R
F
F
+ VFIC = 300 A - 4.12 4.65 V
VGE = 0 V, IC = 0.5 mA, TJ = 25 °C 1200 - -
VGE = 15 V, IC = 300 A, TJ = 25 °C - 2.17 -
= 15 V, IC = 300 A, TJ = 125 °C - 2.4 -
V
GE
VCE = VGE, IC = 14 mA, TJ = 25 °C 4.7 5.6 7.8
VGE = 0 V, VCE = 1200 V - 0.003 0.3
V
= 0 V, VCE = 1200 V, TJ = 125 °C - 1.03 -
GE
VGE = ± 30 V - - 400 nA
IC = 1.0 mA, TJ = 125 °C 1200 - -
VR = 1200 V - 0.003 0.2
V
= 1200 V, TJ = 125 °C - 3.5 -
R
IF = 300 A - 1.99 -
I
= 300 A, TJ = 125 °C - 2.02 -
F
IF = 10 A - 1.6 -
I
= 10 A, TJ = 125 °C - 1.4 -
F
Vishay Semiconductors
A
n/a A
W
-40 to +150
-40 to +150
°C
VCollector to emitter saturation voltage V
mA
mA
V
V
Revision: 12-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94681
VS-GT300YH120N
www.vishay.com
SWITCHING CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IGBT
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
Reverse bias save operating area RBSOA
Short circuit save operating area SCSOA
SERIES DIODE
Diode reverse recovery charge Q
Reverse recovery time t
Reverse recovery current I
ANTIPARALLEL DIODE
Diode reverse recovery charge Q
Reverse recovery time t
on
off
d(on)
d(off)
on
off
ies
oes
res
rr
rr
rr
VCC = 600 V, IC = 300 A, Rg = 4.7 ,
V
= ± 15 V
GE
r
VCC = 600 V, IC = 300 A, Rg = 4.7 ,
= ± 15 V, TJ = 125 °C
V
f
GE
VCE = 30 V, f = 1.0 MHz
= 150 °C, Rg = 22 ,
T
J
V
= 15 V to 0 V, VCC = 600 V,
GE
V
= 1200 V, IC = 700 A
P
= 150 °C, Rg = 22 ,
T
J
V
= 15 V to 0 V, VCC = 600 V,
GE
V
= 1200 V
P
T
rr
IF = 50 A,
V
= 400 V,
R
dI/dt = -500 A/μs
T
TJ = 25 °C - 230 -
T
TJ = 25 °C - 26 -
T
T
rr
IF = 10 A,
V
= 400 V,
R
dI/dt = 500 A/μs
T
TJ = 25 °C - 175 -
T
Vishay Semiconductors
- 35.2 -
- 26.3 -
- 776 -
- 263 -
- 816 -
- 131 -
- 36.1 -
- 32.1 -
-36-
-1.4-
-1.0-
---
- - 10 μs
= 25 °C - 3.0 -
J
= 125 °C - 8.0 -
J
= 125 °C - 370 -
J
= 125 °C - 43 -
J
= 25 °C - 2.1 -
J
= 125 °C - 3.4 -
J
= 125 °C - 241 -
J
mJ
ns
mJ
nFOutput capacitance C
μC
nS
A
μC
ns
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case
per ½ module
Series Diode - - 0.16
R
thJC
Antiparallel Diode - - 0.91
IGBT
Case to sink R
Mounting torque
thCS
Conductive grease applied - 0.035 -
Power terminal screw: M6 2.5 to 5.0
Mounting screw: M6 3.0 to 5.0
Weight 300 g
Revision: 12-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
- - 0.12
Document Number: 94681
°C/W
Nm
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