Vishay VS-GT100TP060N User Manual

Preliminary

New INT-A-PAK

VS-GT100TP060N

www.vishay.com

Vishay Semiconductors

Half Bridge IGBT Power Module, 600 V, 100 A

FEATURES

•Low V

• 5 μs short circuit capability

•V

CE(sat)

• Maximum junction temperature 175 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Compliant to RoHS Directive 2002/95/EC

trench IGBT technology

CE(sat)

with positive temperature coefficient

PRODUCT SUMMARY

V

CES

at TC = 80 °C 100 A

I

C

(typical)

V

CE(on)

at I

= 100 A, 25 °C

C

600 V

1.65 V

TYPICAL APPLICATIONS

• UPS (Uninterruptable Power Supply)

• Switching mode power supplies

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

ISOL

TC = 25 °C 160

T

= 80 °C 100

C

(1)

(1)

D

tp = 1 ms 200

TC = 80 °C 100

tp = 1 ms 200

TJ = 175 °C 417 W

f = 50 Hz, t = 1 min 4000 V

600

± 20

V

A

Revision: 13-Dec-11

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Document Number: 93799

Preliminary

VS-GT100TP060N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 600 - -

VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.65 2.10

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(sat)

GE(th)

CES

GES

V

= 15 V, IC = 100 A, TJ = 175 °C - 2.00 -

GE

VCE = VGE, IC = 1.0 mA, TJ = 25 °C 4.0 4.4 6.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 300 V, IC = 100 A, Rg = 2.2 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 300 V, IC = 100 A, Rg = 2.2 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  5 μs, VGE = 15 V, TJ = 125 °C,
V

= 360 V, V

CC

CEM

 1200 V

Vishay Semiconductors

VCollector to emitter saturation voltage V

- 106 -

-49-

- 102 -

-85-

-0.46-

-0.95-

- 112 -

-62-

- 126 -

- 109 -

-0.78-

-1.73-

-7.71-

-0.53-

-0.23-

- 900 - A

- - 30 nH

-0.75- m

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.40 1.80

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 100 A

IF = 100 A, VR = 600 V,
R

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 13-Dec-11

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= 5.6 

G

V

GE

2

= - 15 V

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J

T

= 125 °C - 1.40 -

J

= 25 °C - 5.5 -

T

J

T

= 125 °C - 7.3 -

J

TJ = 25 °C - 68 -

T

= 125 °C - 88 -

J

TJ = 25 °C - 0.89 -

T

= 125 °C - 1.71 -

J

Document Number: 93799

V

μC

A

mJ

Preliminary

I

C

(A)

VCE (V)

0

25

50

75

100

125

150

175

200

0 0.5 1 1.5 2 2.5 3 3.5

175 °C

25 °C

VGE = 15 V

0

25

50

75

100

125

150

175

200

45678910

25 °C

175 °C

VCE = 50 V

VGE (V)

I

C

(A)
E (mJ)

Rg (Ω)

E

on

E

off

0

1

2

3

4

5

6

7

0 1020304050

V

CC = 300 V

I

C

= 100 A

V

GE

= ± 15 V

T

J

= 125 °C

VS-GT100TP060N

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction temperature T

Storage temperature range T

Junction to case

IGBT

Case to sink (Conductive grease applied) R

Mounting torque

Weight - 150 - g

R

J

Stg

thJC

thCS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

5

V

CC = 300 V

4.5
R

= 2.2 Ω

G

4

V

GE

= 125 °C

T

3.5

J

3

2.5

E (mJ)

2

1.5

1

0.5

0

0 50 100 150 200

Vishay Semiconductors

- - 175

- 40 - 125

- - 0.36

-0.05-

= ± 15 V

E

ON

E

OFF

IC (A)

°C

K/WDiode - - 0.57

Nm

Fig. 1 - IGBT Typical Output Characteristics

Revision: 13-Dec-11

Fig. 2 - IGBT Transfer Characteristics

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Fig. 3 - IGBT Switching Loss vs. I

Fig. 4 - IGBT Switching Loss vs. R

3

Document Number: 93799

C

G

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0.01

0.1

1

0.001 0.01 0.1 1 10

t (s)

Z

thJC

(K/W)

IGBT

(A)

C

I

Preliminary

250

200

150

100

RG = 2.2 Ω

= ± 15 V

V

50

GE

= 125 °C

T

J

0

0100 300200 400 500 700600

VCE (V)

Fig. 5 - RBSOA

Module

VS-GT100TP060N

Vishay Semiconductors

Fig. 6 - IGBT Transient Thermal Impedance

200

175

150

125

100

(A)

F

I

75

50

25

0

0 0.5 1 1.5 2

125 °C

25 °C

2.5

1.5

E (mJ)

0.5

VF (V)

Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

Revision: 13-Dec-11

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V

CC = 300 V

= 2.2 Ω

R

G

2

1

0

= - 15 V

V

GE

= 125 °C

T

J

E

REC

0 50 100 150 200

IF (A)

Document Number: 93799

F

www.vishay.com

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

0 1020304050

E (mJ)

R

G

(Ω)

E

REC

VCC = 300 V
I

F

= 100 A

V

GE

= - 15 V

T

J

= 125 °C

1

6
7

3

2

5
4

Preliminary

VS-GT100TP060N

Vishay Semiconductors

1

(K/W)

0.1

thJC

Z

0.01

0.001 0.01 0.1 1 10

CIRCUIT CONFIGURATION

Fig. 9 - Diode Switching Loss vs. R

Diode

G

t (s)

Fig. 10 - Forward Characteristics of Diode

Revision: 13-Dec-11

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DIMENSIONS in millimeters

40

4.5

17

23 23

Preliminary

VS-GT100TP060N

Vishay Semiconductors

3 - M5.0

12.5

754

6

4.5 17

18.97 18.98

6.92

23.5

13.64 13 13.64

80

94.1

123

34

2 - Ø 6.4

22.2

30.58

7.2

31.4

Revision: 13-Dec-11

For technical questions within your region: [e-mail]

6

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Document Number: 93799

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000