Vishay VS-GB90DA60U Data Sheet
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SOT-227
Insulated Gate Bipolar Transistor
PRODUCT SUMMARY
V
CES
DC 90 A at 90 °C
I
C
V
typical at 100 A, 25 °C 2.40 V
CE(on)
I
DC 108 A at 90 °C
F
Speed 8 kHz to 30 kHz
Package SOT-227
Circuit Single switch diode
(Warp 2 Speed IGBT), 90 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
®
anti-parallel diodes with ultrasoft
600 V
•HEXFRED
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
VS-GB90DA60U
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate-to-emitter voltage V
Power dissipation, IGBT P
Power dissipation, diode P
Isolation voltage V
Revision: 20-May-16
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CES
C
CM
LM
F
GE
D
D
ISOL
TC = 25 °C 147
T
= 90 °C 90
C
TC = 25 °C 180
T
= 90 °C 108
C
TC = 25 °C 625
= 90 °C 300
T
C
TC = 25 °C 379
T
= 90 °C 182
C
Any terminal to case, t = 1 min 2500 V
1
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600 V
300
300
± 20 V
Document Number: 94771
A
W
VS-GB90DA60U
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
Collector to emitter voltage V
Gate threshold voltage V
Temperature coefficient of threshold
voltage
Collector to emitter leakage current I
Forward voltage drop, diode V
Gate to emitter leakage current I
V
BR(CES)
VGE = 0 V, IC = 250 μA 600 - -
VGE = 15 V, IC = 100 A - 2.4 2.8
V
CE(on)
GE(th)
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10 - mV/°C
V
GE(th)
= 15 V, IC = 100 A, TJ = 125 °C - 3 3.4
GE
V
= 15 V, IC = 100 A, TJ = 150°C - 3.3 -
GE
VCE = VGE, IC = 250 μA 3 3.9 5.0
V
= VGE, IC = 250 μA, TJ = 125 °C - 2.5 -
CE
VGE = 0 V, VCE = 600 V - 7 100 μA
V
CES
= 0 V, VCE = 600 V, TJ = 125 °C - 1.5 6.0
GE
= 0 V, VCE = 600 V, TJ = 150 °C - 6 10
V
GE
IC = 100 A, VGE = 0 V - 1.6 2.1
FM
GES
= 100 A, VGE = 0 V, TJ = 125 °C - 1.56 2.0
C
I
= 100 A, VGE = 0 V, TJ = 150 °C - 1.53 -
C
VGE = ± 20 V - - ± 200 nA
Vishay Semiconductors
V
mA
VI
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
g
ge
gc
on
off
tot
d(on)
r
d(off)
f
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 100 A, VCC = 480 V, VGE = 15 V
IC = 100 A, VCC = 360 V,
V
= 15 V, Rg = 5
GE
L = 500 μH, T
= 25 °C
J
Energy losses
include tail and
diode
recovery.
Diode used
IC = 100 A, VCC = 360 V,
= 15 V, Rg = 5
V
GE
L = 500 μH, T
T
= 150 °C, IC = 300 A, Rg = 22
J
= 15 V to 0 V, VCC = 400 V,
V
GE
= 600 V, L = 500 μH
V
P
= 125 °C
J
60APH06
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
V
= 200 V, TJ = 125 °C
R
- 460 690
- 160 250
nCGate to emitter charge (turn-on) Q
- 70 130
-0.39-
-1.10-
mJTurn-off switching loss E
-1.49-
- 245 -
-53-
- 240 -
ns
-63-
-0.52-
-1.24-
mJTurn-off switching loss E
-1.76-
- 240 -
-54-
- 250 -
ns
-80-
Fullsquare
-95-ns
-10- A
- 480 - nC
- 144 - ns
-16- A
- 1136 - nC
Revision: 20-May-16
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94771
VS-GB90DA60U
IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
DC
V
CE -
Collector-to-Emitter Voltage (V)
I
C
-
Collector to Emitter Current (A)
0.0 1.0
2.0
3.0
4.0
5.0
6.0
0
200
100
50
150
250
300
VGE = 15V
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
IF - Continuous Forward Current (A)
Allowable Case Temperature (°C)
0 20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
160
VF - Forward Voltage Drop (V)
I
F
- Forward Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
40
80
120
160
200
TJ = 25 °C
T
J
= 125 °C
T
J
= 150 °C
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
Junction to case
IGBT
Case to heatsink R
Weight -30- g
Mounting torque
Case style SOT-227
, T
J
Stg
R
thJC
thCS
Flat, greased surface - 0.1 -
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Vishay Semiconductors
-40 - 150 °C
- - 0.20
°C/WDiode - - 0.33
Fig. 1 - Maximum DC IGBT Collector Current vs.
Fig. 2 - Typical Collector to Emitter Voltage (V)
Revision: 20-May-16
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Maximum Allowable Forward Current vs.
Case Temperature
Case Temperature, Diode Leg
Fig. 4 - Typical Forward Voltage Drop Characteristics
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94771
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