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SOT-227
“Low Side Chopper” IGBT SOT-227
PRODUCT SUMMARY
V
CES
DC 50 A at 92 °C
I
C
V
typical at 50 A, 25 °C 3.3 V
CE(on)
Package SOT-227
Circuit Chopper low side switch
(Ultrafast IGBT), 50 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
•HEXFRED® clamping diode
•Positive V
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
1200 V
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
VS-GB55LA120UX
Vishay Semiconductors
temperature coefficient
CE(on)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Single pulse forward current I
Gate to emitter voltage V
Power dissipation, IGBT P
Power dissipation, diode P
RMS isolation voltage V
CES
C
CM
LM
F
FSM
GE
ISOL
TC = 25 °C 84
T
= 80 °C 57
C
TC = 25 °C 87
= 80 °C 59
T
C
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 310
D
D
TC = 25 °C 431
= 80 °C 242
T
C
TC = 25 °C 338
T
= 80 °C 190
C
Any terminal to case, t = 1 min 2500 V
1200 V
150
150
± 20 V
A
W
Revision: 20-May-16
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
V
GE(th)
Collector to emitter leakage current I
Diode reverse breakdown voltage V
Diode forward voltage drop V
Diode reverse leakage current I
Gate to emitter leakage current I
BR(CES)VGE
CE(on)
GE(th)
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12.9 - mV/°C
CES
BR
FM
RM
GES
= 0 V, IC = 500 μA 1200 - -
VGE = 15 V, IC = 25 A - 2.5 2.8
V
= 15 V, IC = 50 A - 3.3 -
GE
= 15 V, IC = 25 A, TJ = 125 °C - 3.0 -
V
GE
V
= 15 V, IC = 50 A, TJ = 125 °C - 4.03 -
GE
VCE = VGE, IC = 500 μA 4.0 5.5 7.1
VGE = 0 V, VCE = 1200 V - 8 50 μA
V
= 0 V, VCE = 1200 V, TJ = 125 °C - 0.15 - mA
GE
IR = 1 mA 1200 - - V
IF = 25 A, VGE = 0 V - 2.11 2.42
I
= 50 A, VGE = 0 V - 2.72 -
F
= 25 A, VGE = 0 V, TJ = 125 °C - 2.04 -
I
F
I
= 50 A, VGE = 0 V, TJ = 125 °C - 2.83 -
F
VR = 1200 V - 4 50 μA
T
= 125 °C, VR = 1200 V - 0.8 - mA
J
VGE = ± 20 V - - ± 200 nA
Vishay Semiconductors
VCollector to emitter voltage V
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
g
ge
gc
on
off
tot
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
= 15 V, Rg = 4.7
V
GE
L = 500 μH, T
= 25 °C
J
Energy losses
include tail and
IC = 50 A, VCC = 600 V,
V
= 15 V, Rg = 4.7
GE
L = 500 μH, T
= 150 °C, IC = 150 A, Rg = 22
T
J
V
= 15 V to 0 V, VCC = 900 V,
GE
V
= 1200 V
P
= 125 °C
J
diode recovery
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
V
= 200 V, TJ = 125 °C
R
- 400 -
-43-
nCGate to emitter charge (turn-on) Q
- 187 -
-1.87-
-0.83-
-2.7-
-3.43-
mJ
-1.29-
-4.72-
- 147 -
-35-
- 186 -
ns
- 119 -
Fullsquare
- 129 - ns
-11- A
- 710 - nC
- 208 - ns
-17- A
- 1768 - nC
Revision: 20-May-16
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Document Number: 95856
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
Junction to case
IGBT
Case to heatsink R
Weight -30- g
Mounting torque
Case style SOT-227
J
R
, T
thJC
thCS
Stg
Flat, greased surface - 0.05 -
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Vishay Semiconductors
-40 - 150 °C
- - 0.29
°C/WDiode - - 0.37
160
140
120
100
80
60
40
20
Allowable Case Temperature (°C)
0
0 102030405060708090
DC
IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
(A)
C
I
1
200
175
150
(A)
C
I
125
100
75
50
25
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
TJ= 25 °C
TJ= 125 °C
VCE(V)
Fig. 3 - Typical IGBT Output Characteristics, V
1
0.1
TJ= 125 °C
(mA)
0.01
CES
I
GE
= 15V
0.1
0.01
1 10 100 1000 10 000
0.001
0.0001
200 400 600 800 1000 1200
VCE (V)
Fig. 2 - IGBT Reverse Bias SOA
T
= 150 °C, VGE = 15 V
J
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Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
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TJ= 25 °C
V
CES
(V)
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1.5
2.5
3.5
4.5
5.5
6.5
7.5
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
GEth
(V)
IC(mA)
TJ= 25 °C
TJ= 125 °C
V
CE
(V)
TJ (°C)
10 50 9030 70 130110 150
2
6
4
5
3
100 A
50 A
25 A
0
25
50
75
100
125
150
175
200
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
I
F
(A)
VFM(V)
TJ= 25 °C
TJ= 125 °C
VS-GB55LA120UX
Vishay Semiconductors
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
160
140
120
100
80
60
40
20
Allowable Case Temperature (°C)
0
0 20406080100
IF- Continuous Forward Current (A)
Fig. 7 - Maximum Diode Continuous Forward Current vs.
Case Temperature
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= 15 V
GE
DC
Fig. 8 - Typical Diode Forward Characteristics
4.0
3.0
E
2.0
Energy (mJ)
1.0
0
10 20 30 40 50
on
E
off
IC(A)
Fig. 9 - Typical IGBT Energy Losses vs. I
TJ = 125 °C, VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7
1
t
0.1
d(on)
Switching Time (ns)
t
r
0.01
10 20 30 40 50
IC(A)
Fig. 10 - Typical IGBT Switching Time vs. I
TJ = 125 °C, VCC = 600 V, VGE = 15 V, L = 500 μH, Rg = 4.7
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t
d(off)
C
t
f
C
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0
5
10
15
20
25
30
35
40
100 1000
I
rr
(A)
dIF/dt (A/μs)
TJ= 25 °C
TJ= 125 °C
VS-GB55LA120UX
Vishay Semiconductors
8
7
6
5
E
on
4
3
Energy (mJ)
2
E
off
1
0
0 1020304050
Rg(Ω)
Fig. 11 - Typical IGBT Energy Losses vs. R
TJ = 125 °C, IC = 50 A, VCC = 600 V, VGE = 15 V, L = 500 μH
1000
t
d(off)
t
d(on)
100
t
f
g
(ns)
rr
t
270
250
230
210
190
170
150
130
110
90
70
TJ= 125 °C
TJ= 25 °C
100 1000
dIF/dt (A/μs)
Fig. 13 - Typical t
V
= 200 V, IF = 50 A
R
Diode vs. dIF/dt
rr
Switching Time (ns)
t
r
10
0 1020304050
Fig. 12 - Typical IGBT Switching Time vs. R
TJ = 125 °C, IC = 50 A, VCC = 600 V, VGE = 15 V, L = 500 μH
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Rg(Ω)
g
2650
2400
2150
1900
1650
(nC)
rr
1400
Q
1150
900
650
400
100 1000
TJ= 125 °C
TJ= 25 °C
Fig. 14 - Typical I
V
= 200 V, IF = 50 A
R
Diode vs. dIF/dt
rr
dIF/dt (A/μs)
Fig. 15 - Typical Q
V
= 200 V, IF = 50 A
R
Diode vs. dIF/dt,
rr
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0.001
0.1
0.01
1
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
101
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
VS-GB55LA120UX
Vishay Semiconductors
Fig. 16 - Maximum Thermal Impedance Z
Fig. 17 - Maximum Thermal Impedance Z
Characteristics (IGBT)
thJC
Characteristics (Diode)
thJC
Revision: 20-May-16
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- Insulated Gate Bipolar Transistor (IGBT)
- B = IGBT Generation 5
- Current rating (55 = 50 A)
- Circuit configuration (L = low side chopper)
- Package indicator (A = SOT-227)
- Voltage rating (120 = 1200 V)
- Diode (X = HEXFRED
®
diode)
- Speed/type (U = ultrafast IGBT)
Device code
G B 55 L A 120 U X
51 32 4 6 7 8
- Vishay Semiconductors product
9
VS-
2
3
4
5
6
8
9
7
1
2
4
1
3
ORDERING INFORMATION TABLE
VS-GB55LA120UX
Vishay Semiconductors
CIRCUIT CONFIGURATION
CIRCUIT
Low side chopper IGBT L
CONFIGURATION CODE
CIRCUIT
CIRCUIT DRAWING
Lead Assignment
4
1
3
2
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38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010)
CA B
4 x M4 nuts
DIMENSIONS in millimeters (inches)
VS-GB55LA120UX
Vishay Semiconductors
Note
• Controlling dimension: millimeter
PACKAGING INFORMATION
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Disclaimer
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