Vishay VS-GB55LA120UX Data Sheet
www.vishay.com
SOT-227
“Low Side Chopper” IGBT SOT-227
PRODUCT SUMMARY
V
CES
DC 50 A at 92 °C
I
C
V
typical at 50 A, 25 °C 3.3 V
CE(on)
Package SOT-227
Circuit Chopper low side switch
(Ultrafast IGBT), 50 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
•HEXFRED® clamping diode
•Positive V
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
1200 V
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
VS-GB55LA120UX
Vishay Semiconductors
temperature coefficient
CE(on)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Single pulse forward current I
Gate to emitter voltage V
Power dissipation, IGBT P
Power dissipation, diode P
RMS isolation voltage V
CES
C
CM
LM
F
FSM
GE
ISOL
TC = 25 °C 84
T
= 80 °C 57
C
TC = 25 °C 87
= 80 °C 59
T
C
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 310
D
D
TC = 25 °C 431
= 80 °C 242
T
C
TC = 25 °C 338
T
= 80 °C 190
C
Any terminal to case, t = 1 min 2500 V
1200 V
150
150
± 20 V
A
W
Revision: 20-May-16
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 95856
VS-GB55LA120UX
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Temperature coefficient of
threshold voltage
V
GE(th)
Collector to emitter leakage current I
Diode reverse breakdown voltage V
Diode forward voltage drop V
Diode reverse leakage current I
Gate to emitter leakage current I
BR(CES)VGE
CE(on)
GE(th)
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -12.9 - mV/°C
CES
BR
FM
RM
GES
= 0 V, IC = 500 μA 1200 - -
VGE = 15 V, IC = 25 A - 2.5 2.8
V
= 15 V, IC = 50 A - 3.3 -
GE
= 15 V, IC = 25 A, TJ = 125 °C - 3.0 -
V
GE
V
= 15 V, IC = 50 A, TJ = 125 °C - 4.03 -
GE
VCE = VGE, IC = 500 μA 4.0 5.5 7.1
VGE = 0 V, VCE = 1200 V - 8 50 μA
V
= 0 V, VCE = 1200 V, TJ = 125 °C - 0.15 - mA
GE
IR = 1 mA 1200 - - V
IF = 25 A, VGE = 0 V - 2.11 2.42
I
= 50 A, VGE = 0 V - 2.72 -
F
= 25 A, VGE = 0 V, TJ = 125 °C - 2.04 -
I
F
I
= 50 A, VGE = 0 V, TJ = 125 °C - 2.83 -
F
VR = 1200 V - 4 50 μA
T
= 125 °C, VR = 1200 V - 0.8 - mA
J
VGE = ± 20 V - - ± 200 nA
Vishay Semiconductors
VCollector to emitter voltage V
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
g
ge
gc
on
off
tot
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 50 A, VCC = 600 V, VGE = 15 V
IC = 50 A, VCC = 600 V,
= 15 V, Rg = 4.7
V
GE
L = 500 μH, T
= 25 °C
J
Energy losses
include tail and
IC = 50 A, VCC = 600 V,
V
= 15 V, Rg = 4.7
GE
L = 500 μH, T
= 150 °C, IC = 150 A, Rg = 22
T
J
V
= 15 V to 0 V, VCC = 900 V,
GE
V
= 1200 V
P
= 125 °C
J
diode recovery
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
V
= 200 V, TJ = 125 °C
R
- 400 -
-43-
nCGate to emitter charge (turn-on) Q
- 187 -
-1.87-
-0.83-
-2.7-
-3.43-
mJ
-1.29-
-4.72-
- 147 -
-35-
- 186 -
ns
- 119 -
Fullsquare
- 129 - ns
-11- A
- 710 - nC
- 208 - ns
-17- A
- 1768 - nC
Revision: 20-May-16
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 95856
VS-GB55LA120UX
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
Junction to case
IGBT
Case to heatsink R
Weight -30- g
Mounting torque
Case style SOT-227
J
R
, T
thJC
thCS
Stg
Flat, greased surface - 0.05 -
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Vishay Semiconductors
-40 - 150 °C
- - 0.29
°C/WDiode - - 0.37
160
140
120
100
80
60
40
20
Allowable Case Temperature (°C)
0
0 102030405060708090
DC
IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
1000
100
10
(A)
C
I
1
200
175
150
(A)
C
I
125
100
75
50
25
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
TJ= 25 °C
TJ= 125 °C
VCE(V)
Fig. 3 - Typical IGBT Output Characteristics, V
1
0.1
TJ= 125 °C
(mA)
0.01
CES
I
GE
= 15V
0.1
0.01
1 10 100 1000 10 000
0.001
0.0001
200 400 600 800 1000 1200
VCE (V)
Fig. 2 - IGBT Reverse Bias SOA
T
= 150 °C, VGE = 15 V
J
Revision: 20-May-16
3
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
TJ= 25 °C
V
CES
(V)
Document Number: 95856
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