Vishay VS-GA100TS60SFPbF Data Sheet
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INT-A-PAK
PRODUCT SUMMARY
V
CES
I
DC 220 A
C
V
at 100 A, 25 °C 1.11 V
CE(on)
Speed DC to 1 kHz
Package INT-A-PAK
Circuit Half bridge
VS-GA100TS60SFPbF
Vishay Semiconductors
“Half-Bridge” IGBT INT-A-PAK,
(Standard Speed IGBT), 100 A
FEATURES
• Standard speed PT IGBT technology
• Optimized for hard switching speed
2O3
®
antiparallel diodes with fast recovery
DBC
600 V
•FRED Pt
• Very low conduction losses
•Al
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Optimized for high current inverter stages (AC TIG welding
machines)
• Direct mounting to heatsink
• Very low junction to case thermal resistance
•Low EMI
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Peak switching current I
Gate to emitter voltage V
RMS isolation voltage V
Maximum power dissipation P
Operating junction temperature range T
Storage temperature range T
CES
C
CM
LM
GE
ISOL
D
J
Stg
TC = 25 °C 220
T
= 130 °C 100
C
Any terminal to case, t = 1 min 2500
TC = 25 °C 780
= 100 °C 312
T
C
600 V
440
440
± 20
-40 to +150
-40 to +125
A
V
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Collector to emitter leakage current I
Diode forward voltage drop V
Gate to emitter leakage current I
Revision: 10-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BR(CES)
CE(on)
GE(th)
CES
FM
GES
VGE = 0 V, IC = 1 mA 600 - -
VGE = 15 V, IC = 100 A - 1.11 1.28
I
= 200 A - 1.39 -
C
V
= 15 V, IC = 100 A, TJ = 125 °C - 1.08 1.22
GE
IC = 0.25 mA 3 - 6
VGE = 0 V, VCE = 600 V - - 1
= 0 V, VCE = 600 V, TJ = 125 °C - - 10
V
GE
IC = 100 A, VGE = 0 V - 1.44 1.96
= 100 A, VGE = 0 V, TJ = 125 °C - 1.25 1.54
I
C
VGE = ± 20 V - - ± 250 nA
1
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Document Number: 94544
VCollector to emitter voltage V
mA
V
VS-GA100TS60SFPbF
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge Q
Gate to collector charge Q
Rise time t
Fall time t
Turn-on switching energy E
Turn-off switching energy E
Total switching energy E
Turn-on switching energy E
Turn-off switching energy E
Total switching energy E
Input capacitance C
Reverse transfer capacitance C
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
on
off
on
off
ies
oes
res
rr
rr
g
ge
gc
r
f
ts
IC = 100 A
V
= 400 V
CC
V
= 15 V
GE
IC = 100 A
V
= 480 V
CC
V
= 15 V
GE
R
= 15
g
T
= 25 °C
J
IC = 100 A, VCC = 480 V
V
= 15 V, Rg = 15
GE
T
= 125 °C
ts
J
VGE = 0 V
V
= 30 V
CC
f = 1.0 MHz
rr
rr
rr
rr
IF = 50 A
dI
/dt = 200 A/μs
F
V
= 200 V
rr
IF = 50 A
dI
/dt = 200 A/μs
F
V
= 200 V, TJ = 125 °C
rr
Vishay Semiconductors
- 640 700
- 108 120
- 230 300
-0.45-
-1.0-
-46
-2329
-2735
-612
-3540
-4152
- 16 250 -
- 1040 -
- 190 -
-91155ns
- 10.6 15 A
- 500 900 nC
- 180 344 ns
- 17 20.5 A
- 1633 2315 nC
nCGate to emitter charge Q
μs
mJ
pFOutput capacitance C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction temperature range T
Storage temperature range T
Junction to case
per switch
Case to sink per module R
Mounting torque
case to heatsink - - 4
case to terminal 1, 2, 3 - - 3
R
J
Stg
thJC
thCS
Weight -185-g
-40 - 150
-40 - 125
- - 0.16
°C/Wper diode - - 0.48
-0.1-
°C
Nm
Revision: 10-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94544
www.vishay.com
V
GE -
Gate-to-Emitter Voltage (V)
I
C
-
Collector-to-Emitter Current (A)
1
10
100
1000
5.5 6.5 7.5 8.5
VCE = 10 V
380 μs PULSE WIDTH
TJ = 25 °C
T
J
= 125 °C
TC - Case Temperature (°C)
Maximum DC
Collector Current (A)
0
40
80
120
160
200
240
25 50 75 100 125 150
TJ - Junction Temperature (°C)
V
CE
-
Collector-to-Emitter Voltage (V)
0.7
0.9
1.1
1.3
1.5
25 50 75 100 125 150
IC = 200 A
IC = 100 A
IC = 50 A
Qg - Total Gate Charge (nC)
V
GE
-
Gate-to-Emitter Voltage (V)
0
5
10
15
20
0 100 200 300 400 500 600 700
VCC = 400 V
I
C
= 100 A
1000
VGE = 15 V
100
TJ = 25 °C
TJ = 125 °C
Collector-to-Emitter Current (A)
-
C
I
10
0.6 0.8 1 1.2 1.4 1.6 1.8
V
Collector-to-Emitter Voltage (V)
CE -
Fig. 1 - Typical Output Characteristics
VS-GA100TS60SFPbF
Vishay Semiconductors
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Maximum Collector Current vs. Case Temperature
Revision: 10-Jun-15
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
35
TJ = 25 °C, VCE = 480 V
= 15 V, IC = 100 A
V
30
GE
25
20
15
10
Switching Losses (mJ)
5
0
10 20 30 40 50
Rg - Gate Resistance (Ω)
Fig. 6 - Typical Switching Losses vs. Gate Resistance
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E
off
E
on
Document Number: 94544
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