Vishay VS-FCSP230LTR Data Sheet
www.vishay.com
FlipKY
®
1.5 A Chip Scale Package Schottky Barrier Rectifier
PRODUCT SUMMARY
I
F(AV)
V
R
V
at I
F
F
I
max. at 25 °C 100 μA
RM
I
max. at 125 °C 30 mA
RM
max. 150 °C
T
J
E
AS
1.5 A
30 V
0.37 V
10 mJ
FlipKY®,
FEATURES
•Ultra low VF per footprint area
• Low leakage
• Low thermal resistance
• One-fifth footprint of SMA
• Super low profile (0.6 mm)
• Available tested on tape and reel
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Reverse polarity protection
• Current steering
• Freewheeling
• Flyback
•Oring
DESCRIPTION
Vishay’s FlipKY® product family utilizes wafer level
chip scale packaging to deliver Schottky diodes with the
lowest V
bump 1.5 x 1.5 mm devices can deliver up to 1.5 A and
occupy only 2.3 mm2 of board space. The anode and
cathode connections are made through solder bump pads
on one side of the silicon enabling designers to strategically
place the diodes on the PCB. This design not only minimizes
board space but also reduces thermal resistance and
inductance, which can improve overall circuit efficiency.
Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, bluetooth, GPS, PDAs,
and portable hard disk drives where space savings and
performance are crucial.
VS-FCSP230LTR
Vishay Semiconductors
to PCB footprint area in industry. The four
F
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX. UNITS
V
I
F(AV)
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.5
1.5 Apk, TJ = 125 °C 0.37 V
30 V
250
- 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-FCSP230LTR UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
Revision: 04-Jul-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
R
RWM
30 V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94497
A
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-FCSP230LTR
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current at 25 °C
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
AS
50 % duty cycle at T
5 µs sine or 3 µs rect. pulse
= 103 °C, rectangular waveform 1.5
PCB
Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse 21
rated V
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 10 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
1.5 A
Maximum forward voltage drop
See fig. 1
V
FM
3 A 0.52 0.56
(1)
1.5 A
3 A 0.44 0.48
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance C
(1)
I
RM
T
VR = Rated V
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 210 pF
Maximum voltage rate of charge dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
R
R
T
= 25 °C
J
= 125 °C
T
J
TJ = 25 °C 30 100 µA
T
= 125 °C 10 30 mA
J
Vishay Semiconductors
RRM
220
applied
2.0 A
0.44 0.48
0.34 0.37
- 10 000 V/µs
A
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Typical thermal resistance,
junction to PCB
Maximum thermal resistance,
junction to ambient
Notes
(1)
(2)
Mounted 1" square PCB
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
- 55 to 150 °C
J
Stg
(2)
R
thJL
R
thJA
DC operation 40
62
°C/W
Revision: 04-Jul-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94497
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