Vishay VS-FCSP1H40LTR Data Sheet

FlipKY
®
VS-FCSP1H40LTR
www.vishay.com
Vishay Semiconductors
FlipKY®,
1 A Chip Scale Package Schottky Barrier Rectifier
FEATURES
• Super low profile (0.6 mm)
• One-fifth footprint of SMA
•Ultralow V
• Low leakage
• Low thermal resistance
• Available tested on tape and reel
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Reverse polarity protection
• Current steering
• Freewheeling
•Flyback
•Oring
per footprint area
F
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
V
at I
F
F
I
max. at 25 °C 15 μA
RM
I
max. at 125 °C 4 mA
RM
max. 150 °C
T
J
E
AS
1 A
40 V
0.42 V
10 mJ
Vishay’s FlipKY® product family utilizes wafer level chip scale packaging to deliver Schottky diodes with the lowest VF to PCB footprint area in industry. The four bump 1.5 mm x 1.5 mm devices can deliver up to 1 A and
2
occupy only 2.3 mm
of board space. The anode and cathode connections are made through solder bump pads on one side of the silicon enabling designers to strategically place the diodes on the PCB. This design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency.
Typical applications include hand-held, portable equipment such as cell phones, MP3 players, bluetooth, GPS, PDAs, and portable hard disk drives where space savings and performance are crucial.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX. UNITS
V
I
F(AV)
I
FSM
V
T
RRM
F
J
Rectangular waveform 1
1 Apk, TJ = 125 °C 0.42 V
40 V
250
- 55 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL VS-FCSP1H40LTR UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
Revision: 04-Jul-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
R
RWM
40 V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94493
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-FCSP1H40LTR
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle non-repetitive surge current at 25 °C
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
AS
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
= 117 °C, rectangular waveform 1.0
PCB
Following any rated load condition and with
10 ms sine or 6 ms rect. pulse 21
rated V
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 10 mJ
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
1 A
Maximum forward voltage drop See fig. 1
V
FM
2 A 0.54 0.59
(1)
1 A
2 A 0.48 0.52
TJ = 25 °C
Maximum reverse leakage current See fig. 2
Maximum junction capacitance C
(1)
I
RM
T
J
T
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 160 pF
Maximum voltage rate of charge dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 125 °C
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
= 20 V 0.5 1
V
R
V
= 10 V 0.2 0.5
R
V
= 5 V 0.15 0.3
R
V
= Rated V
R
= 20 V 0.9 2
V
R
V
= 10 V 0.6 1.5
R
V
= 5 V 0.5 1
R
Vishay Semiconductors
250
applied
RRM
2.0 A
0.48 0.52
0.38 0.42
R
R
315
2.5 4
- 10 000 V/μs
A
V
μA
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Typical thermal resistance, junction to PCB
Maximum thermal resistance, junction to ambient
Notes
(1)
(2)
Mounted 1" square PCB
thermal runaway condition for a diode on its own heatsink
Revision: 04-Jul-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
(1)
, T
T
J
R
- 55 to 150 °C
Stg
(2)
thJL
DC operation 40
°C/W
R
thJA
2
62
Document Number: 94493
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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