Datasheet VS-FCSP07H40TR DataSheet (Vishay)

FlipKY

®

VS-FCSP07H40TR

www.vishay.com

Vishay Semiconductors

FlipKY®,

Chip Scale Package Schottky Barrier Rectifier, 0.75 A

FEATURES

•Ultra low VF to footprint area

• Very low profile (< 0.6 mm)

• Low thermal resistance

• Supplied tested and on tape and reel

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Reverse polarity protection

• Current steering

• Freewheeling

• Flyback

•Oring

DESCRIPTION

PRODUCT SUMMARY

I

F(AV)

V

R

V

at I

F

F

I

max. at 25 °C 10 μA

RM

I

max. at 125 °C 3 mA

RM

max. 150 °C

T

J

E

AS

0.75 A

40 V

0.47 V

5 mJ

Vishay’s FlipKY® product family utilizes wafer level
chip scale packaging to deliver Schottky diodes with the
lowest V

to PCB footprint area in industry. The three pad

F

0.9 mm x 1.2 mm devices can deliver up to 0.75 A and

2

occupy only 1.08 mm

of board space. The anode and
cathode connections are made through solder bump pads
on one side of the silicon enabling designers to strategically
place the diodes on the PCB. This design not only minimizes
board space but also reduces thermal resistance and
inductance, which can improve overall circuit efficiency.

Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, bluetooth, GPS, PDAs,
and portable hard disk drives where space savings and
performance are crucial.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS MAX. UNITS

V

I

F(AV)

I

FSM

V

T

RRM

F

J

Rectangular waveform 0.75

0.75 Apk, TJ = 125 °C 0.47 V

40 V

190

- 55 to 150 °C

A

VOLTAGE RATINGS

PARAMETER SYMBOL VS-FCSP07H40TR UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

Revision: 04-Jul-11

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R

RWM

40 V

1

, [e-mail], [e-mail]

Document Number: 94561

dP

tot

dT

J

-------------

1

R

thJA

--------------<

VS-FCSP07H40TR

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current at 25 °C

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

I

FSM

AR

50 % duty cycle at T

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 10

AS

TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 5mJ

Current decaying linearly to zero in 1 μs
Frequency limited by T

= 106 °C, rectangular waveform 0.75

PCB

Following any rated
load condition and with
rated V

maximum VA = 1.5 x VR typical

J

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS

0.75 A

Maximum forward voltage drop
See fig. 1

V

FM

1.5 A 0.59 0.64

(1)

0.75 A

1.5 A 0.52 0.57

TJ = 25 °C

Maximum reverse leakage current
See fig. 2

Maximum junction capacitance C

(1)

I

RM

T

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C -90pF

T

Maximum voltage rate of charge dV/dt Rated V

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

= 125 °C

R

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

= 20 V 0.2 0.5

V

R

= 10 V 0.08 0.25

V

R

V

= 5 V 0.05 0.15

R

V

= Rated V

R

= 20 V 0.2 1

V

R

V

= 10 V 0.15 0.8

R

= 5 V 0.125 0.5

V

R

Vishay Semiconductors

190

applied

RRM

0.5 A

0.51 0.55

0.42 0.47

R

R

110

0.7 3

- 10 000 V/µs

A

V

µA

mA

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and
storage temperature range

Typical thermal resistance,
junction to PCB

Maximum thermal resistance,
junction to ambient

Notes

(1)

(2)

Mounted on minimum footprint PCB

thermal runaway condition for a diode on its own heatsink

Revision: 04-Jul-11

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(1)

T

, T

J

Stg

(2)

R

thJL

DC operation 35

- 55 to 150 °C

°C/W

R

thJA

2

150

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Forward Voltage Drop - VFM (V)

Instantaneous Forward Current - I

F

(A)

0.1

1

10

0.2 0.4 0.6 0.8 1 1

.2

T = 150˚C

T = 125˚C

T = 25˚C

J

J

J

Reverse Voltage - VR (V)

Reverse Current - I

R

(μA)

0.01

0.1

1

10

100

1000

0000

0 5 10 15 20 25 30 35 4

125˚C

100˚C

75˚C

50˚C

25˚C

Tj = 150˚C

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Fig. 1 - Maximum Forward Voltage Drop Characteristics

(Per Leg)

VS-FCSP07H40TR

Vishay Semiconductors

1000

T = 25˚C

J

(p F)

T

100

Junction Capacitance - C

10

0 5 10 15 20 25 30 35 40

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

160

160

150

150

140

140

130

130

120

120

110

110

100

100

90

90

Square wave (D=0.50)

Square wave (D=0.50)

80

80

80% rated Vr applied

Allowable Case Temperature (°C)

Allowable Case Temperature (°C)

80% rated Vr applied

70

70

see note (2)

see note (1)

60

60

0 0.2 0.4 0.6 0.8 1.00 0.2 0.4 0.6 0.8 1.0

0 0.2 0.4 0.6 0.8 1.00 0.2 0.4 0.6 0.8 1.0

Average Forward Current - I

Average Forward Current - I

Fig. 4 - Maximum Allowable Case Temperature vs.

Average Forward Current (Per Leg)

D = 0.75

D = 0.75

D = 0.50

D = 0.50

D = 0.33

D = 0.33

D = 0.25

D = 0.25

D = 0.20

D = 0.20

DC

DC

F(AV)

F(AV)

(A)

(A)

1.2

1.2

1

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I

Revision: 04-Jul-11

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Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage (Per Leg)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

REV

x VFM at (I

F(AV)

) x R

;

thJC

/D) (see fig. 6); Pd

F(AV)

0.6

D = 0.20
D = 0.25

0.5

D = 0.33
D = 0.50

0.4

0.3

D = 0.75

RMS Limit

DC

0.2

Average Power Loss (Watts)

0.1

0

0

0 0.2 0.4 0.6 0.8 1

Average Forward Current - I

F(AV)

1.2

(A)

Fig. 5 - Forward Power Loss Characteristics (Per Leg)

= Inverse power loss = VR1 x IR (1 - D); IR at 80 % VR applied

REV

3

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Square Wave Pulse Duration - tp (microsec)

Non-Repetitive Surge Current - I

FSM

(A)

1

10

100

1

000

10 100 1000 10000

At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge

VS-FCSP07H40TR

Vishay Semiconductors

Fig. 6 - Maximum Non-Repetitive Surge Current (Per Leg)

L

High-speed

switch

Freewheel

diode

40HFL40S02

V

= 25 V

d

+

Current
monitor

D.U.T.

IRFP460

= 25 Ω

R

g

Fig. 7 - Unclamped Inductive Test Circuit

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95049

Part marking information www.vishay.com/doc?95060

Packaging information www.vishay.com/doc?95062

Revision: 04-Jul-11

For technical questions within your region: [e-mail]

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DIMENSIONS in millimeters

0.071

FlipKY® 0.5 A/0.75 A

0.500

0.200

21

0.300

Assignments

1 = Cathode
2 = Cathode
3 = Anode

Outline Dimensions

Vishay High Power Products

0.520

0.460

0.125

0.105

0.173

0.700

1.244

3

0.300

0.400

0.914

Recommended footprint

0.500

PIN IPedohtac 2 N 1 cathode

0.350

0.250

0.350

PIN 3 anode

0.450

1.244

0.300

0.395

0.355

0.700

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994

• Controlling dimension: millimeter

Document Number: 95049 For technical questions concerning discrete products, contact: [e-mail]
Revision: 07-Sep-09 For technical questions concerning module products, contact: [e-mail]

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