Vishay VS-FCSP0730TR Data Sheet

VS-FCSP0730TR

www.vishay.com	Vishay Semiconductors

FlipKY®,

Chip Scale Package Schottky Barrier Rectifier, 0.75 A

FlipKY®

PRODUCT SUMMARY

IF(AV)	0.75 A
VR	30 V
VF at IF	0.37 V
IRM max. at 25 °C	50 μA
IRM max. at 125 °C	15 mA
TJ max.	150 °C
EAS	5 mJ

FEATURES

• Ultra low VF to footprint area

• Very low profile (< 0.6 mm)

• Low thermal resistance

• Supplied tested and on tape and reel

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•Reverse polarity protection

•Current steering

•Freewheeling

•Flyback

•Oring

DESCRIPTION

Vishay’s FlipKY® product family utilizes wafer level chip scale packaging to deliver Schottky diodes with the lowest VF to PCB footprint area in industry. The three pad 0.9 mm x 1.2 mm devices can deliver up to 0.75 A and occupy only 1.08 mm2 of board space. The anode and cathode connections are made through solder bump pads on one side of the silicon enabling designers to strategically place the diodes on the PCB. This design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency.

Typical applications include hand-held, portable equipment such as cell phones, MP3 players, bluetooth, GPS, PDAs, and portable hard disk drives where space savings and performance are crucial.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	MAX.	UNITS
VRRM		30	V
IF(AV)	Rectangular waveform	0.75	A
IFSM		190
VF	0.75 Apk, TJ = 125 °C	0.37	V
TJ		- 55 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	VS-FCSP0730TR	UNITS
	Maximum DC reverse voltage	VR	30	V
	Maximum working peak reverse voltage	VRWM

Revision: 04-Jul-11

1

Document Number: 94336

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-FCSP0730TR

www.vishay.com

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

50 % duty cycle at TPCB = 127 °C, rectangular waveform

0.75

Maximum peak one cycle

5 µs sine or 3 µs rect. pulse

Following any rated

190

A

non-repetitive surge current at 25 °C

IFSM

load condition and with

10 ms sine or 6 ms rect. pulse

rated VRRM applied

10

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH

5

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 μs

0.5

A

Frequency limited by TJ maximum VA = 1.5 x VR typical

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX.

UNITS

0.75 A

TJ = 25 °C

0.43

0.47

Maximum forward voltage drop

VFM (1)

1.5 A

0.50

0.54

V

See fig. 1

0.75 A

TJ = 125 °C

0.33

0.37

1.5 A

0.43

0.47

Maximum reverse leakage current

IRM (1)

TJ = 25 °C

VR = Rated VR

10

50

µA

See fig. 2

TJ = 125 °C

5

15

mA

Maximum junction capacitance

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C

-

90

pF

Maximum voltage rate of charge

dV/dt

Rated VR

-

10 000

V/µs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

TJ (1), TStg

- 55 to 150

°C

storage temperature range

Typical thermal resistance,

RthJL (2)

DC operation

35

junction to PCB

°C/W

Typical thermal resistance,

RthJA

150

junction to ambient

Notes

(1)

dPtot

1

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dTJ

RthJA

(2)

Mounted on minimum footprint PCB

Revision: 04-Jul-11

2

Document Number: 94336

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000