Vishay VS-FCSP0530ETR Data Sheet
www.vishay.com
FlipKY
®
PRODUCT SUMMARY
I
F(AV)
V
R
V
at I
F
F
I
max. at 25 °C 50 μA
RM
I
max. at 125 °C 15 mA
RM
max. 150 °C
T
J
E
AS
0.5 A
30 V
0.33 V
5 mJ
FlipKY®, 0.5 A
FEATURES
•Ultralow VF to footprint area
• Very low profile (< 0.6 mm)
• Low thermal resistance
• Supplied tested and on tape and reel
• Designed for consumer level
APPLICATIONS
• Reverse polarity protection
• Current steering
• Freewheeling
• Flyback
•Oring
DESCRIPTION
FlipKY® product family utilizes wafer level chip scale
packaging to deliver Schottky diodes with the lowest
to PCB footprint area in the industry. The three
V
F
pad 0.9 mm x 1.2 mm devices can deliver up to 0.5 A and
occupy only 1.08 mm
cathode connections are made through solder bump pads
on one side of the silicon rather than through protruding
leads enabling designers to strategically place the diodes on
the PCB. This design not only minimizes board space but
also reduces thermal resistance and inductance, which can
improve overall circuit efficiency.
Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, PDAs, and portable hard
disk drives where space savings and performance are
crucial.
VS-FCSP0530ETR
Vishay Semiconductors
2
of board space. The anode and
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 0.5 A
30 V
tp = 5 μs sine 190 A
0.5 Apk, TJ = 125 °C 0.33 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-FCSP0530ETR UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
Revision: 04-Jul-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
R
RWM
30 V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93429
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-FCSP0530ETR
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
= 25 °C
at T
J
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
AS
50 % duty cycle at T
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 10
= 133 °C, rectangular waveform 0.5
PCB
Following any rated
load condition and
with rated V
applied
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH 5mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
0.5 A
Maximum forward voltage drop
See fig. 1
(1)
V
FM
1 A 0.45 0.49
0.5 A
1 A 0.36 0.39
Maximum reverse leakage current
See fig. 2
I
RM
Maximum junction capacitance C
(1)
T
TJ = 25 °C
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 90 pF
Maximum voltage rate of charge dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 125 °C 5 15 mA
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Vishay Semiconductors
190
RRM
0.5 A
0.40 0.44
0.29 0.33
10 50 μA
R
- 10 000 V/μs
A
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Typical thermal resistance,
junction to PCB
Typical thermal resistance,
junction to ambient
Notes
(1)
(2)
Mounted on dual sided 0.58" square FR4 PCB with 0.2 square inches of 1 oz. top copper area
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
- 55 to 150 °C
J
Stg
(2)
R
thJL
(2)
R
thJA
DC operation 35
150
°C/W
Revision: 04-Jul-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93429
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