Vishay VS-FB190SA10 Data Sheet

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SOT-227

PRODUCT SUMMARY

DSS

DC 190 A

DS(on)

Type Modules - MOSFET

Package SOT-227

Power MOSFET, 190 A

FEATURES

• Fully isolated package

• Very low on-resistance

• Fully avalanche rated

• Dynamic dV/dt rating

• Low drain to case capacitance

• Low internal inductance

• Optimized for SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

100 V

0.0065 

DESCRIPTION

High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.

VS-FB190SA10

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Continuous drain current at V

Pulsed drain current I

Power dissipation P

Linear derating factor 2.7 W/°C

Gate to source voltage V

Single pulse avalanche energy E

Avalanche current I

Repetitive avalanche energy E

Peak diode recovery dV/dt dV/dt

Operating junction and storage temperature range T

Insulation withstand voltage (AC-RMS) V

Mounting torque M4 screw 1.3 Nm

Notes

(1)

Repetitive rating; pulse width limited by maximum junction temperature.

(2)

Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.

(3)

ISD  180 A, dI/dt  83 A/μs, VDD  V

Document Number: 93459 For technical questions, contact: indmodules@vishay.com Revision: 12-Apr-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

10 V I

, TJ  150 °C.

(BR)DSS

This document is subject to change without notice.

(2)

(1)

, T

Stg

ISO

TC = 40 °C 190

= 100 °C 130

720

TC = 25 °C 568 W

± 20 V

700 mJ

180 A

48 mJ

(3)

5.7 V/ns

- 55 to + 150 °C

2.5 kV

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VS-FB190SA10

Vishay Semiconductors

Power MOSFET, 190 A

THERMAL RESISTANCE

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Junction to case R

Case to heatsink, flat, greased surface R

thJC

thCS

--0.22

-0.05-

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Drain to source breakdown voltage V

Breakdown voltage temperature coefficient

V

(BR)DSS

Static drain to source on-resistance R

Gate threshold voltage V

Forward transconductance g

Drain to source leakage current I

Gate to source forward leakage I

Total gate charge Q

Gate to drain ("Miller") charge Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Internal source inductance L

Input capacitance C

Reverse transfer capacitance C

DS(on)

GS(th)

DSS

GSS

-110-

d(on)

d(off)

-335-

iss

oss

rss

VGS = 0 V, ID = 250 μA 100 - - V

/TJReference to 25 °C, ID = 1 mA - 0.093 - V/°C

VGS = 10 V, ID = 180 A - 0.0054 0.0065 

VDS = VGS, ID = 250 μA 2.0 3.3 4.35 V

VDS = 25 V, ID = 180 A 93 - - S

VDS = 100 V, VGS = 0 V - - 50

= 80 V, VGS = 0 V, TJ = 125 °C - - 500

VGS = 20 V - - 200

= - 20 V - - - 200

ID = 180 A V

= 80 V

= 10 V

VDD = 50 V I

= 180 A

= 2.0(internal)

= 0.27

-250-

-40-

-45-

-351-

-181-

Between lead, and center of die contact - 5.0 - nH

VGS = 0 V

= 25 V

f = 1.0 MHz

- 10 700 -

- 2800 -

- 1300 -

μA

nCGate to source charge Q

pFOutput capacitance C

SOURCE-DRAIN RATINGS AND CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Continuous source current (body diode)

Pulsed source current (body diode) I

Diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Forward turn-on time t

MOSFET symbol showing the integral reverse p-n junction diode.

TJ = 25 °C, IS = 180 A, VGS = 0 V - 1.0 1.3 V

TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - 300 - ns

Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

- - 190

- - 740

-2.6-μC

Document Number: 93459

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VS-FB190SA10

100

1000

0.1 1 10 100

20µs PULSE WIDTH T = 25 C

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

0.1 1 10 100

20μs PULSE WIDTH T = 150 C

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

4.5V

100

1000

4 5 6 7 8 9 10

V = 25V 20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

T = 150 C

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

180A

1 10 100

5000

10000

15000

20000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

V C C C

= = = =

0V, C C C

f = 1MHz

+ C

C SHORTED

GS iss gs gd , ds rss gd oss ds gd

iss

oss

rss

Power MOSFET, 190 A

Fig. 1 - Typical Output Characteristics

Vishay Semiconductors

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 2 - Typical Output Characteristics

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 3 - Typical Transfer Characteristics

I =

V , Gate-to-Source Voltage (V)

0 50 100 150 200 250 300 350 400

This document is subject to change without notice.

Fig. 5 - Typical Capacitance vs.

Drain to Source Voltage

180 A

V = 80V

V = 50V

V = 20V

FOR TEST CIRCUIT

SEE FIGURE

Q , Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs.

Gate to Source Voltage

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VS-FB190SA10

0.1

100

1000

0.2 0.6 1.0 1.4 1.8

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

T = 25 C

0 255075100 150125 175 200

100

125

150

175

Allowable Case Temperature (°C)

I , Drain Current in DC (A)

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

D.U.T.

10 V

Vishay Semiconductors

Fig. 7 - Typical Source Drain Diode Forward Voltage

10000

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

Power MOSFET, 190 A

Fig. 9 - Maximum Drain Current vs.

Case Temperature

100

I , Drain Current (A)I , Drain Current (A)

= 25 C

T T= 150 C

Single Pulse

1 10 100 1000

V , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

100us

1ms

10ms

Fig. 10a - Switching Time Test Circuit

90%

10% V

d(on)tr

d(off)tf

Fig. 10b - Switching Time Waveforms

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VS-FB190SA10

0.01

0.1

0.0001 0.001 0.01 0.1 101

t , Rectangular Pulse Duration (s)

thJC

- Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

0.1

0.2

0.3

0.5

0.75

0.01 Ω

D.U.T

Driver

15 V

20 V

(BR)DSS

Power MOSFET, 190 A

Vishay Semiconductors

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case

1500

1200

TOP

BOTTOM

71A 100A 160A

900

600

300

E , Single Pulse Avalanche Energy (mJ)

Fig. 12a - Unclamped Inductive Test Circuit

25 50 75 100 125 150

Starting T , Junction Temperature( C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

Fig. 12b - Unclamped Inductive Waveforms

Fig. 13a - Basic Gate Charge Waveform

Charge

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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VS-FB190SA10

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by duty factor "D"

• D.U.T. - Device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Vishay Semiconductors

Power MOSFET, 190 A

Current regulator

Same type as D.U.T.

50 kΩ

12 V

0.2 µF

0.3 µF

3 mA

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

D.U.T.

Fig. 13c - Peak Diode Recovery dV/dt Test Circuit

Driver Gate Drive

P.W.

D.U.T. I

Reverse Recovery Current

D.U.T. V

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Re-Applied Voltage

Inductor Curent

* V

= 5V for Logic Level Devices

This document is subject to change without notice.

Period

Waveform

Body Diode Forward

Current

Waveform

Body Diode Forward Drop

Ripple ≤ 5%

di/dt

Diode Recovery

dv/dt

Fig. 14 - For N-Channel Power MOSFETs

D =

P. W .

Period

=10V

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VS-FB190SA10

2 - Power MOSFET

1 - Vishay Semiconductors product

3 - Generation 5 MOSFET

4 - Current rating (190 = 190 A)

5 - Single switch

6 - Package indicator (SOT-227)

7 - Voltage rating (10 = 100 V)

Device code

51 32 4 6 7

VS- F B 190 S A 10

(D)

(G)

(S)

S(1-4)

D(3)

G(2)

(S)

(D)

(G)

Lead Assignment

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT

CONFIGURATION CODE

Power MOSFET, 190 A

Vishay Semiconductors

CIRCUIT DRAWING

Single switch S

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

LINKS TO RELATED DOCUMENTS

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161) Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

Document Number: 95423 For technical questions, contact: indmodules@vishay.com Revision: 15-Nov-10 1

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Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

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Vishay VS-FB190SA10 Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual

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