Vishay VS-FB190SA10 Data Sheet
SOT-227
PRODUCT SUMMARY
V
DSS
DC 190 A
I
D
R
DS(on)
Type Modules - MOSFET
Package SOT-227
Power MOSFET, 190 A
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
100 V
0.0065
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized design, very low
on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
VS-FB190SA10
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at V
Pulsed drain current I
Power dissipation P
Linear derating factor 2.7 W/°C
Gate to source voltage V
Single pulse avalanche energy E
Avalanche current I
Repetitive avalanche energy E
Peak diode recovery dV/dt dV/dt
Operating junction and storage temperature range T
Insulation withstand voltage (AC-RMS) V
Mounting torque M4 screw 1.3 Nm
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature.
(2)
Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.
(3)
ISD 180 A, dI/dt 83 A/μs, VDD V
Document Number: 93459 For technical questions, contact: indmodules@vishay.com
Revision: 12-Apr-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 V I
GS
, TJ 150 °C.
(BR)DSS
This document is subject to change without notice.
D
DM
D
GS
(2)
AS
(1)
AR
(1)
AR
, T
J
Stg
ISO
TC = 40 °C 190
= 100 °C 130
C
720
TC = 25 °C 568 W
± 20 V
700 mJ
180 A
48 mJ
(3)
5.7 V/ns
- 55 to + 150 °C
2.5 kV
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VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
THERMAL RESISTANCE
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case R
Case to heatsink, flat, greased surface R
thJC
thCS
--0.22
-0.05-
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
Breakdown voltage temperature
coefficient
V
(BR)DSS
(BR)DSS
Static drain to source on-resistance R
Gate threshold voltage V
Forward transconductance g
Drain to source leakage current I
Gate to source forward leakage I
Total gate charge Q
Gate to drain ("Miller") charge Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Internal source inductance L
Input capacitance C
Reverse transfer capacitance C
DS(on)
GS(th)
fs
DSS
GSS
g
gs
-110-
gd
d(on)
r
d(off)
-335-
f
S
iss
oss
rss
VGS = 0 V, ID = 250 μA 100 - - V
/TJReference to 25 °C, ID = 1 mA - 0.093 - V/°C
VGS = 10 V, ID = 180 A - 0.0054 0.0065
VDS = VGS, ID = 250 μA 2.0 3.3 4.35 V
VDS = 25 V, ID = 180 A 93 - - S
VDS = 100 V, VGS = 0 V - - 50
V
= 80 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VGS = 20 V - - 200
V
= - 20 V - - - 200
GS
ID = 180 A
V
= 80 V
DS
V
= 10 V
GS
VDD = 50 V
I
= 180 A
D
R
= 2.0(internal)
g
= 0.27
R
D
-250-
-40-
-45-
-351-
-181-
Between lead, and center of die contact - 5.0 - nH
VGS = 0 V
= 25 V
V
DS
f = 1.0 MHz
- 10 700 -
- 2800 -
- 1300 -
μA
nA
nCGate to source charge Q
ns
pFOutput capacitance C
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode)
Pulsed source current (body diode) I
Diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Forward turn-on time t
I
SM
on
S
SD
rr
MOSFET symbol
showing the integral
reverse p-n junction diode.
G
TJ = 25 °C, IS = 180 A, VGS = 0 V - 1.0 1.3 V
TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - 300 - ns
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
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2 Revision: 12-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
D
- - 190
- - 740
S
-2.6-μC
Document Number: 93459
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A
VS-FB190SA10
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
1 10 100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
Power MOSFET, 190 A
Fig. 1 - Typical Output Characteristics
Vishay Semiconductors
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics
Document Number: 93459 For technical questions, contact: indmodules@vishay.com
Revision: 12-Apr-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Transfer Characteristics
20
I =
D
15
10
5
GS
V , Gate-to-Source Voltage (V)
0
0 50 100 150 200 250 300 350 400
This document is subject to change without notice.
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
180 A
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR TEST CIRCUIT
SEE FIGURE
Q , Total Gate Charge (nC)
G
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
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