High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized design, very low
on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
VS-FB190SA10
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS
Continuous drain current at V
Pulsed drain currentI
Power dissipationP
Linear derating factor2.7W/°C
Gate to source voltageV
Single pulse avalanche energyE
Avalanche currentI
Repetitive avalanche energyE
Peak diode recovery dV/dt dV/dt
Operating junction and storage temperature rangeT
Insulation withstand voltage (AC-RMS)V
Mounting torqueM4 screw1.3Nm
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature.
(2)
Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.
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