Vishay VS-FB190SA10 Data Sheet

SOT-227
PRODUCT SUMMARY
V
DSS
DC 190 A
I
D
R
DS(on)
Type Modules - MOSFET
Package SOT-227
Power MOSFET, 190 A
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
100 V
0.0065
DESCRIPTION
High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at V
Pulsed drain current I
Power dissipation P
Linear derating factor 2.7 W/°C
Gate to source voltage V
Single pulse avalanche energy E
Avalanche current I
Repetitive avalanche energy E
Peak diode recovery dV/dt dV/dt
Operating junction and storage temperature range T
Insulation withstand voltage (AC-RMS) V
Mounting torque M4 screw 1.3 Nm
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature.
(2)
Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A.
(3)
ISD 180 A, dI/dt 83 A/μs, VDD V
Document Number: 93459 For technical questions, contact: indmodules@vishay.com Revision: 12-Apr-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 V I
GS
, TJ 150 °C.
(BR)DSS
This document is subject to change without notice.
D
DM
D
GS
(2)
AS
(1)
AR
(1)
AR
, T
J
Stg
ISO
TC = 40 °C 190
= 100 °C 130
C
720
TC = 25 °C 568 W
± 20 V
700 mJ
180 A
48 mJ
(3)
5.7 V/ns
- 55 to + 150 °C
2.5 kV
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AT
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VS-FB190SA10
Vishay Semiconductors
Power MOSFET, 190 A
THERMAL RESISTANCE
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case R
Case to heatsink, flat, greased surface R
thJC
thCS
--0.22
-0.05-
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
Breakdown voltage temperature coefficient
V
(BR)DSS
(BR)DSS
Static drain to source on-resistance R
Gate threshold voltage V
Forward transconductance g
Drain to source leakage current I
Gate to source forward leakage I
Total gate charge Q
Gate to drain ("Miller") charge Q
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Internal source inductance L
Input capacitance C
Reverse transfer capacitance C
DS(on)
GS(th)
fs
DSS
GSS
g
gs
-110-
gd
d(on)
r
d(off)
-335-
f
S
iss
oss
rss
VGS = 0 V, ID = 250 μA 100 - - V
/TJReference to 25 °C, ID = 1 mA - 0.093 - V/°C
VGS = 10 V, ID = 180 A - 0.0054 0.0065
VDS = VGS, ID = 250 μA 2.0 3.3 4.35 V
VDS = 25 V, ID = 180 A 93 - - S
VDS = 100 V, VGS = 0 V - - 50
V
= 80 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VGS = 20 V - - 200
V
= - 20 V - - - 200
GS
ID = 180 A V
= 80 V
DS
V
= 10 V
GS
VDD = 50 V I
= 180 A
D
R
= 2.0(internal)
g
= 0.27
R
D
-250-
-40-
-45-
-351-
-181-
Between lead, and center of die contact - 5.0 - nH
VGS = 0 V
= 25 V
V
DS
f = 1.0 MHz
- 10 700 -
- 2800 -
- 1300 -
μA
nA
nCGate to source charge Q
ns
pFOutput capacitance C
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current (body diode)
Pulsed source current (body diode) I
Diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Forward turn-on time t
I
SM
on
S
SD
rr
MOSFET symbol showing the integral reverse p-n junction diode.
G
TJ = 25 °C, IS = 180 A, VGS = 0 V - 1.0 1.3 V
TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - 300 - ns
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
D
- - 190
- - 740
S
-2.6-μC
Document Number: 93459
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A
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH T = 25 C
J
°
TOP
BOTTOM
VGS 15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH T = 150 C
J
°
TOP
BOTTOM
VGS 15V 10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10
V = 25V 20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
1 10 100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V C C C
= = = =
0V, C C C
f = 1MHz
+ C
+ C
C SHORTED
GS iss gs gd , ds rss gd oss ds gd
C
iss
C
oss
C
rss
Power MOSFET, 190 A
Fig. 1 - Typical Output Characteristics
Vishay Semiconductors
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Typical Transfer Characteristics
20
I =
D
15
10
5
GS
V , Gate-to-Source Voltage (V)
0
0 50 100 150 200 250 300 350 400
This document is subject to change without notice.
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
180 A
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR TEST CIRCUIT
SEE FIGURE
Q , Total Gate Charge (nC)
G
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
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VS-FB190SA10
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
0 255075100 150125 175 200
25
50
75
100
125
150
175
Allowable Case Temperature (°C)
I , Drain Current in DC (A)
D
DC
Pulse width 1 µs Duty factor ≤ 0.1 %
D.U.T.
10 V
+
-
V
DS
R
D
V
DD
R
G
V
GS
Vishay Semiconductors
Fig. 7 - Typical Source Drain Diode Forward Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
Power MOSFET, 190 A
Fig. 9 - Maximum Drain Current vs.
Case Temperature
100
D
I , Drain Current (A)I , Drain Current (A)
10
°
= 25 C
C
°
T T= 150 C
J
Single Pulse
1
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100us
1ms
10ms
Fig. 10a - Switching Time Test Circuit
V
DS
90%
10% V
GS
t
d(on)tr
t
d(off)tf
Fig. 10b - Switching Time Waveforms
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0.01
0.1
1
0.0001 0.001 0.01 0.1 101
t , Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
0.1
0.2
0.3
0.5
DC
0.75
0.01 Ω
D.U.T
L
+
-
Driver
A
15 V
20 V
R
G
V
DS
I
AS
t
p
V
DD
t
p
V
(BR)DSS
I
AS
Power MOSFET, 190 A
Vishay Semiconductors
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case
1500
1200
TOP
BOTTOM
I
D
71A 100A 160A
900
600
300
AS
E , Single Pulse Avalanche Energy (mJ)
0
Fig. 12a - Unclamped Inductive Test Circuit
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
G
°
10 V
Q
GS
V
G
Fig. 12b - Unclamped Inductive Waveforms
Fig. 13a - Basic Gate Charge Waveform
Q
GD
Charge
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VS-FB190SA10
+
-
+
+
+
-
-
-
• dV/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by duty factor "D"
• D.U.T. - Device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
1
2
4
3
R
G
V
DD
Vishay Semiconductors
Power MOSFET, 190 A
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
V
GS
0.3 µF
3 mA
I
G
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
D.U.T.
I
+
V
DS
-
D
Fig. 13c - Peak Diode Recovery dV/dt Test Circuit
Driver Gate Drive
P.W.
D.U.T. I
Reverse Recovery Current
D.U.T. V
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-Applied Voltage
Inductor Curent
* V
= 5V for Logic Level Devices
GS
This document is subject to change without notice.
Period
Waveform
SD
Body Diode Forward
Current
Waveform
DS
Body Diode Forward Drop
Ripple ≤ 5%
di/dt
Diode Recovery
dv/dt
Fig. 14 - For N-Channel Power MOSFETs
D =
P. W .
Period
=10V
V
*
GS
V
DD
I
SD
Document Number: 93459
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2 - Power MOSFET
1 - Vishay Semiconductors product
3 - Generation 5 MOSFET
4 - Current rating (190 = 190 A)
5 - Single switch
6 - Package indicator (SOT-227)
7 - Voltage rating (10 = 100 V)
Device code
51 32 4 6 7
VS- F B 190 S A 10
3
(D)
2
(G)
4
(S)
1
(S)
S(1-4)
D(3)
G(2)
1
(S)
4
(S)
3
2
(D)
(G)
Lead Assignment
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
Power MOSFET, 190 A
Vishay Semiconductors
CIRCUIT DRAWING
Single switch S
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
LINKS TO RELATED DOCUMENTS
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DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161) Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010)
CA B
4 x M4 nuts
Outline Dimensions
Vishay Semiconductors
SOT-227 Generation II
Note
• Controlling dimension: millimeter
Document Number: 95423 For technical questions, contact: indmodules@vishay.com Revision: 15-Nov-10 1
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