Vishay VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series Data Sheet
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Anode
1
3
Cathode
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
I
max. 7 mA at 125 °C
RM
T
max. 175 °C
J
Diode variation Single die
E
AS
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
Vishay Semiconductors
Schottky Rectifier, 8 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
8 A
80 V, 100 V
0.58 V
7.5 mJ
(-N3 only)
DESCRIPTION
The VS-8TQ...G Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 8A
100 V
tp = 5 μs sine 850 A
8 Apk, TJ = 125 °C 0.58 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-8TQ080GPbF VS-8TQ080G-N3 VS-8TQ100GPbF VS-8TQ100G-N3 UNITS
Maximum DC reverse
voltage
Maximum working
peak reverse voltage
V
V
R
RWM
80 80 100 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
Revision: 11-Oct-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 157 °C, rectangular waveform 8
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 230
TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
1
maximum VA = 1.5 x VR typical
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Following any rated load
condition and with rated
V
applied
RRM
Document Number: 94263
850
0.50 A
A
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
8 A
Maximum forward voltage drop
See fig. 1
V
FM
16 A 0.88
(1)
8 A
16 A 0.69
Maximum reverse leakage curent
See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
(1)
T
S
TJ = 25 °C
T
= 125 °C 7
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 500 pF
Measured lead to lead 5 mm from package body 8 nH
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC
, T
T
J
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased 0.50
Vishay Semiconductors
0.72
0.58
0.28
R
10 000 V/µs
- 55 to 175 °C
2.0
2g
0.07 oz.
kgf · cm
(lbf · in)
8TQ080G
8TQ100G
V
mA
°C/W
Revision: 11-Oct-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94263
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-8TQ...GPbF Series, VS-8TQ...G-N3 Series
Vishay Semiconductors
1000
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 2.20.8 1.2
TJ = 175 °C
T
= 125 °C
J
= 25 °C
T
J
0.4 1.8
0.2 0.6 1.0 1.4 1.6 2.0
VFM - Forward Voltage Drop (V)
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
1
0.1
0.01
- Reverse Current (µA)
R
0.001
I
0.0001
0
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
20 60 80 10040
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
10
20 60 80
0 40 100
50
30
70 90
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
1
- Thermal Impedance (°C/W)
thJC
Z
0.1
0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
t1 - Rectangular Pulse Duration (s)
110
1
Fig. 4 - Maximum Thermal Impedance Z
Revision: 11-Oct-11
For technical questions within your region: DiodesAmericas@vishay.com
3
Characteristics
thJC
Document Number: 94263
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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