D2PAK
PRODUCT SUMMARY
I
F(AV)
V
R
N/C
VS-8TQ080SPbF, VS-8TQ100SPbF
Schottky Rectifier, 8 A
FEATURES
• 175 °C TJ operation
Base
cathode
2
1
8 A
80 V/100 V
3
Anode
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
Vishay High Power Products
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 8 A
Range 80/100 V
tp = 5 μs sine 850 A
8 Apk, TJ = 125 °C 0.58 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-8TQ080SPbF VS-8TQ100SPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
80 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 94266 For technical questions, contact: diodestech@vishay.com
Revision: 15-Mar-10 1
I
F(AV)
I
FSM
AS
AR
50 % duty cycle at TC = 157 °C, rectangular waveform 8 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 230
TJ = 25 °C, IAS = 0.50 A, L = 60 mH 7.50 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
850
A
0.50 A
www.vishay.com
VS-8TQ080SPbF, VS-8TQ100SPbF
Vishay High Power Products
Schottky Rectifier, 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
8 A
Maximum forward voltage drop
See fig. 1
V
FM
16 A 0.88
(1)
8 A
16 A 0.69
Maximum reverse leakage current
See fig. 2
I
RM
Maximum junction capacitance C
Typical series inductance L
TJ = 25 °C
(1)
T
= 125 °C 7
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 500 pF
T
Measured lead to lead 5 mm from package body 8 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.72
0.58
0.55
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
T
, T
J
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 175 °C
2.0
2g
0.07 oz.
kgf · cm
(lbf · in)
2
PAK
8TQ080S
8TQ100S
V
mA
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94266
2 Revision: 15-Mar-10