Vishay VS-8STH06FP Data Sheet
K
VS-8STH06FP
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
3L TO-220 FULL-PA
PRODUCT SUMMARY
Package 3L TO-220FP
I
F(AV)
V
R
V
at I
F
F
t
(typ.) See Recovery table
rr
T
max. 175 °C
J
Diode variation Doubler
12
8 A
600 V
2.4 V
®
FEATURES
• Hyperfast recovery time, extremely low Qrr
• 175 °C maximum operating junction temperature
• High frequency PFC CCM operation
• Low leakage current
• Halogen-free according to IEC 61249-2-21 definition
3
• Designed and qualified for industrial level
DESCRIPTION
VS-8STH06FP 600 V series are the state of the art
tandem hyperfast recovery rectifiers: excellent switching
performance and extremely low forward voltage drop trade
off is overcome, boosting overall application performance.
Specially designed for CCM PFC application, these devices
show incomparable performance in every current intensive
hard switching application.
Optimized reverse recovery stored charge enables
downsizing of boosting switch and cooling system,
increased operating frequency make possible use of smaller
reactive elements. Cost effective PFC application is then
possible with high efficiency over wide input voltage range
and loading factor.
Plastic insulated package features easy mounting together
with not insulated parts.
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
DC forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
J
RRM
FSM
, T
F
50 % duty cycle, rect. waveforms, TC = 93 °C 8
TC = 25 °C 100
Stg
600 V
A
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
,
V
BR
V
R
IR = 100 μA 600 - -
R
IF = 8 A - 2.1 2.4
I
F
T
= 8 A, TJ = 125 °C - 1.7 2
F
I
= 8 A, TJ = 150 °C - 1.6 1.8
F
VR = VR rated - < 1 10
= 125 °C, VR = VR rated - 7 80
J
T
= 150 °C, VR = VR rated - 27 100
J
VR = 600 V - 12 - pF
V
μAT
Document Number: 94554 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Aug-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-8STH06FP
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = - 50 A/μs, VR = 30 V - - 25
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 35 -
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 4.6 5.5
J
= 8 A
I
F
dI
/dt = - 200 A/μs
F
V
= 390 V
R
-19-
TJ = 25 °C - 26 -
T
= 125 °C - 84 -
J
THERMAL - MECHANICAL SPECIFICATIONS FOR BOTH DIODES
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style 3L TO-220 FULL-PAK 8STH06FP
, T
T
J
Stg
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
- 55 - 175 °C
-4.14.8
°C/W
-0.2-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94554
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Aug-10
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1
10
100
Tj = 25°C
Tj = 125°C
Tj = 175°C
Tj = 150°C
Reverse Voltage - VR (V)
Junction Capacitance - C
T
(pF)
0 100 200 300 400 500 600
1
10
100
VS-8STH06FP
Hyperfast Rectifier, 8 A FRED Pt
1000
100
(μA)
R
0.1
Reverse Current - I
0.01
0.001
175°C
10
1
0 100 200 300 400 500 600
Fig. 2 - Typical Values of Reverse Current vs.
®
Vishay Semiconductors
150°C
125°C
25°C
Reverse Voltage - VR (V)
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
(°C/W)
thJC
1
0.1
Single Pulse
(Thermal Resistance)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Thermal Impedance Z
0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94554 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-Aug-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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