Vishay VS-8EWS..SPbF Series Data Sheet

VS-8EWS..SPbF Series

A

1

2

3

D-PAK

www.vishay.com

Vishay Semiconductors

High Voltage Surface Mount Input Rectifier Diode, 8 A

FEATURES

Base

cathode

+

2

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Material categorization: 
For definitions of compliance please see

www.vishay.com/doc?99912

13

--

node

Anode

APPLICATIONS

• Input rectification

• Vishay Semiconductors switches and output rectifiers

PRODUCT SUMMARY

Package D-PAK (TO-252AA)

I

F(AV)

V

R

V

at I

F

F

I

FSM

T

max. 150 °C

J

Diode variation Single die

8 A

800 V, 1200 V

1.1 V

150 A

which are available in identical package outlines

DESCRIPTION

The 8EWS..SPbF rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.

The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

NEMA FR-4 or G10 glass fabric-based
epoxy with 4 oz. (140 μm) copper

= 15 °C/W 2.5 2.8

thCA

Aluminum IMS with heatsink, 

= 5 °C/W

R

thCA

Note

= 55 °C, TJ = 125 °C, footprint 300 mm

•T

A

2

1.2 1.6

5.5 6.5

AAluminum IMS, R

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Sinusoidal waveform at TC = 116 °C 8 A

800/1200 V

150 A

8 A, TJ = 25 °C 1.10 V

-55 to 150 °C

VOLTAGE RATINGS

PART NUMBER

8EWS08SPbF 800 900

8EWS12SPbF 1200 1300

Revision: 18-Dec-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PEAK REVERSE VOLTAGE

V

1

, MAXIMUM

V

RRM

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

, [e-mail], [e-mail]

V

Document Number: 94349

I

RRM

AT 150 °C

mA

0.5

VS-8EWS..SPbF Series

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle 
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 8

10 ms sine pulse, rated V

applied 125

RRM

10 ms sine pulse, no voltage reapplied 150

10 ms sine pulse, rated V

applied 78

RRM

10 ms sine pulse, no voltage reapplied 110

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

F(TO)

RM

8 A, TJ = 25 °C 1.1 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 0.50

J

V

= Rated V

R

Vishay Semiconductors

20 m

0.82 V

0.05

RRM

A

A

mA

2

s

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage 
temperature range

Soldering temperature T
Maximum thermal resistance,

junction to case
Typical thermal resistance, 

junction to ambient (PCB mount)

Approximate weight

Marking device Case style D-PAK (TO-252AA) 8EWS12S

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

, T

T

J

Stg

S

DC operation 2.5

R

thJC

62

R

thJA (1)

-55 to 150

260

1g

0.03 oz.

°C

°C/W

Revision: 18-Dec-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

2

, [e-mail], [e-mail]

Document Number: 94349

www.vishay.com

90

80

130

140

150

120

110

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

2

10

12

468

0

30°

60°

90°

120°

180°

8EWS. Series
R

thJC

(DC) = 2.5 °C/W

90

140

150

130

120

110

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

4268

16

18

10 12 14

0

DC

30°

60°

90°

120°

180°

8EWS. Series
R

thJC

(DC) = 2.5 °C/W

Ø

Conduction period

8

6

4

2

0

10

12

14

16

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

4268

10

0

RMS limit

180°
120°

90°
60°
30°

8EWS. Series
T

J

= 150 °C

Conduction angle

Ø

8

6

4

2

0

10

12

14

16

18

20

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

246

14

16

81012

0

DC
180°
120°

90°
60°
30°

RMS limit

8EWS. Series
T

J

= 150 °C

Ø

Conduction period

Peak Half Sine Wave

Forward Current (A)

Number of Equal Amplitude

Half Cycle Current Pulses (N)

110100

30

40

50

60

70

80

90

100

110

120

130

140

VS-8EWS08S .. Series

At any rated load condition and with
rated V

rrm

applied following surge.

Initial T

J

= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Peak Half Sine Wave

Forward Current (A)

Pulse Train Duration (s)

0.01 0.1 1 10

20

40

60

80

100

120

140

160

Maximum non-repetitive surge current
versus pulse train duration.

Initial T

J

= TJ max.

No voltage reapplied
Rated V

rrm

reapplied

VS-8EWS08S .. Series

VS-8EWS..SPbF Series

Vishay Semiconductors

Fig. 1 - Current Rating Characteristics

Fig. 2 - Current Rating Characteristics

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 3 - Forward Power Loss Characteristics

Revision: 18-Dec-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 6 - Maximum Non-Repetitive Surge Current

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

, [e-mail], [e-mail]

Document Number: 94349