Vishay VS-8EWF..SPbF Soft Recovery Series Data Sheet

VS-8EWF..SPbF Soft Recovery Series

A

1

2

3

D-PAK

www.vishay.com

Vishay Semiconductors

Surface Mount Fast Soft Recovery Rectifier Diode, 8 A

Base

cathode

+

2

FEATURES

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Material categorization: 
For definitions of compliance please see

13

--

node

Anode

www.vishay.com/doc?99912

APPLICATIONS

• Output rectification and freewheeling diode in inverters,

PRODUCT SUMMARY

Package D-PAK (TO-252AA)

I

F(AV)

V

R

V

at I

F

F

I

FSM

t

rr

T

max. 150 °C

J

Diode variation Single die

Snap factor 0.6

8 A

1000 V, 1200 V

1.3 V

150 A

80 ns

choppers and converters

• Input rectifications where severe restrictions on
conducted EMI should be met

DESCRIPTION

The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.

The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

t

rr

T

RRM

F

J

Sinusoidal waveform 8 A

1000/1200 V

150 A

8 A, TJ = 25 °C 1.3 V

1 A, 100 A/µs 80 ns

Range -40 to 150 °C

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

REVERSE VOLTAGE

V

8EWF10SPbF 1000 1100

8EWF12SPbF 1200 1300

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

4

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

Revision: 18-Dec-13

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1100 A2s

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F(AV)

I

FSM

TC = 94 °C, 180° conduction half sine wave 8

10 ms sine pulse, rated V

applied 125

RRM

10 ms sine pulse, no voltage reapplied 150

10 ms sine pulse, rated V

applied 78

RRM

10 ms sine pulse, no voltage reapplied 110

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A

2

A

s

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VS-8EWF..SPbF Soft Recovery Series

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

8 A, TJ = 25 °C 1.3 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 4

J

V

= Rated V

R

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

Reverse recovery charge Q

rr

rr

rr

IF at 8 Apk
25 A/μs
T

= 25 °C

J

270 ns

4.2 A

1μC

Snap factor S0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and
storage temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
junction to ambient (PCB mount)

Soldering temperature T

Approximate weight

Marking device Case style D-PAK (TO-252AA) 8EWF12S

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

Stg

R

DC operation 2.5

thJC

(1)

R

thJA

S

For 10 seconds 260 °C

Vishay Semiconductors

25.6 m

0.93 V

RRM

0.1

I

FM

t

atb

di
dt

-40 to 150 °C

50

1g

0.03 oz.

t

rr

mA

I

rr

°C/W

t

Q

rr

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0

18

0

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

10

14

2

6

14

2

6

16

12

84

180°
120°
90°
60°
30°

DC

Ø

Conduction period

8EWF..S Series
T

J

= 150 °C

RMS limit

12

10

8

4

VS-8EWF..SPbF Soft Recovery Series

Vishay Semiconductors

150

140

130

120

110

100

90

Temperature (°C)

Maximum Allowable Case

70

60

0

150

140

130

120

110

100

90

Temperature (°C)

80

Maximum Allowable Case

70

60

04

8EWF.. S Series

(DC) = 2.5 °C/W

R

thJC

Ø

Conduction angle

30°

90°

120°

7

180°

86

60°

18029

3

5

4

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

8EWF..S Series

(DC) = 2.5 °C/W

R

thJC

Ø

Conduction period

30°

60°

90°

120°

6

2

8

180°

DC

1210

14

140

130

120

110

100

90

80

70

60

Forward Current (A)

Peak Half Sine Wave

50

40

30

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with

rated Vrrm applied following surge.

VS-8EWF..S .. Series

1 10 100

Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

12

10

8

6

4

Power Loss (W)

2

Maximum Average Forward

0

180°
120°
90°
60°
30°

0

231

Average Forward Current (A)

4

RMS limit

Ø

Conduction angle

8EWF..S Series
T

= 150 °C

J

5

7

6

9

8

Fig. 3 - Forward Power Loss Characteristics

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3

170

150

130

110

90

70

50

Forward Current (A)

Peak Half Sine Wave

30

10

0.01 0.1 1 10

Maximum non-repetitive surge current

VS-8EWF..S .. Series

versus pulse train duration.

Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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0.6

0 40 120 200

t

rr

- Typical Reverse
Recovery Time (µs)

dI/dt - Rate of Fall of Forward Current (A/µs)

0.2

160

0.4

0

80

8EWF..S Series

T

J

= 25 °C

IFM = 10 A

I

FM

= 1 A

I

FM

= 5 A

I

FM

= 2 A

I

FM

= 8 A

0.1

0.3

0.5

VS-8EWF..SPbF Soft Recovery Series

Vishay Semiconductors

1000

TJ = 25 °C

= 150 °C

T

100

10

Instantaneous Forward Current (A)

J

1

0.5 2.0 3.0

1.5 3.5

8EWF..S Series

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

2.0
8EWF..S Series

= 25 °C

T

J

1.6

1.2

0.8

- Typical Reverse

rr

Q

Recovery Charge (µC)

0.4

4.5

4.01.0 2.5

0

0

80 120 200

IFM = 10 A

IFM = 8 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

16040

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 10 - Recovery Charge Characteristics, T

5

8EWF..S Series

= 150 °C

T

J

4

3

IFM = 10 A

IFM = 8 A

= 25 °C

J

Fig. 8 - Recovery Time Characteristics, T

0.8

8EWF..S Series

= 150 °C

T

J

0.6

0.4

- Typical Reverse

rr

0.2

Recovery Time (µs)

t

0

0 80 120 160 200

40

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

= 25 °C

J

IFM = 10 A
I

= 8 A

FM

I

= 5 A

FM

= 2 A

I

FM

= 1 A

I

FM

= 150 °C

J

2

- Typical Reverse

rr

Q

Recovery Charge (µC)

1

0

0 160

40 200

80 120

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

20

8EWF..S Series

= 25 °C

T

J

16

12

8

- Typical Reverse

rr

I

Recovery Current (A)

4

0

40

0 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, T

IFM = 5 A

IFM = 2 A

IFM = 1 A

IFM = 10 A

IFM = 8 A

IFM = 5 A

IFM = 2 A

IFM = 1 A

= 150 °C

J

= 25 °C

J

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25

10

0

0 80 200

I

rr

- Typical Reverse
Recovery Current (A)

dI/dt - Rate of Fall of Forward Current (A/µs)

20

5

15

40 120 160

8EWF..S Series
T

J

= 150 °C

IFM = 10 A
I

FM

= 8 A

I

FM

= 5 A

I

FM

= 2 A

I

FM

= 1 A

VS-8EWF..SPbF Soft Recovery Series

Vishay Semiconductors

Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

10

1

Single pulse

0.1

- Transient Thermal Impedance (°C/W)

0.0001 0.001 0.01 0.1

thJC

Z

Square Wave Pulse Duration (s)

Fig. 14 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Characteristics

thJC

Steady state value

(DC operation)

8EWF..S Series

1

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2 - Current rating (8 = 8 A)

3 - Circuit configuration:

E = Single diode

4 - Package:

W = D-PAK

5 - Type of silicon:

F = Fast soft recovery rectifier

6 - Voltage code x 100 = V

RRM

7 - S = Surface mountable

8 -

TR = Tape and reel

TRR = Tape and reel (right oriented)

TRL = Tape and reel (left oriented)

9 -

None = Standard production

PbF = Lead (Pb)-free

10 = 1000 V
12 = 1200 V

Device code

51 32 4 6 7 8 9

8VS- E W F 12 S TR PbF

1 - Vishay Semiconductors product

ORDERING INFORMATION TABLE

VS-8EWF..SPbF Soft Recovery Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95016

Part marking information www.vishay.com/doc?95059

Packaging information www.vishay.com/doc?95033

SPICE model www.vishay.com/doc?95552

Revision: 18-Dec-13

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Ø 1

E

(5)

b3

(3)

0.010

CAB

L3 (3)

B

A

C

H

C

L2

D (5)

L4

b

2 x

e

b2

(2) L5

1

2

3

4

Ø 2

A

c2

A

A

H

Seating
plane

c

Detail “C”

(7)

Seating

plane

A1

Detail “C”

Rotated 90 °CW

Scale: 20:1

(L1)

C

C

L

Ø

Gauge

plane

Lead tip

M

0.010

CAB

M

3241

E1

D1

MIN.

0.265
(6.74)

MIN.

0.245
(6.23)

MIN.

0.089
(2.28)

MIN.

0.06

(1.524)

0.488 (12.40)

0.409 (10.40)

0.093 (2.38)

0.085 (2.18)

Pad layout

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

D-PAK (TO-252AA)

SYMBOL

A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410

b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.

b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC

c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040

D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°

E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension uncontrolled in L5

(3)

Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad

(4)

Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip

(5)

Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(6)

Dimension b1 and c1 applied to base metal only

(7)

Datum A and B to be determined at datum plane H

(8)

Outline conforms to JEDEC outline TO-252AA

Revision: 05-Dec-12

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC

b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070

c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3

D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2

E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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