Vishay VS-8EWF..SPbF Soft Recovery Series Data Sheet

VS-8EWF..SPbF Soft Recovery Series

A

1

2

3

D-PAK

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Vishay Semiconductors

Surface Mount Fast Soft Recovery Rectifier Diode, 8 A

Base

cathode

+

2

FEATURES

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Material categorization: 
For definitions of compliance please see

13

--

node

Anode

www.vishay.com/doc?99912

APPLICATIONS

• Output rectification and freewheeling diode in inverters,

PRODUCT SUMMARY

Package D-PAK (TO-252AA)

I

F(AV)

V

R

V

at I

F

F

I

FSM

t

rr

T

max. 150 °C

J

Diode variation Single die

Snap factor 0.6

8 A

1000 V, 1200 V

1.3 V

150 A

80 ns

choppers and converters

• Input rectifications where severe restrictions on
conducted EMI should be met

DESCRIPTION

The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.

The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

t

rr

T

RRM

F

J

Sinusoidal waveform 8 A

1000/1200 V

150 A

8 A, TJ = 25 °C 1.3 V

1 A, 100 A/µs 80 ns

Range -40 to 150 °C

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

REVERSE VOLTAGE

V

8EWF10SPbF 1000 1100

8EWF12SPbF 1200 1300

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

4

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

Revision: 18-Dec-13

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1100 A2s

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F(AV)

I

FSM

TC = 94 °C, 180° conduction half sine wave 8

10 ms sine pulse, rated V

applied 125

RRM

10 ms sine pulse, no voltage reapplied 150

10 ms sine pulse, rated V

applied 78

RRM

10 ms sine pulse, no voltage reapplied 110

1

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A

2

A

s

Document Number: 94109

VS-8EWF..SPbF Soft Recovery Series

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

8 A, TJ = 25 °C 1.3 V

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 4

J

V

= Rated V

R

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

Reverse recovery charge Q

rr

rr

rr

IF at 8 Apk
25 A/μs
T

= 25 °C

J

270 ns

4.2 A

1μC

Snap factor S0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and
storage temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
junction to ambient (PCB mount)

Soldering temperature T

Approximate weight

Marking device Case style D-PAK (TO-252AA) 8EWF12S

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

Stg

R

DC operation 2.5

thJC

(1)

R

thJA

S

For 10 seconds 260 °C

Vishay Semiconductors

25.6 m

0.93 V

RRM

0.1

I

FM

t

atb

di
dt

-40 to 150 °C

50

1g

0.03 oz.

t

rr

mA

I

rr

°C/W

t

Q

rr

Revision: 18-Dec-13

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Document Number: 94109

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0

18

0

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

10

14

2

6

14

2

6

16

12

84

180°
120°
90°
60°
30°

DC

Ø

Conduction period

8EWF..S Series
T

J

= 150 °C

RMS limit

12

10

8

4

VS-8EWF..SPbF Soft Recovery Series

Vishay Semiconductors

150

140

130

120

110

100

90

Temperature (°C)

Maximum Allowable Case

70

60

0

150

140

130

120

110

100

90

Temperature (°C)

80

Maximum Allowable Case

70

60

04

8EWF.. S Series

(DC) = 2.5 °C/W

R

thJC

Ø

Conduction angle

30°

90°

120°

7

180°

86

60°

18029

3

5

4

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

8EWF..S Series

(DC) = 2.5 °C/W

R

thJC

Ø

Conduction period

30°

60°

90°

120°

6

2

8

180°

DC

1210

14

140

130

120

110

100

90

80

70

60

Forward Current (A)

Peak Half Sine Wave

50

40

30

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with

rated Vrrm applied following surge.

VS-8EWF..S .. Series

1 10 100

Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

12

10

8

6

4

Power Loss (W)

2

Maximum Average Forward

0

180°
120°
90°
60°
30°

0

231

Average Forward Current (A)

4

RMS limit

Ø

Conduction angle

8EWF..S Series
T

= 150 °C

J

5

7

6

9

8

Fig. 3 - Forward Power Loss Characteristics

Revision: 18-Dec-13

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

170

150

130

110

90

70

50

Forward Current (A)

Peak Half Sine Wave

30

10

0.01 0.1 1 10

Maximum non-repetitive surge current

VS-8EWF..S .. Series

versus pulse train duration.

Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 94109

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