Vishay VS-8ETU04PbF Data Sheet
VS-8ETU04PbF
TO-220AC
Vishay Semiconductors
Ultrafast Rectifier, 8 A FRED Pt
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
typ. See Recovery table
t
rr
T
max. 175 °C
J
Diode variation Single die
cathode
1
Cathode
400 V
Base
8 A
1.3 V
2
Anode
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
3
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
FRED Pt® series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Repetitive peak forward current I
Operating junction and storage temperatures T
F(AV)
FSM
FRM
, T
J
RRM
TC = 155 °C 8
TC = 25 °C 100
Stg
400 V
ANon-repetitive peak surge current I
16
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 400 - -
R
IF = 8 A - 1.19 1.3
F
I
= 8 A, TJ = 150 °C - 0.94 1.0
F
VR = VR rated - 0.2 10
T
= 150 °C, VR = VR rated - 20 500
J
VR = 400 V - 14 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
μA
Document Number: 94030 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
www.vishay.com/doc?91000
VS-8ETU04PbF
Vishay Semiconductors
Ultrafast Rectifier, 8 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μA, VR = 30 V - 35 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 67 -
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 6.3 -
J
= 8 A
I
F
/dt = 200 A/μs
dI
F
V
= 200 V
R
TJ = 25 °C - 60 -
T
= 125 °C - 210 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-220AC 8ETU04
-1.82
R
thJC
R
R
thJA
thCS
Typical socket mount - - 50
Mounting surface, flat, smooth
and greased
®
-43-
-0.5-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94030
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Ultrafast Rectifier, 8 A FRED Pt
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
VS-8ETU04PbF
®
Vishay Semiconductors
100
10
1
- Instantaneous
F
I
Forward Current (A)
0.1
0 2.51.0 1.5
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.5 2.0
VF - Forward Voltage Drop (V)
1000
100
10
1
0.1
0.01
- Reverse Current (µA)
R
I
0.001
0.0001
0 100 200
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
300
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
400
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0 100 200 300 400
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94030 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
thJC
Characteristics
www.vishay.com/doc?91000
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