Vishay VS-8ETU04SPbF, VS-8ETU04-1PbF Data Sheet

V
VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay High Power Products
S-8ETU04SPbF
Base
cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
Ultrafast Rectifier, 8 A FRED Pt
FEATURES
VS-8ETU04-1PbF
2
1
N/C
TO-262
3
Anode
60 ns
8 A
400 V
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
Vishay HPP’s FRED Pt® series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Repetitive peak forward current I
Operating junction and storage temperatures T
F(AV)
FSM
FRM
, T
J
RRM
TC = 155 °C 8
TC = 25 °C 100
Stg
400 V
ANon-repetitive peak surge current I
16
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94031 For technical questions, contact: diodestech@vishay.com Revision: 11-Mar-10 1
,
V
BR
V
R
IR = 100 μA 400 - -
R
IF = 8 A - 1.19 1.3
F
I
= 8 A, TJ = 150 °C - 0.94 1.0
F
VR = VR rated - 0.2 10
T
= 150 °C, VR = VR rated - 20 500
J
VR = 400 V - 14 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
μA
www.vishay.com
VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay High Power Products
Ultrafast Rectifier,
8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 35 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 67 -
J
TJ = 25 °C - 2.8 -
T
= 125 °C - 6.3 -
J
= 8 A
I
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
-43-
TJ = 25 °C - 60 -
T
= 125 °C - 210 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range
Thermal resistance, junction to case R
Thermal resistance, junction to ambient R
Thermal resistance, case to heatsink R
Weight
Mounting torque
Marking device
, T
T
J
Stg
-1.82.0
thJC
thJA
thCS
Typical socket mount - - 50
Mounting surface, flat, smooth and greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
PAK 8ETU04S
-
Case style TO-262 8ETU04-1
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94031
2 Revision: 11-Mar-10
VS-8ETU04SPbF, VS-8ETU04-1PbF
100
10
1
- Instantaneous
F
I
Forward Current (A)
0.1
0 2.51.0 1.5
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.5 2.0
VF - Forward Voltage Drop (V)
Ultrafast Rectifier,
8 A FRED Pt
®
1000
100
0.01
- Reverse Current (µA)
R
I
0.001
0.0001
10
0.1
Vishay High Power Products
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
0 100 200
VR - Reverse Voltage (V)
TJ = 100 °C
TJ = 25 °C
300
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
400
100
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0 100 200 300 400
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t
1/t2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
1
thJC
t
2
.
+ T
C
.
Document Number: 94031 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 11-Mar-10 3
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