Vishay VS-8ETL06SPbF, VS-8ETL06-1PbF Data Sheet
V
VS-8ETL06SPbF, VS-8ETL06-1PbF
Vishay High Power Products
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
®
S-8ETL06SPbF
Base
cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
VF (typical) 0.96 V
I
F(AV)
V
R
VS-8ETL06-1PbF
2
1
N/C
TO-262
3
Anode
8 A
600 V
FEATURES
• Benchmark ultralow forward voltage drop
• Hyperfast recovery time
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD ac-to-dc power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 160 °C 8
TJ = 25 °C 175
FM
Stg
600 V
ANon-repetitive peak surge current I
16
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94029 For technical questions, contact: diodestech@vishay.com
Revision: 11-Mar-10 1
,
V
BR
V
R
IR = 100 μA 600 - -
R
IF = 8 A - 0.96 1.05
F
T
S
= 8 A, TJ = 150 °C - 0.81 0.86
I
F
VR = VR rated - 0.05 5
T
= 150 °C, VR = VR rated - 20 100
J
VR = 600 V - 17 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
μA
www.vishay.com
VS-8ETL06SPbF, VS-8ETL06-1PbF
Vishay High Power Products
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 100
= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 150 250
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 250 -
T
J
TJ = 25 °C - 15 -
T
= 125 °C - 20 -
J
= 8 A
I
F
dI
/dt = 200 A/μs
F
V
= 390 V
R
- 170 -
TJ = 25 °C - 1.3 -
T
= 125 °C - 2.6 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
, T
T
J
Stg
R
-1.42
thJC
R
Typical socket mount - - 70
thJA
Mounting surface, flat, smooth and
R
thCS
greased
- 65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK 8ETL06S
-
Case style TO-262 8ETL06-1
12
(10)
kgf · cm
(lbf · in)
ns
A
μC
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94029
2 Revision: 11-Mar-10
VS-8ETL06SPbF, VS-8ETL06-1PbF
100
10
Current (A)
1
- Instantaneous Forward
F
I
0.1
V
- Forward Voltage Drop (V)
F
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
100
10
TJ = 175 °C
= 150 °C
T
J
T
= 25 °C
J
1.20.80.4
1.6
2.0
0.1
- Reverse Current (µA)
0.01
R
I
0.001
Vishay High Power Products
®
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
1
200 400
VR - Reverse Voltage (V)
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
300100
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
(pF)
600500
TJ = 25 °C
Junction Capacitance
-
T
C
10
0 200 400 500 600
V
R
300100
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
1
thJC
t
2
+ T
C
Document Number: 94029 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 11-Mar-10 3
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