Vishay VS-8ETL06PbF, VS-8ETL06FPPbF Data Sheet
Ultralow VF Hyperfast Rectifier for
TO-220AC TO-220 FULL-PAK
Anode
1
3
Cathode
Base
cathode
2
Anode
1
3
Cathode
VS-8ETL06PbF VS-8ETL06FPPbF
Discontinuous Mode PFC, 8 A FRED Pt
PRODUCT SUMMARY
Package TO-220AC, TO-220FP
I
F(AV)
V
R
V
at I
F
F
t
typ. 60 ns
rr
max. 175 °C
T
J
Diode variation Single die
8 A
600 V
1.05 V
VS-8ETL06PbF, VS-8ETL06FPPbF
Vishay Semiconductors
®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
= 2500 V
INS
RMS
)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Repetitive peak forward current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94028 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
RRM
FULL-PAK T
,
V
BR
V
R
F
R
S
IR = 100 μA 600 - -
IF = 8 A - 0.96 1.05
I
= 8 A, TJ = 150 °C - 0.81 0.86
F
VR = VR rated - 0.05 5
T
= 150 °C, VR = VR rated - 20 100
J
VR = 600 V - 17 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
F(AV)
FSM
FM
, T
J
This datasheet is subject to change without notice.
600 V
TC = 160 °C
= 142 °C
C
TJ = 25 °C 175
Stg
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
8
A
16
- 65 to 175 °C
V
μA
www.vishay.com/doc?91000
VS-8ETL06PbF, VS-8ETL06FPPbF
1
10
TJ = 175 °C
T
J
= 150 °C
T
J
= 25 °C
0.4
0.8
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
1.2 1.6
2.0
0.1
Vishay Semiconductors
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 100
= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 150 250
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 250 -
T
J
TJ = 25 °C - 15 -
T
= 125 °C - 20 -
J
= 8 A
I
F
dI
/dt = 200 A/μs
F
V
= 390 V
R
- 170 -
TJ = 25 °C - 1.3 -
T
= 125 °C - 2.6 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
(FULL-PAK) - 3.4 4.3
T
, T
J
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth
and greased
- 65 - 175 °C
-1.42
-0.5-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Case style TO-220AC 8ETL06
Case style TO-220 FULL-PAK 8ETL06FP
ns
A
μC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94028
2 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
10
1
0.1
- Reverse Current (µA)
0.01
R
I
0.001
100 200 400
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
300
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
600500
VS-8ETL06PbF, VS-8ETL06FPPbF
100
0 200 400 500 600
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
10 100
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Ultralow VF Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Vishay Semiconductors
®
Fig. 4 - Maximum Thermal Impedance Z
Document Number: 94028 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
thJC
Characteristics (FULL-PAK)
thJC
Characteristics
www.vishay.com/doc?91000
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