Vishay VS-8ETH06SPbF, VS-8ETH06-1PbF Data Sheet

V

VS-8ETH06SPbF, VS-8ETH06-1PbF

Vishay High Power Products

S-8ETH06SPbF

Base

cathode

2

1

N/C

D2PAK

3

Anode

PRODUCT SUMMARY

trr (typical) 18 ns

I

F(AV)

V

R

Hyperfast Rectifier, 8 A FRED Pt

FEATURES

VS-8ETH06-1PbF

2

1

N/C

TO-262

3

Anode

8 A

600 V

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the ac-to-dc section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Peak repetitive reverse voltage V

Average rectified forward current I

Peak repetitive forward current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

J

RRM

TC = 144 °C 8

TJ = 25 °C 90

FM

Stg

600 V

ANon-repetitive peak surge current I

16

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94027 For technical questions, contact: [e-mail]
Revision: 11-Mar-10 1

,

V

BR

V

R

IR = 100 μA 600 - -

R

IF = 8 A - 2.0 2.4

F

I

= 8 A, TJ = 150 °C - 1.3 1.8

F

VR = VR rated - 0.3 50

T

= 150 °C, VR = VR rated - 55 500

J

VR = 600 V - 17 - pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

V

μA

www.vishay.com

VS-8ETH06SPbF, VS-8ETH06-1PbF

Vishay High Power Products

Hyperfast Rectifier,

8 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22

= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 25

I

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

rr

RRM

rr

F

T

= 25 °C

J

= 125 °C - 40 -

T

J

TJ = 25 °C - 2.4 -

T

= 125 °C - 4.8 -

J

= 8 A

I

F

dI

/dt = 200 A/μs

F

= 390 V

V

R

-25-

TJ = 25 °C - 25 -

T

= 125 °C - 120 -

J

-33-ns

-12- A

-220- nC

TJ = 125 °C

= 8 A

I

F

dI

/dt = 600 A/μs

F

= 390 V

V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque 6.0 (5.0) -

Marking device

, T

T

J

Stg

R

-1.42

thJC

R

Typical socket mount - - 70

thJA

Mounting surface, flat, smooth

R

thCS

and greased

- 65 - 175 °C

-0.5-

-2.0- g

-0.07- oz.

2

Case style D

PAK 8ETH06S

Case style TO-262 8ETH06-1

12

(10)

kgf · cm

(lbf · in)

ns

A

nC

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94027

2 Revision: 11-Mar-10

VS-8ETH06SPbF, VS-8ETH06-1PbF

100

10

1

- Instantaneous

F

I

Forward Current (A)

0.1

0

TJ = 175 °C

= 150 °C

T

J

= 25 °C

T

J

1

23

VFM - Forward Voltage Drop (V)

Hyperfast Rectifier,

8 A FRED Pt

4

®

1000

- Reverse Current (µA)

R

I

0.001

100

10

0.1

0.01

Vishay High Power Products

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

1

0 200 400

100

VR - Reverse Voltage (V)

TJ = 100 °C

TJ = 25 °C

300

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

600500

100

- Junction Capacitance (pF)

T

TJ = 25 °C

C

10

0 200 400 500 600

300100

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

P

DM

D = 0.50

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

t

1

thJC

t

2

.

+ T

C

.

Document Number: 94027 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-10 3