Vishay VS-8ETH06PbF, VS-8ETH06FPPbF Data Sheet

VS-8ETH06PbF, VS-8ETH06FPPbF

TO-220AC TO-220 FULL-PAK

Anode

1

3

Cathode

Base

cathode

2

Anode

1

3

Cathode

VS-8ETH06PbF VS-8ETH06FPPbF

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt

PRODUCT SUMMARY

Package TO-220AC, TO-220FP

I

F(AV)

V

R

V

at I

F

F

typ. 18 ns

t

rr

T

max. 175 °C

J

Diode variation Single die

8 A

600 V

2.4 V

®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Fully isolated package (V

• UL E78996 pending

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.

The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.

These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.

Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

= 2500 V

INS

RMS

)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Repetitive peak reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Repetitive peak forward current I

Operating junction and storage temperatures T

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

RRM

FULL-PAK T

FULL-PAK 100

,

V

BR

V

R

F

R

T

S

IR = 100 μA 600 - -

IF = 8 A - 2.0 2.4

I

F

VR = VR rated - 0.3 50

T

J

VR = 600 V - 17 - pF

Measured lead to lead 5 mm from package body - 8.0 - nH

This datasheet is subject to change without notice.

F(AV)

FSM

FM

, T

J

= 8 A, TJ = 150 °C - 1.3 1.8

= 150 °C, VR = VR rated - 55 500

, [e-mail], [e-mail] 1

TC = 144 °C

= 108 °C

C

TJ = 25 °C 90

Stg

600 V

8

A

16

- 65 to 175 °C

V

μA

www.vishay.com/doc?91000

VS-8ETH06PbF, VS-8ETH06FPPbF

1

10

TJ = 175 °C
T

J

= 150 °C

T

J

= 25 °C

0

1

VF - Forward Voltage Drop (V)

I

F

- Instantaneous
Forward Current (A)

100

23

4

0.1

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22

= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 25

I

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

rr

RRM

rr

F

T

= 25 °C

J

= 125 °C - 40 -

T

J

TJ = 25 °C - 2.4 -

T

= 125 °C - 4.8 -

J

= 8 A

I

F

dI

/dt = 200 A/μs

F

V

= 390 V

R

TJ = 25 °C - 25 -

T

= 125 °C - 120 -

J

= 8 A

I

F

TJ = 125 °C

dI

/dt = 600 A/μs

F

V

= 390 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device

(FULL-PAK) - 3.4 4.3

, T

T

J

Stg

R

thJC

R

thJA

R

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth
and greased

Case style TO-220AC 8ETH06

Case style TO-220 FULL-PAK 8ETH06FP

®

-25-

-33-ns

-12- A

-220- nC

- 65 - 175 °C

-1.42

-0.5-

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

kgf · cm

(lbf · in)

ns

A

nC

°C/W

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

1000

100

10

1

0.1

- Reverse Current (µA)

R

0.01

I

0.001
0 200 400

100

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

300

VR - Reverse Voltage (V)

Reverse Voltage

, [e-mail], [e-mail] Revision: 28-Apr-11

This datasheet is subject to change without notice.

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600500

VS-8ETH06PbF, VS-8ETH06FPPbF

100

1000

0 200 400 500 600

10

VR - Reverse Voltage (V)

C

T

- Junction Capacitance (pF)

300100

TJ = 25 °C

0.01

0.1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0.01

0.1

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1

Single pulse

(thermal resistance)

10 100

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Hyperfast Rectifier, 8 A FRED Pt

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

®

Vishay Semiconductors

Fig. 4 - Maximum Thermal Impedance Z

Document Number: 94026 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 5 - Maximum Thermal Impedance Z

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This datasheet is subject to change without notice.

thJC

Characteristics (FULL-PAK)

thJC

Characteristics

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VS-8ETH06PbF, VS-8ETH06FPPbF

100 1000

Q

rr

(nC)

dIF/dt (A/µs)

400

0

IF = 16 A
I

F

= 8 A

300

200

100

50

VR = 390 V
T

J

= 125 °C

T

J

= 25 °C

350

250

150

Vishay Semiconductors

Hyperfast Rectifier, 8 A FRED Pt

®

180

170

160

150

140

130

Allowable Case Temperature (°C)

See note (1)

120

02 6 1012

I

F(AV)

Square wave (D = 0.50)

applied

Rated V

R

48

- Average Forward Current (A)

DC

Fig. 6 - Maximum Allowable Case Temperature vs.

Average Forward Current

180

160

140

120

Square wave (D = 0.50)
Rated V

100

Allowable Case Temperature (°C)

80

02 6 10 14

I

F(AV)

applied

R

See note (1)

48

- Average Forward Current (A)

DC

12

Fig. 7 - Maximum Allowable Case Temperature vs.

Average Forward Current (FULL-PAK)

20

18

16

14

12

10

8

6

4

Average Power Loss (W)

2

0

02 6 1012

DC

48

I

- Average Forward Current (A)

F(AV)

RMS limit

Fig. 8 - Forward Power Loss Characteristics

60

50

40

(ns)

rr

t

30

20

IF = 16 A

= 8 A

I

F

10

100 1000

VR = 390 V

= 125 °C

T

J

= 25 °C

T

J

dIF/dt (A/µs)

Fig. 9 - Typical Reverse Recovery Time vs. dI

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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x VFM at (I

F(AV)

REV

Fig. 10 - Typical Stored Charge vs. dI

) x R

;

thJC

/D) (see fig. 8);

F(AV)

R

, [e-mail], [e-mail] Revision: 28-Apr-11

This datasheet is subject to change without notice.

/dt

F

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VS-8ETH06PbF, VS-8ETH06FPPbF

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

Hyperfast Rectifier, 8 A FRED Pt

= 200 V

V

R

0.01 Ω

L = 70 μH

D.U.T.

®

Vishay Semiconductors

dIF/dt
adjust

G

D

IRFP250

S

Fig. 11 - Reverse Recovery Parameter Test Circuit

Document Number: 94026 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 [e-mail]

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12 - Reverse Recovery Waveform and Definitions

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This datasheet is subject to change without notice.

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VS-8ETH06PbF, VS-8ETH06FPPbF

1 - Vishay Semiconductors product

2 - Current rating (8 = 8 A)

3 - E = Single diode

4

- T = TO-220, D2PAK

5 - H = Hyperfast recovery

6 - Voltage rating (06 = 600 V)

7 - None = TO-220AC

FP = TO-220 FULL-PAK

- PbF = Lead (Pb)-free

8

Tube standard pack quantity: 50 pieces

Device code

51 32 4 6 7 8

VS- 8 E T H 06 FP PbF

Vishay Semiconductors

ORDERING INFORMATION TABLE

Hyperfast Rectifier, 8 A FRED Pt

®

LINKS TO RELATED DOCUMENTS

Dimensions

Part marking information

TO-220AC FULL-PAK www.vishay.com/doc?95005

TO-220AC FULL-PAK www.vishay.com/doc?95009

TO-220AC www.vishay.com/doc?95221

TO-220AC www.vishay.com/doc?95224

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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This datasheet is subject to change without notice.

www.vishay.com/doc?91000

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5° ± 0.5°

3.3

3.1

5° ± 0.5°

0.9

0.7

2.54 TYP.

2.54 TYP.

10.6

10.4

3.7

3.2

7.31

6.91

0.61

0.38

2.85

2.65

2.8

2.6

1.4

1.3

10°

4.8

4.6

16.0

15.8

16.4

15.4

(2 places)

R 0.7
R 0.5

Hole Ø

3.4

3.1

TYP.

1.15

1.05

13.56

13.05

Lead assignments

Diodes
1 + 2 - Cathode

3 - Anode

Conforms to JEDEC outline TO-220 FULL-PAK

DIMENSIONS in millimeters

Outline Dimensions

Vishay Semiconductors

Revision: 20-Jul-11

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1

Document Number: 95005

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DIMENSIONS in millimeters and inches

(6)

E

(7)

E2

Q

(6)

D

D1

13

L3

L4

2

A

Ø P

0.014 AB

Detail B

L

MM

C

(6)

H1

(7)

TO-220AC

B

Seating

plane

A

A

A1

Outline Dimensions

Vishay Semiconductors

123

DL1D

H1

θ

E

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes
1 + 2 - Cathode

3 - Anode

CC

Detail B

Lead tip

SYMBOL

e1

MM

0.015 AB

c

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A

A2

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 [e-mail]

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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