Vishay VS-8ETH06PbF, VS-8ETH06FPPbF Data Sheet
VS-8ETH06PbF, VS-8ETH06FPPbF
TO-220AC TO-220 FULL-PAK
Anode
1
3
Cathode
Base
cathode
2
Anode
1
3
Cathode
VS-8ETH06PbF VS-8ETH06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
PRODUCT SUMMARY
Package TO-220AC, TO-220FP
I
F(AV)
V
R
V
at I
F
F
typ. 18 ns
t
rr
T
max. 175 °C
J
Diode variation Single die
8 A
600 V
2.4 V
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
= 2500 V
INS
RMS
)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Repetitive peak forward current I
Operating junction and storage temperatures T
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94026 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
RRM
FULL-PAK T
FULL-PAK 100
,
V
BR
V
R
F
R
T
S
IR = 100 μA 600 - -
IF = 8 A - 2.0 2.4
I
F
VR = VR rated - 0.3 50
T
J
VR = 600 V - 17 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
This datasheet is subject to change without notice.
F(AV)
FSM
FM
, T
J
= 8 A, TJ = 150 °C - 1.3 1.8
= 150 °C, VR = VR rated - 55 500
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 144 °C
= 108 °C
C
TJ = 25 °C 90
Stg
600 V
8
A
16
- 65 to 175 °C
V
μA
www.vishay.com/doc?91000
VS-8ETH06PbF, VS-8ETH06FPPbF
1
10
TJ = 175 °C
T
J
= 150 °C
T
J
= 25 °C
0
1
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
23
4
0.1
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22
= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 25
I
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 40 -
T
J
TJ = 25 °C - 2.4 -
T
= 125 °C - 4.8 -
J
= 8 A
I
F
dI
/dt = 200 A/μs
F
V
= 390 V
R
TJ = 25 °C - 25 -
T
= 125 °C - 120 -
J
= 8 A
I
F
TJ = 125 °C
dI
/dt = 600 A/μs
F
V
= 390 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
(FULL-PAK) - 3.4 4.3
, T
T
J
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth
and greased
Case style TO-220AC 8ETH06
Case style TO-220 FULL-PAK 8ETH06FP
®
-25-
-33-ns
-12- A
-220- nC
- 65 - 175 °C
-1.42
-0.5-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94026
2 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0 200 400
100
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
300
VR - Reverse Voltage (V)
Reverse Voltage
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
600500
VS-8ETH06PbF, VS-8ETH06FPPbF
100
1000
0 200 400 500 600
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
10 100
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Hyperfast Rectifier, 8 A FRED Pt
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
®
Vishay Semiconductors
Fig. 4 - Maximum Thermal Impedance Z
Document Number: 94026 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
thJC
Characteristics (FULL-PAK)
thJC
Characteristics
www.vishay.com/doc?91000
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