Vishay VS-8ETH03PbF Data Sheet
VS-8ETH03PbF
TO-220AC
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
typ. See Recovery table
t
rr
T
max. 175 °C
J
Diode variation Single die
cathode
1
Cathode
300 V
1.25 V
Base
8 A
2
Anode
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
3
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Non-repetitive peak surge current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 155 °C 8
TC = 25 °C 100
Stg
300 V
A
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 μA 300 - -
R
IF = 8 A - 1.0 1.25
F
I
= 8 A, TJ = 125 °C - 0.83 1.00
F
VR = VR rated - 0.02 20
T
= 125 °C, VR = VR rated - 6.0 200
J
VR = 300 V - 31 - pF
T
Measured lead to lead 5 mm from package body - 8 - nH
S
V
μA
Document Number: 94024 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
www.vishay.com/doc?91000
VS-8ETH03PbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 40 -
J
TJ = 25 °C - 2.2 -
T
= 125 °C - 5.3 -
J
= 8 A
I
F
/dt = - 200 A/μs
dI
F
V
= 200 V
R
TJ = 25 °C - 30 -
T
= 125 °C - 106 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device Case style TO-220AC 8ETH03
T
, T
J
Stg
R
- 1.45 2.5
thJC
R
R
thJA
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth
and greased
®
-27-
- 65 - 175 °C
-0.2-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
nsT
A
nC
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94024
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Hyperfast Rectifier, 8 A FRED Pt
1
10
TJ = 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.4 1.81.0
0.8
1.4
VF - Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
0.6 1.2 1.6
2.0
0.01
0.1
1
10
100
0 100 200
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
150
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
50
0.001
1000
300250
100
1000
0 100 200 250 300
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
15050
TJ = 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
VS-8ETH03PbF
®
Vishay Semiconductors
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94024 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 28-Apr-11 DiodesAmericas@vishay.com
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
thJC
Characteristics
www.vishay.com/doc?91000
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