Vishay VS-8ETH03SPbF, VS-8ETH03-1PbF Data Sheet

V

VS-8ETH03SPbF, VS-8ETH03-1PbF

Vishay High Power Products

S-8ETH03SPbF

Base

cathode

2

1

N/C

D2PAK

3

Anode

PRODUCT SUMMARY

t

rr

I

F(AV)

V

R

Hyperfast Rectifier, 8 A FRED Pt

FEATURES

VS-8ETH03-1PbF

2

1

N/C

TO-262

3

Anode

35 ns

8 A

300 V

• Hyperfast recovery time

• Low forward voltage drop

• Low leakage current

• 175 °C operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

DESCRIPTION/APPLICATIONS

Vishay HPP’s 300 V series are the state of the art hyperfast
recovery rectifiers designed with optimized performance of
forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

®

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Repetitive peak reverse voltage V

Average rectified forward current I

Non-repetitive peak surge current I

Operating junction and storage temperatures T

F(AV)

FSM

, T

J

RRM

TC = 155 °C 8

TC = 25 °C 100

Stg

300 V

A

- 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 94025 For technical questions, contact: [e-mail]
Revision: 11-Mar-10 1

,

V

BR

V

R

IR = 100 μA 300 - -

R

IF = 8 A - 1.0 1.25

F

I

= 8 A, TJ = 125 °C - 0.83 1.00

F

VR = VR rated - 0.02 20

T

= 125 °C, VR = VR rated - 6.0 200

J

VR = 300 V - 31 - pF

T

Measured lead to lead 5 mm from package body - 8 - nH

S

V

μA

www.vishay.com

VS-8ETH03SPbF, VS-8ETH03-1PbF

Vishay High Power Products

Hyperfast Rectifier,

8 A FRED Pt

®

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V - - 35

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

= 125 °C - 40 -

T

J

TJ = 25 °C - 2.2 -

T

= 125 °C - 5.3 -

J

= 8 A

I

F

/dt = - 200 A/μs

dI

F

V

= 200 V

R

-27-

TJ = 25 °C - 30 -

T

= 125 °C - 106 -

J

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Thermal resistance,
junction to case per leg

Thermal resistance,
junction to ambient per leg

Thermal resistance,
case to heatsink

Weight

Mounting torque

Marking device

, T

T

J

Stg

R

-1.452.5

thJC

R

thJA

R

thCS

Typical socket mount - - 70

Mounting surface, flat, smooth and
greased

- 65 - 175 °C

-0.2-

-2.0- g

-0.07- oz.

Case style D

6.0

(5.0)

2

PAK 8ETH03S

-

Case style TO-262 8ETH03-1

12

(10)

kgf · cm

(lbf · in)

nsT

A

nC

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94025

2 Revision: 11-Mar-10

VS-8ETH03SPbF, VS-8ETH03-1PbF

100

10

- Instantaneous

F

I

Forward Current (A)

1

0.4 1.81.0

0.6 1.2 1.6

TJ = 175 °C

= 125 °C

T

J

= 25 °C

T

J

0.8

1.4

VF - Forward Voltage Drop (V)

Hyperfast Rectifier,

8 A FRED Pt

2.0

®

- Reverse Current (µA)

R

I

1000

100

10

0.1

0.01

0.001

Vishay High Power Products

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

1

50

0 100 200

VR - Reverse Voltage (V)

TJ = 100 °C

TJ = 25 °C

150

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

300250

100

TJ = 25 °C

- Junction Capacitance (pF)

T

C

10

0 100 200 250 300

15050

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.50

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

.

10

Document Number: 94025 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Mar-10 3